Characterization of SiC Thin Films Deposited by HiPIMS

Detalhes bibliográficos
Autor(a) principal: Leal, Gabriela
Data de Publicação: 2014
Outros Autores: Campos, Tiago Moreira Bastos, Silva Sobrinho, Argemiro Soares da, Pessoa, Rodrigo Savio, Maciel, Homero Santiago, Massi, Marcos [UNIFESP]
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UNIFESP
Texto Completo: http://dx.doi.org/10.1590/S1516-14392014005000038
http://repositorio.unifesp.br/handle/11600/37469
Resumo: In this work thin films of silicon carbide (SiC) were deposited on silicon wafers by High Power Impulse Magnetron Sputtering (HiPIMS) technique varying the average power of the discharge on a stoichiometric SiC target. X-ray diffraction, Raman spectroscopy, scanning electron microscopy and profilometry were used to analyze the films. It was observed that high values of the average electric power favors the formation of C-C bonds, while low values of the power promote the formation of Si-C bonds. At high power, we have also observed higher deposition rates, but the samples present surface imperfections, causing increase in the roughness and decrease in the film uniformity.
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spelling Characterization of SiC Thin Films Deposited by HiPIMSHiPIMSthin filmsilicon carbideIn this work thin films of silicon carbide (SiC) were deposited on silicon wafers by High Power Impulse Magnetron Sputtering (HiPIMS) technique varying the average power of the discharge on a stoichiometric SiC target. X-ray diffraction, Raman spectroscopy, scanning electron microscopy and profilometry were used to analyze the films. It was observed that high values of the average electric power favors the formation of C-C bonds, while low values of the power promote the formation of Si-C bonds. At high power, we have also observed higher deposition rates, but the samples present surface imperfections, causing increase in the roughness and decrease in the film uniformity.Inst Tecnol Aeronaut ITA, Ctr Tecn Aeroespacial CTA, BR-12228900 Sao Jose Dos Campos, SP, BrazilUniv Vale Paraiba, UNIVAP, BR-12244390 Sao Jose Dos Campos, SP, BrazilUniversidade Federal de São Paulo, UNIFESP, BR-12231280 Sao Jose Dos Campos, SP, BrazilUniversidade Federal de São Paulo, UNIFESP, ICT, BR-12231280 Sao Jose Dos Campos, SP, BrazilWeb of ScienceConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Univ Fed Sao Carlos, Dept Engenharia MaterialsInst Tecnol Aeronaut ITAUniv Vale ParaibaUniversidade Federal de São Paulo (UNIFESP)Leal, GabrielaCampos, Tiago Moreira BastosSilva Sobrinho, Argemiro Soares daPessoa, Rodrigo SavioMaciel, Homero SantiagoMassi, Marcos [UNIFESP]2016-01-24T14:35:21Z2016-01-24T14:35:21Z2014-03-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersion472-476http://dx.doi.org/10.1590/S1516-14392014005000038Materials Research-ibero-american Journal of Materials. Sao Carlos: Univ Fed Sao Carlos, Dept Engenharia Materials, v. 17, n. 2, p. 472-476, 2014.10.1590/S1516-143920140050000381516-1439S1516-14392014005000038http://repositorio.unifesp.br/handle/11600/37469WOS:000336255900027engMaterials Research-ibero-american Journal of Materialsinfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UNIFESPinstname:Universidade Federal de São Paulo (UNIFESP)instacron:UNIFESP2022-11-04T15:45:37Zoai:repositorio.unifesp.br/:11600/37469Repositório InstitucionalPUBhttp://www.repositorio.unifesp.br/oai/requestbiblioteca.csp@unifesp.bropendoar:34652022-11-04T15:45:37Repositório Institucional da UNIFESP - Universidade Federal de São Paulo (UNIFESP)false
dc.title.none.fl_str_mv Characterization of SiC Thin Films Deposited by HiPIMS
