Análise de topologias para lâmpada bulbo led utilizando dispositivos semicondutores de nitreto de gálio operando em 1MHz

Detalhes bibliográficos
Autor(a) principal: Rosa, Veridiane Lopes
Data de Publicação: 2018
Tipo de documento: Dissertação
Idioma: por
Título da fonte: Manancial - Repositório Digital da UFSM
Texto Completo: http://repositorio.ufsm.br/handle/1/16026
Resumo: This paper presents the losses and efficiency evaluation to three different topologies. This paper goals are evaluating the losses percental related to the semiconductors devices, Gallium Nitride (GaN). This paper presents the converters: synchronous Buck, quasi-resonant Buck converter and LLC resonant converter. The topologies have their losses evaluated by calculation, simulation and experimental, therefore it is possible to compare the methods. Utilizing the calculation and simulation method is possible to predict the real converter behaviour, as result is possible to evaluate each device losses. In conclusion the Gallium Nitrite have some limitations to low load applications and hard switching operation. In the resonant applications the semiconductor devices, GaN, have their losses decreased.
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spelling 2019-04-01T14:17:27Z2019-04-01T14:17:27Z2018-08-31http://repositorio.ufsm.br/handle/1/16026This paper presents the losses and efficiency evaluation to three different topologies. This paper goals are evaluating the losses percental related to the semiconductors devices, Gallium Nitride (GaN). This paper presents the converters: synchronous Buck, quasi-resonant Buck converter and LLC resonant converter. The topologies have their losses evaluated by calculation, simulation and experimental, therefore it is possible to compare the methods. Utilizing the calculation and simulation method is possible to predict the real converter behaviour, as result is possible to evaluate each device losses. In conclusion the Gallium Nitrite have some limitations to low load applications and hard switching operation. In the resonant applications the semiconductor devices, GaN, have their losses decreased.O presente trabalho apresenta o estudo das perdas e da eficiência para três topologias de conversores. Tendo como objetivo avaliar a percentagem de perdas relativas ao semicondutor à base de Nitreto de Gálio (GaN). As topologias empregadas neste trabalho são Buck síncrono, Buck quase-ressonante e conversor ressonante LLC. Para cada uma das topologias são avaliadas as perdas por cálculo, por simulação e de modo experimental, de forma a realizar um comparativo entre os métodos. Com o uso dos métodos de cálculo e de simulação foi possível prever-se o comportamento real dos conversores, assim como avaliar as perdas em cada um dos componentes. Com este trabalho conclui-se que o GaN possui suas limitações em aplicações de baixa potência e em aplicações em comutação forçada. Em aplicações ressonantes as perdas relativas aos semicondutores GaN, são reduzidas significativamente.porUniversidade Federal de Santa MariaCentro de TecnologiaPrograma de Pós-Graduação em Engenharia ElétricaUFSMBrasilEngenharia ElétricaAttribution-NonCommercial-NoDerivatives 4.0 Internationalhttp://creativecommons.org/licenses/by-nc-nd/4.0/info:eu-repo/semantics/openAccessPerdasGaNConversores ressonantesLossesResonant convertersCNPQ::ENGENHARIAS::ENGENHARIA ELETRICAAnálise de topologias para lâmpada bulbo led utilizando dispositivos semicondutores de nitreto de gálio operando em 1MHzAnalysis of topologies for bulb led lamps using gallium nitride semiconductors operating in 1MHzinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/masterThesisPrado, Ricardo Nederson dohttp://lattes.cnpq.br/6324790827842684Cosetin, Marcelo Rafaelhttp://lattes.cnpq.br/4834011530700633Russi, Jumar Luíshttp://lattes.cnpq.br/8066639517474565http://lattes.cnpq.br/3410433007803963Rosa, Veridiane Lopes300400000007600a3e0e676-87b0-41f2-9e78-004e0012d7386516b200-08df-4069-8df0-503550844562b4be1fa2-5c39-4e08-a888-1cec4bef579f85af4721-6868-481d-816b-3bd209108cdcreponame:Manancial - Repositório Digital da UFSMinstname:Universidade Federal de Santa Maria (UFSM)instacron:UFSMORIGINALDIS_PPGEE_2018_ROSA_VERIDIANE.pdfDIS_PPGEE_2018_ROSA_VERIDIANE.pdfDissertação de Mestradoapplication/pdf5822086http://repositorio.ufsm.br/bitstream/1/16026/1/DIS_PPGEE_2018_ROSA_VERIDIANE.pdfcd330bc27ff96a1acb836c24411fe4f3MD51CC-LICENSElicense_rdflicense_rdfapplication/rdf+xml; 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dc.title.por.fl_str_mv Análise de topologias para lâmpada bulbo led utilizando dispositivos semicondutores de nitreto de gálio operando em 1MHz
