A logarithmic CMOS image sensor with wide output voltage swing range
Autor(a) principal: | |
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Data de Publicação: | 2017 |
Outros Autores: | , , |
Tipo de documento: | Conjunto de dados |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP (dados de pesquisa) |
Texto Completo: | http://dx.doi.org/10.1109/ICCDCS.2017.7959722 http://hdl.handle.net/11449/179050 |
Resumo: | This paper presents logarithmic CMOS image sensor with wide output voltage swing range. Wide output voltage swing range is achieved by increasing the number of transistors connected as diodes of logarithmic CMOS image sensor. A prototype has been fabricated in 0.35μm AMS opto process. Four different pixels were fabricated using 20μmx20μm Nwel/Psub photodiodes with one, two, three and four transistors in series. The sensitivity measured were 136mV/Dec, 191mV/Dec, 281mV/Dec and 425mV/Dec for the pixels using one, two, three and four transistors in series respectively. This results shows that the sensitivity is increased by N approximately, were N is the number of transistors in series at pixels. Considering that the supply voltage the four-transistor pixel presents total output voltage swing range of 2.65V over a range of 120dB being the supply voltage 3.3V. |
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Repositório Institucional da UNESP (dados de pesquisa) |
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A logarithmic CMOS image sensor with wide output voltage swing rangeCMOShigh sensitivitylogarithmic pixelphotodetectorThis paper presents logarithmic CMOS image sensor with wide output voltage swing range. Wide output voltage swing range is achieved by increasing the number of transistors connected as diodes of logarithmic CMOS image sensor. A prototype has been fabricated in 0.35μm AMS opto process. Four different pixels were fabricated using 20μmx20μm Nwel/Psub photodiodes with one, two, three and four transistors in series. The sensitivity measured were 136mV/Dec, 191mV/Dec, 281mV/Dec and 425mV/Dec for the pixels using one, two, three and four transistors in series respectively. This results shows that the sensitivity is increased by N approximately, were N is the number of transistors in series at pixels. Considering that the supply voltage the four-transistor pixel presents total output voltage swing range of 2.65V over a range of 120dB being the supply voltage 3.3V.São Paulo State Unversity - UNESP, Av. Eng. Luiz E. C. Coube 14-01Federal Institute of São Paulo - IFSP, 50 Marina CristinaUniversity of Campinas - FEEC/UNICAMP, Av. Albert Einstein 400São Paulo State Unversity - UNESP, Av. Eng. Luiz E. C. Coube 14-01Universidade Estadual Paulista (Unesp)Federal Institute of São Paulo - IFSPUniversidade Estadual de Campinas (UNICAMP)De Souza Campos, Fernando [UNESP]Da Silva, Marcelo MacchiBordon, Mario Eduardo [UNESP]Swart, Jacobus W.2018-12-11T17:33:18Z2018-12-11T17:33:18Z2017-06-27Trabalho apresentado em eventoinfo:eu-repo/semantics/datasetinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/dataset69-72http://dx.doi.org/10.1109/ICCDCS.2017.79597222017 International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2017, p. 69-72.http://hdl.handle.net/11449/17905010.1109/ICCDCS.2017.79597222-s2.0-850258210165589838844298232Scopusreponame:Repositório Institucional da UNESP (dados de pesquisa)instname:Universidade Estadual Paulista (UNESP)instacron:UNSPeng2017 International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2017info:eu-repo/semantics/openAccess2024-06-28T13:34:35Zoai:repositorio.unesp.br:11449/179050Repositório de Dados de PesquisaPUBhttp://repositorio.unesp.br/oai/requestrepositoriounesp@unesp.bropendoar:2024-06-28T13:34:35Repositório Institucional da UNESP (dados de pesquisa) - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
A logarithmic CMOS image sensor with wide output voltage swing range |
title |
A logarithmic CMOS image sensor with wide output voltage swing range |
spellingShingle |
A logarithmic CMOS image sensor with wide output voltage swing range De Souza Campos, Fernando [UNESP] CMOS high sensitivity logarithmic pixel photodetector |
title_short |
A logarithmic CMOS image sensor with wide output voltage swing range |
title_full |
A logarithmic CMOS image sensor with wide output voltage swing range |
title_fullStr |
A logarithmic CMOS image sensor with wide output voltage swing range |
title_full_unstemmed |
A logarithmic CMOS image sensor with wide output voltage swing range |
title_sort |
A logarithmic CMOS image sensor with wide output voltage swing range |
author |
De Souza Campos, Fernando [UNESP] |
author_facet |
De Souza Campos, Fernando [UNESP] Da Silva, Marcelo Macchi Bordon, Mario Eduardo [UNESP] Swart, Jacobus W. |
author_role |
author |
author2 |
Da Silva, Marcelo Macchi Bordon, Mario Eduardo [UNESP] Swart, Jacobus W. |
author2_role |
author author author |
dc.contributor.none.fl_str_mv |
Universidade Estadual Paulista (Unesp) Federal Institute of São Paulo - IFSP Universidade Estadual de Campinas (UNICAMP) |
dc.contributor.author.fl_str_mv |
De Souza Campos, Fernando [UNESP] Da Silva, Marcelo Macchi Bordon, Mario Eduardo [UNESP] Swart, Jacobus W. |
dc.subject.por.fl_str_mv |
CMOS high sensitivity logarithmic pixel photodetector |
topic |
CMOS high sensitivity logarithmic pixel photodetector |
description |
This paper presents logarithmic CMOS image sensor with wide output voltage swing range. Wide output voltage swing range is achieved by increasing the number of transistors connected as diodes of logarithmic CMOS image sensor. A prototype has been fabricated in 0.35μm AMS opto process. Four different pixels were fabricated using 20μmx20μm Nwel/Psub photodiodes with one, two, three and four transistors in series. The sensitivity measured were 136mV/Dec, 191mV/Dec, 281mV/Dec and 425mV/Dec for the pixels using one, two, three and four transistors in series respectively. This results shows that the sensitivity is increased by N approximately, were N is the number of transistors in series at pixels. Considering that the supply voltage the four-transistor pixel presents total output voltage swing range of 2.65V over a range of 120dB being the supply voltage 3.3V. |
publishDate |
2017 |
dc.date.none.fl_str_mv |
2017-06-27 2018-12-11T17:33:18Z 2018-12-11T17:33:18Z |
dc.type.driver.fl_str_mv |
Trabalho apresentado em evento info:eu-repo/semantics/dataset info:eu-repo/semantics/publishedVersion |
dc.type.driver.none.fl_str_mv |
info:eu-repo/semantics/dataset |
format |
dataset |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1109/ICCDCS.2017.7959722 2017 International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2017, p. 69-72. http://hdl.handle.net/11449/179050 10.1109/ICCDCS.2017.7959722 2-s2.0-85025821016 5589838844298232 |
url |
http://dx.doi.org/10.1109/ICCDCS.2017.7959722 http://hdl.handle.net/11449/179050 |
identifier_str_mv |
2017 International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2017, p. 69-72. 10.1109/ICCDCS.2017.7959722 2-s2.0-85025821016 5589838844298232 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
2017 International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2017 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
69-72 |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP (dados de pesquisa) instname:Universidade Estadual Paulista (UNESP) instacron:UNSP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNSP |
institution |
UNSP |
reponame_str |
Repositório Institucional da UNESP (dados de pesquisa) |
collection |
Repositório Institucional da UNESP (dados de pesquisa) |
repository.name.fl_str_mv |
Repositório Institucional da UNESP (dados de pesquisa) - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
repositoriounesp@unesp.br |
_version_ |
1827770539356192768 |