A logarithmic CMOS image sensor with wide output voltage swing range

Detalhes bibliográficos
Autor(a) principal: De Souza Campos, Fernando [UNESP]
Data de Publicação: 2017
Outros Autores: Da Silva, Marcelo Macchi, Bordon, Mario Eduardo [UNESP], Swart, Jacobus W.
Tipo de documento: Artigo de conferência
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1109/ICCDCS.2017.7959722
http://hdl.handle.net/11449/179050
Resumo: This paper presents logarithmic CMOS image sensor with wide output voltage swing range. Wide output voltage swing range is achieved by increasing the number of transistors connected as diodes of logarithmic CMOS image sensor. A prototype has been fabricated in 0.35μm AMS opto process. Four different pixels were fabricated using 20μmx20μm Nwel/Psub photodiodes with one, two, three and four transistors in series. The sensitivity measured were 136mV/Dec, 191mV/Dec, 281mV/Dec and 425mV/Dec for the pixels using one, two, three and four transistors in series respectively. This results shows that the sensitivity is increased by N approximately, were N is the number of transistors in series at pixels. Considering that the supply voltage the four-transistor pixel presents total output voltage swing range of 2.65V over a range of 120dB being the supply voltage 3.3V.
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spelling A logarithmic CMOS image sensor with wide output voltage swing rangeCMOShigh sensitivitylogarithmic pixelphotodetectorThis paper presents logarithmic CMOS image sensor with wide output voltage swing range. Wide output voltage swing range is achieved by increasing the number of transistors connected as diodes of logarithmic CMOS image sensor. A prototype has been fabricated in 0.35μm AMS opto process. Four different pixels were fabricated using 20μmx20μm Nwel/Psub photodiodes with one, two, three and four transistors in series. The sensitivity measured were 136mV/Dec, 191mV/Dec, 281mV/Dec and 425mV/Dec for the pixels using one, two, three and four transistors in series respectively. This results shows that the sensitivity is increased by N approximately, were N is the number of transistors in series at pixels. Considering that the supply voltage the four-transistor pixel presents total output voltage swing range of 2.65V over a range of 120dB being the supply voltage 3.3V.São Paulo State Unversity - UNESP, Av. Eng. Luiz E. C. Coube 14-01Federal Institute of São Paulo - IFSP, 50 Marina CristinaUniversity of Campinas - FEEC/UNICAMP, Av. Albert Einstein 400São Paulo State Unversity - UNESP, Av. Eng. Luiz E. C. Coube 14-01Universidade Estadual Paulista (Unesp)Federal Institute of São Paulo - IFSPUniversidade Estadual de Campinas (UNICAMP)De Souza Campos, Fernando [UNESP]Da Silva, Marcelo MacchiBordon, Mario Eduardo [UNESP]Swart, Jacobus W.2018-12-11T17:33:18Z2018-12-11T17:33:18Z2017-06-27info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject69-72http://dx.doi.org/10.1109/ICCDCS.2017.79597222017 International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2017, p. 69-72.http://hdl.handle.net/11449/17905010.1109/ICCDCS.2017.79597222-s2.0-850258210165589838844298232Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPeng2017 International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2017info:eu-repo/semantics/openAccess2024-06-28T13:34:35Zoai:repositorio.unesp.br:11449/179050Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestrepositoriounesp@unesp.bropendoar:29462024-06-28T13:34:35Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv A logarithmic CMOS image sensor with wide output voltage swing range
title A logarithmic CMOS image sensor with wide output voltage swing range
spellingShingle A logarithmic CMOS image sensor with wide output voltage swing range
De Souza Campos, Fernando [UNESP]
CMOS
high sensitivity
logarithmic pixel
photodetector
title_short A logarithmic CMOS image sensor with wide output voltage swing range
title_full A logarithmic CMOS image sensor with wide output voltage swing range
title_fullStr A logarithmic CMOS image sensor with wide output voltage swing range
title_full_unstemmed A logarithmic CMOS image sensor with wide output voltage swing range
title_sort A logarithmic CMOS image sensor with wide output voltage swing range
author De Souza Campos, Fernando [UNESP]
author_facet De Souza Campos, Fernando [UNESP]
Da Silva, Marcelo Macchi
Bordon, Mario Eduardo [UNESP]
Swart, Jacobus W.
author_role author
author2 Da Silva, Marcelo Macchi
Bordon, Mario Eduardo [UNESP]
Swart, Jacobus W.
author2_role author
author
author
dc.contributor.none.fl_str_mv Universidade Estadual Paulista (Unesp)
Federal Institute of São Paulo - IFSP
Universidade Estadual de Campinas (UNICAMP)
dc.contributor.author.fl_str_mv De Souza Campos, Fernando [UNESP]
Da Silva, Marcelo Macchi
Bordon, Mario Eduardo [UNESP]
Swart, Jacobus W.
dc.subject.por.fl_str_mv CMOS
high sensitivity
logarithmic pixel
photodetector
topic CMOS
high sensitivity
logarithmic pixel
photodetector
description This paper presents logarithmic CMOS image sensor with wide output voltage swing range. Wide output voltage swing range is achieved by increasing the number of transistors connected as diodes of logarithmic CMOS image sensor. A prototype has been fabricated in 0.35μm AMS opto process. Four different pixels were fabricated using 20μmx20μm Nwel/Psub photodiodes with one, two, three and four transistors in series. The sensitivity measured were 136mV/Dec, 191mV/Dec, 281mV/Dec and 425mV/Dec for the pixels using one, two, three and four transistors in series respectively. This results shows that the sensitivity is increased by N approximately, were N is the number of transistors in series at pixels. Considering that the supply voltage the four-transistor pixel presents total output voltage swing range of 2.65V over a range of 120dB being the supply voltage 3.3V.
publishDate 2017
dc.date.none.fl_str_mv 2017-06-27
2018-12-11T17:33:18Z
2018-12-11T17:33:18Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1109/ICCDCS.2017.7959722
2017 International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2017, p. 69-72.
http://hdl.handle.net/11449/179050
10.1109/ICCDCS.2017.7959722
2-s2.0-85025821016
5589838844298232
url http://dx.doi.org/10.1109/ICCDCS.2017.7959722
http://hdl.handle.net/11449/179050
identifier_str_mv 2017 International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2017, p. 69-72.
10.1109/ICCDCS.2017.7959722
2-s2.0-85025821016
5589838844298232
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 2017 International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2017
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 69-72
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv repositoriounesp@unesp.br
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