dc.title.alternative.eng.fl_str_mv Analysis of topologies for bulb led lamps using gallium nitride semiconductors operating in 1MHz
title Análise de topologias para lâmpada bulbo led utilizando dispositivos semicondutores de nitreto de gálio operando em 1MHz
spellingShingle Análise de topologias para lâmpada bulbo led utilizando dispositivos semicondutores de nitreto de gálio operando em 1MHz
Rosa, Veridiane Lopes
Perdas
GaN
Conversores ressonantes
Losses
Resonant converters
CNPQ::ENGENHARIAS::ENGENHARIA ELETRICA
title_short Análise de topologias para lâmpada bulbo led utilizando dispositivos semicondutores de nitreto de gálio operando em 1MHz
title_full Análise de topologias para lâmpada bulbo led utilizando dispositivos semicondutores de nitreto de gálio operando em 1MHz
title_fullStr Análise de topologias para lâmpada bulbo led utilizando dispositivos semicondutores de nitreto de gálio operando em 1MHz
title_full_unstemmed Análise de topologias para lâmpada bulbo led utilizando dispositivos semicondutores de nitreto de gálio operando em 1MHz
title_sort Análise de topologias para lâmpada bulbo led utilizando dispositivos semicondutores de nitreto de gálio operando em 1MHz
author Rosa, Veridiane Lopes
author_facet Rosa, Veridiane Lopes
author_role author
dc.contributor.advisor1.fl_str_mv Prado, Ricardo Nederson do
dc.contributor.advisor1Lattes.fl_str_mv http://lattes.cnpq.br/6324790827842684
dc.contributor.referee1.fl_str_mv Cosetin, Marcelo Rafael
dc.contributor.referee1Lattes.fl_str_mv http://lattes.cnpq.br/4834011530700633
dc.contributor.referee2.fl_str_mv Russi, Jumar Luís
dc.contributor.referee2Lattes.fl_str_mv http://lattes.cnpq.br/8066639517474565
dc.contributor.authorLattes.fl_str_mv http://lattes.cnpq.br/3410433007803963
dc.contributor.author.fl_str_mv Rosa, Veridiane Lopes
contributor_str_mv Prado, Ricardo Nederson do
Cosetin, Marcelo Rafael
Russi, Jumar Luís
dc.subject.por.fl_str_mv Perdas
GaN
Conversores ressonantes
topic Perdas
GaN
Conversores ressonantes
Losses
Resonant converters
CNPQ::ENGENHARIAS::ENGENHARIA ELETRICA
dc.subject.eng.fl_str_mv Losses
Resonant converters
dc.subject.cnpq.fl_str_mv CNPQ::ENGENHARIAS::ENGENHARIA ELETRICA
description This paper presents the losses and efficiency evaluation to three different topologies. This paper goals are evaluating the losses percental related to the semiconductors devices, Gallium Nitride (GaN). This paper presents the converters: synchronous Buck, quasi-resonant Buck converter and LLC resonant converter. The topologies have their losses evaluated by calculation, simulation and experimental, therefore it is possible to compare the methods. Utilizing the calculation and simulation method is possible to predict the real converter behaviour, as result is possible to evaluate each device losses. In conclusion the Gallium Nitrite have some limitations to low load applications and hard switching operation. In the resonant applications the semiconductor devices, GaN, have their losses decreased.
publishDate 2018
dc.date.issued.fl_str_mv 2018-08-31
dc.date.accessioned.fl_str_mv 2019-04-01T14:17:27Z
dc.date.available.fl_str_mv 2019-04-01T14:17:27Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/masterThesis
format masterThesis
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://repositorio.ufsm.br/handle/1/16026
url http://repositorio.ufsm.br/handle/1/16026
dc.language.iso.fl_str_mv por
language por
dc.relation.cnpq.fl_str_mv 300400000007
dc.relation.confidence.fl_str_mv 600
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dc.rights.driver.fl_str_mv Attribution-NonCommercial-NoDerivatives 4.0 International
http://creativecommons.org/licenses/by-nc-nd/4.0/
info:eu-repo/semantics/openAccess
rights_invalid_str_mv Attribution-NonCommercial-NoDerivatives 4.0 International
http://creativecommons.org/licenses/by-nc-nd/4.0/
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv Universidade Federal de Santa Maria
Centro de Tecnologia
dc.publisher.program.fl_str_mv Programa de Pós-Graduação em Engenharia Elétrica
dc.publisher.initials.fl_str_mv UFSM
dc.publisher.country.fl_str_mv Brasil
dc.publisher.department.fl_str_mv Engenharia Elétrica
publisher.none.fl_str_mv Universidade Federal de Santa Maria
Centro de Tecnologia
dc.source.none.fl_str_mv reponame:Manancial - Repositório Digital da UFSM
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instname_str Universidade Federal de Santa Maria (UFSM)
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institution UFSM
reponame_str Manancial - Repositório Digital da UFSM
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