Electrical activation of boron coimplanted with carbon in a silicon substrate

Detalhes bibliográficos
Autor(a) principal: Souza, Joel Pereira de
Data de Publicação: 1993
Outros Autores: Boudinov, Henri Ivanov
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/95351
Resumo: It is demonstratedt hat the electrical activation in B+ (5.0X 1014 cm-² at 50 keV) implanted Si samples submitted to furnace annealing can be noticeably affected by a C+ coimplantation. It was found that a C+ dose ten times lower than that of B+ is not sufficient to influence the activation behavior of B. However, C+ implanted to a dose equal to or ten times higher than the B+ dose contributed, respectively, to the reduction or enhancement of the electrical activation of B after annealing in the temperature range of 450-700 °C. In addition, the reverse annealing of B is attenuated in the coimplanted samples and suppressed in samples where the C+ implantation damage was annealed prior to the B+ implantation. At temperatures > 700 °C the electrical activation is not significantly affected by the C+ coimplantation. A model considering interaction between C and Si self-interstitial atoms during thermal annealing is proposed to account for the activation behavior of B in the dually implanted samples.
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spelling Souza, Joel Pereira deBoudinov, Henri Ivanov2014-05-17T02:06:49Z19930021-8979http://hdl.handle.net/10183/95351000056945It is demonstratedt hat the electrical activation in B+ (5.0X 1014 cm-² at 50 keV) implanted Si samples submitted to furnace annealing can be noticeably affected by a C+ coimplantation. It was found that a C+ dose ten times lower than that of B+ is not sufficient to influence the activation behavior of B. However, C+ implanted to a dose equal to or ten times higher than the B+ dose contributed, respectively, to the reduction or enhancement of the electrical activation of B after annealing in the temperature range of 450-700 °C. In addition, the reverse annealing of B is attenuated in the coimplanted samples and suppressed in samples where the C+ implantation damage was annealed prior to the B+ implantation. At temperatures > 700 °C the electrical activation is not significantly affected by the C+ coimplantation. A model considering interaction between C and Si self-interstitial atoms during thermal annealing is proposed to account for the activation behavior of B in the dually implanted samples.application/pdfengJournal of Applied Physics. Woodbury. Vol. 74, n. 11 (Dec. 1993), p. 6599-6602Física da matéria condensadaCircuitos integradosImplantação de íonsSilícioDopagem de semicondutoresElectrical activation of boron coimplanted with carbon in a silicon substrateEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000056945.pdf000056945.pdfTexto completo (inglês)application/pdf604416http://www.lume.ufrgs.br/bitstream/10183/95351/1/000056945.pdf2d5ad9b5d26546db6dab0f37e65f1827MD51TEXT000056945.pdf.txt000056945.pdf.txtExtracted Texttext/plain18252http://www.lume.ufrgs.br/bitstream/10183/95351/2/000056945.pdf.txtee310e383e152e9b23214592b54dec87MD52THUMBNAIL000056945.pdf.jpg000056945.pdf.jpgGenerated Thumbnailimage/jpeg1585http://www.lume.ufrgs.br/bitstream/10183/95351/3/000056945.pdf.jpg714c9327562281f4e33e5a9f3ae63018MD5310183/953512022-02-22 05:02:49.587069oai:www.lume.ufrgs.br:10183/95351Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2022-02-22T08:02:49Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Electrical activation of boron coimplanted with carbon in a silicon substrate
title Electrical activation of boron coimplanted with carbon in a silicon substrate
spellingShingle Electrical activation of boron coimplanted with carbon in a silicon substrate
Souza, Joel Pereira de
Física da matéria condensada
Circuitos integrados
Implantação de íons
Silício
Dopagem de semicondutores
title_short Electrical activation of boron coimplanted with carbon in a silicon substrate
title_full Electrical activation of boron coimplanted with carbon in a silicon substrate
title_fullStr Electrical activation of boron coimplanted with carbon in a silicon substrate
title_full_unstemmed Electrical activation of boron coimplanted with carbon in a silicon substrate
title_sort Electrical activation of boron coimplanted with carbon in a silicon substrate
author Souza, Joel Pereira de
author_facet Souza, Joel Pereira de
Boudinov, Henri Ivanov
author_role author
author2 Boudinov, Henri Ivanov
author2_role author
dc.contributor.author.fl_str_mv Souza, Joel Pereira de
Boudinov, Henri Ivanov
dc.subject.por.fl_str_mv Física da matéria condensada
Circuitos integrados
Implantação de íons
Silício
Dopagem de semicondutores
topic Física da matéria condensada
Circuitos integrados
Implantação de íons
Silício
Dopagem de semicondutores
description It is demonstratedt hat the electrical activation in B+ (5.0X 1014 cm-² at 50 keV) implanted Si samples submitted to furnace annealing can be noticeably affected by a C+ coimplantation. It was found that a C+ dose ten times lower than that of B+ is not sufficient to influence the activation behavior of B. However, C+ implanted to a dose equal to or ten times higher than the B+ dose contributed, respectively, to the reduction or enhancement of the electrical activation of B after annealing in the temperature range of 450-700 °C. In addition, the reverse annealing of B is attenuated in the coimplanted samples and suppressed in samples where the C+ implantation damage was annealed prior to the B+ implantation. At temperatures > 700 °C the electrical activation is not significantly affected by the C+ coimplantation. A model considering interaction between C and Si self-interstitial atoms during thermal annealing is proposed to account for the activation behavior of B in the dually implanted samples.
publishDate 1993
dc.date.issued.fl_str_mv 1993
dc.date.accessioned.fl_str_mv 2014-05-17T02:06:49Z
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dc.language.iso.fl_str_mv eng
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dc.relation.ispartof.pt_BR.fl_str_mv Journal of Applied Physics. Woodbury. Vol. 74, n. 11 (Dec. 1993), p. 6599-6602
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