title Characterization of SiC Thin Films Deposited by HiPIMS
spellingShingle Characterization of SiC Thin Films Deposited by HiPIMS
Leal, Gabriela
HiPIMS
thin film
silicon carbide
title_short Characterization of SiC Thin Films Deposited by HiPIMS
title_full Characterization of SiC Thin Films Deposited by HiPIMS
title_fullStr Characterization of SiC Thin Films Deposited by HiPIMS
title_full_unstemmed Characterization of SiC Thin Films Deposited by HiPIMS
title_sort Characterization of SiC Thin Films Deposited by HiPIMS
author Leal, Gabriela
author_facet Leal, Gabriela
Campos, Tiago Moreira Bastos
Silva Sobrinho, Argemiro Soares da
Pessoa, Rodrigo Savio
Maciel, Homero Santiago
Massi, Marcos [UNIFESP]
author_role author
author2 Campos, Tiago Moreira Bastos
Silva Sobrinho, Argemiro Soares da
Pessoa, Rodrigo Savio
Maciel, Homero Santiago
Massi, Marcos [UNIFESP]
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv Inst Tecnol Aeronaut ITA
Univ Vale Paraiba
Universidade Federal de São Paulo (UNIFESP)
dc.contributor.author.fl_str_mv Leal, Gabriela
Campos, Tiago Moreira Bastos
Silva Sobrinho, Argemiro Soares da
Pessoa, Rodrigo Savio
Maciel, Homero Santiago
Massi, Marcos [UNIFESP]
dc.subject.por.fl_str_mv HiPIMS
thin film
silicon carbide
topic HiPIMS
thin film
silicon carbide
description In this work thin films of silicon carbide (SiC) were deposited on silicon wafers by High Power Impulse Magnetron Sputtering (HiPIMS) technique varying the average power of the discharge on a stoichiometric SiC target. X-ray diffraction, Raman spectroscopy, scanning electron microscopy and profilometry were used to analyze the films. It was observed that high values of the average electric power favors the formation of C-C bonds, while low values of the power promote the formation of Si-C bonds. At high power, we have also observed higher deposition rates, but the samples present surface imperfections, causing increase in the roughness and decrease in the film uniformity.
publishDate 2014
dc.date.none.fl_str_mv 2014-03-01
2016-01-24T14:35:21Z
2016-01-24T14:35:21Z
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1590/S1516-14392014005000038
Materials Research-ibero-american Journal of Materials. Sao Carlos: Univ Fed Sao Carlos, Dept Engenharia Materials, v. 17, n. 2, p. 472-476, 2014.
10.1590/S1516-14392014005000038
1516-1439
S1516-14392014005000038
http://repositorio.unifesp.br/handle/11600/37469
WOS:000336255900027
url http://dx.doi.org/10.1590/S1516-14392014005000038
http://repositorio.unifesp.br/handle/11600/37469
identifier_str_mv Materials Research-ibero-american Journal of Materials. Sao Carlos: Univ Fed Sao Carlos, Dept Engenharia Materials, v. 17, n. 2, p. 472-476, 2014.
10.1590/S1516-14392014005000038
1516-1439
S1516-14392014005000038
WOS:000336255900027
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Materials Research-ibero-american Journal of Materials
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 472-476
dc.publisher.none.fl_str_mv Univ Fed Sao Carlos, Dept Engenharia Materials
publisher.none.fl_str_mv Univ Fed Sao Carlos, Dept Engenharia Materials
dc.source.none.fl_str_mv reponame:Repositório Institucional da UNIFESP
instname:Universidade Federal de São Paulo (UNIFESP)
instacron:UNIFESP
instname_str Universidade Federal de São Paulo (UNIFESP)
instacron_str UNIFESP
institution UNIFESP
reponame_str Repositório Institucional da UNIFESP
collection Repositório Institucional da UNIFESP
repository.name.fl_str_mv Repositório Institucional da UNIFESP - Universidade Federal de São Paulo (UNIFESP)
repository.mail.fl_str_mv biblioteca.csp@unifesp.br
_version_ 1814268325793890304

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