Diffusion of near surface defects during the thermal oxidation of silicon

Detalhes bibliográficos
Autor(a) principal: Ganem, Jean-Jacques
Data de Publicação: 1997
Outros Autores: Trimaille, Isabelle, Andre, P., Rigo, Serge, Stedile, Fernanda Chiarello, Baumvol, Israel Jacob Rabin
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/95369
Resumo: The diffusion of defects during the thermal growth of SiO2 film on Si (100) in dry O2 was investigated using sequential treatments in natural oxygen (16O2) and in heavy oxygen (18O2) in a Joule effect furnace. The 18O depth profiles were measured with a depth resolution better than 1 nm, using the nuclear reaction narrow resonance 18O(p,α)15N (ER=151 keV, R5100 eV). From these profiles, we confirmed that just below the surface an exchange between the oxygen atoms from the gas phase and those from the silica occurs, even for silica films thicker than 20 nm. This fact is not predicted by the Deal and Grove model. A diffusion of oxygen related defects takes place in the near surface region, with an apparent diffusion coefficient D*54.333x10 -19 cm²/s for an oxidation temperature of T=930 °C and for an oxygen pressure of P=100 mbar.
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spelling Ganem, Jean-JacquesTrimaille, IsabelleAndre, P.Rigo, SergeStedile, Fernanda ChiarelloBaumvol, Israel Jacob Rabin2014-05-17T02:07:08Z19970021-8979http://hdl.handle.net/10183/95369000194872The diffusion of defects during the thermal growth of SiO2 film on Si (100) in dry O2 was investigated using sequential treatments in natural oxygen (16O2) and in heavy oxygen (18O2) in a Joule effect furnace. The 18O depth profiles were measured with a depth resolution better than 1 nm, using the nuclear reaction narrow resonance 18O(p,α)15N (ER=151 keV, R5100 eV). From these profiles, we confirmed that just below the surface an exchange between the oxygen atoms from the gas phase and those from the silica occurs, even for silica films thicker than 20 nm. This fact is not predicted by the Deal and Grove model. A diffusion of oxygen related defects takes place in the near surface region, with an apparent diffusion coefficient D*54.333x10 -19 cm²/s for an oxidation temperature of T=930 °C and for an oxygen pressure of P=100 mbar.application/pdfengJournal of Applied Physics. Woodbury. Vol. 81, no. 12 (June 1997), p. 8109-8111Física da matéria condensadaDifusao : Superficies : OxidacaoSilícioDiffusion of near surface defects during the thermal oxidation of siliconEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000194872.pdf000194872.pdfTexto completo (inglês)application/pdf225585http://www.lume.ufrgs.br/bitstream/10183/95369/1/000194872.pdf7720c5d40a62e8de3a12cfae83d58e0eMD51TEXT000194872.pdf.txt000194872.pdf.txtExtracted Texttext/plain15166http://www.lume.ufrgs.br/bitstream/10183/95369/2/000194872.pdf.txt93a20b527cc4fe5f538812306faa6494MD52THUMBNAIL000194872.pdf.jpg000194872.pdf.jpgGenerated Thumbnailimage/jpeg1553http://www.lume.ufrgs.br/bitstream/10183/95369/3/000194872.pdf.jpg255de11aeb45e260718dd82147b37964MD5310183/953692022-02-22 04:45:31.78568oai:www.lume.ufrgs.br:10183/95369Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2022-02-22T07:45:31Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Diffusion of near surface defects during the thermal oxidation of silicon
title Diffusion of near surface defects during the thermal oxidation of silicon
spellingShingle Diffusion of near surface defects during the thermal oxidation of silicon
Ganem, Jean-Jacques
Física da matéria condensada
Difusao : Superficies : Oxidacao
Silício
title_short Diffusion of near surface defects during the thermal oxidation of silicon
title_full Diffusion of near surface defects during the thermal oxidation of silicon
title_fullStr Diffusion of near surface defects during the thermal oxidation of silicon
title_full_unstemmed Diffusion of near surface defects during the thermal oxidation of silicon
title_sort Diffusion of near surface defects during the thermal oxidation of silicon
author Ganem, Jean-Jacques
author_facet Ganem, Jean-Jacques
Trimaille, Isabelle
Andre, P.
Rigo, Serge
Stedile, Fernanda Chiarello
Baumvol, Israel Jacob Rabin
author_role author
author2 Trimaille, Isabelle
Andre, P.
Rigo, Serge
Stedile, Fernanda Chiarello
Baumvol, Israel Jacob Rabin
author2_role author
author
author
author
author
dc.contributor.author.fl_str_mv Ganem, Jean-Jacques
Trimaille, Isabelle
Andre, P.
Rigo, Serge
Stedile, Fernanda Chiarello
Baumvol, Israel Jacob Rabin
dc.subject.por.fl_str_mv Física da matéria condensada
Difusao : Superficies : Oxidacao
Silício
topic Física da matéria condensada
Difusao : Superficies : Oxidacao
Silício
description The diffusion of defects during the thermal growth of SiO2 film on Si (100) in dry O2 was investigated using sequential treatments in natural oxygen (16O2) and in heavy oxygen (18O2) in a Joule effect furnace. The 18O depth profiles were measured with a depth resolution better than 1 nm, using the nuclear reaction narrow resonance 18O(p,α)15N (ER=151 keV, R5100 eV). From these profiles, we confirmed that just below the surface an exchange between the oxygen atoms from the gas phase and those from the silica occurs, even for silica films thicker than 20 nm. This fact is not predicted by the Deal and Grove model. A diffusion of oxygen related defects takes place in the near surface region, with an apparent diffusion coefficient D*54.333x10 -19 cm²/s for an oxidation temperature of T=930 °C and for an oxygen pressure of P=100 mbar.
publishDate 1997
dc.date.issued.fl_str_mv 1997
dc.date.accessioned.fl_str_mv 2014-05-17T02:07:08Z
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dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/95369
dc.identifier.issn.pt_BR.fl_str_mv 0021-8979
dc.identifier.nrb.pt_BR.fl_str_mv 000194872
identifier_str_mv 0021-8979
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url http://hdl.handle.net/10183/95369
dc.language.iso.fl_str_mv eng
language eng
dc.relation.ispartof.pt_BR.fl_str_mv Journal of Applied Physics. Woodbury. Vol. 81, no. 12 (June 1997), p. 8109-8111
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