A logarithmic CMOS image sensor with wide output voltage swing range
Autor(a) principal: | |
---|---|
Data de Publicação: | 2017 |
Outros Autores: | , , , |
Tipo de documento: | Artigo de conferência |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://hdl.handle.net/11449/165663 |
Resumo: | This paper presents logarithmic CMOS image sensor with wide output voltage swing range. Wide output voltage swing range is achieved by increasing the number of transistors connected as diodes of logarithmic CMOS image sensor. A prototype has been fabricated in 0.35 mu m AMS opto process. Four different pixels were fabricated using 20 mu mx20 mu m Nwel/Psub photodiodes with one, two, three and four transistors in series. The sensitivity measured were 136mV/Dec, 191mV/Dec, 281mV/Dec and 425mV/Dec for the pixels using one, two, three and four transistors in series respectively. This results shows that the sensitivity is increased by N approximately, were N is the number of transistors in series at pixels. Considering that the supply voltage the four- transistor pixel presents total output voltage swing range of 2.65V over a range of 120dB being the supply voltage 3.3V. |
id |
UNSP_d3c3f8aa7b9277bae41303837b17738b |
---|---|
oai_identifier_str |
oai:repositorio.unesp.br:11449/165663 |
network_acronym_str |
UNSP |
network_name_str |
Repositório Institucional da UNESP |
repository_id_str |
2946 |
spelling |
A logarithmic CMOS image sensor with wide output voltage swing rangeCMOShigh sensitivitylogarithmic pixelphotodetectorThis paper presents logarithmic CMOS image sensor with wide output voltage swing range. Wide output voltage swing range is achieved by increasing the number of transistors connected as diodes of logarithmic CMOS image sensor. A prototype has been fabricated in 0.35 mu m AMS opto process. Four different pixels were fabricated using 20 mu mx20 mu m Nwel/Psub photodiodes with one, two, three and four transistors in series. The sensitivity measured were 136mV/Dec, 191mV/Dec, 281mV/Dec and 425mV/Dec for the pixels using one, two, three and four transistors in series respectively. This results shows that the sensitivity is increased by N approximately, were N is the number of transistors in series at pixels. Considering that the supply voltage the four- transistor pixel presents total output voltage swing range of 2.65V over a range of 120dB being the supply voltage 3.3V.Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Sao Paulo State Unvers UNESP, Ave Engn LuizE C Coube 14-01, BR-17033360 Bauru, SP, BrazilIFSP, 50 Marina Cristina, BR-13083852 Cubatao, SP, BrazilUniv Campinas FEEC UNICAMP, Ave Albert Einstein 400, BR-13083852 Campinas, SP, BrazilSao Paulo State Unvers UNESP, Ave Engn LuizE C Coube 14-01, BR-17033360 Bauru, SP, BrazilIeeeUniversidade Estadual Paulista (Unesp)IFSPUniversidade Estadual de Campinas (UNICAMP)Campos, Fernando de Souza [UNESP]Silva, Marcelo Macchi daBordon, Mario Eduardo [UNESP]Swart, Jacobus W.Murphy, R. S.2018-11-28T15:26:09Z2018-11-28T15:26:09Z2017-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject69-722017 International Caribbean Conference On Devices, Circuits And Systems (iccdcs). New York: Ieee, p. 69-72, 2017.2165-3542http://hdl.handle.net/11449/165663WOS:0004051862000145589838844298232Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPeng2017 International Caribbean Conference On Devices, Circuits And Systems (iccdcs)info:eu-repo/semantics/openAccess2024-06-28T13:34:35Zoai:repositorio.unesp.br:11449/165663Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestrepositoriounesp@unesp.bropendoar:29462024-06-28T13:34:35Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
A logarithmic CMOS image sensor with wide output voltage swing range |
title |
A logarithmic CMOS image sensor with wide output voltage swing range |
spellingShingle |
A logarithmic CMOS image sensor with wide output voltage swing range Campos, Fernando de Souza [UNESP] CMOS high sensitivity logarithmic pixel photodetector |
title_short |
A logarithmic CMOS image sensor with wide output voltage swing range |
title_full |
A logarithmic CMOS image sensor with wide output voltage swing range |
title_fullStr |
A logarithmic CMOS image sensor with wide output voltage swing range |
title_full_unstemmed |
A logarithmic CMOS image sensor with wide output voltage swing range |
title_sort |
A logarithmic CMOS image sensor with wide output voltage swing range |
author |
Campos, Fernando de Souza [UNESP] |
author_facet |
Campos, Fernando de Souza [UNESP] Silva, Marcelo Macchi da Bordon, Mario Eduardo [UNESP] Swart, Jacobus W. Murphy, R. S. |
author_role |
author |
author2 |
Silva, Marcelo Macchi da Bordon, Mario Eduardo [UNESP] Swart, Jacobus W. Murphy, R. S. |
author2_role |
author author author author |
dc.contributor.none.fl_str_mv |
Universidade Estadual Paulista (Unesp) IFSP Universidade Estadual de Campinas (UNICAMP) |
dc.contributor.author.fl_str_mv |
Campos, Fernando de Souza [UNESP] Silva, Marcelo Macchi da Bordon, Mario Eduardo [UNESP] Swart, Jacobus W. Murphy, R. S. |
dc.subject.por.fl_str_mv |
CMOS high sensitivity logarithmic pixel photodetector |
topic |
CMOS high sensitivity logarithmic pixel photodetector |
description |
This paper presents logarithmic CMOS image sensor with wide output voltage swing range. Wide output voltage swing range is achieved by increasing the number of transistors connected as diodes of logarithmic CMOS image sensor. A prototype has been fabricated in 0.35 mu m AMS opto process. Four different pixels were fabricated using 20 mu mx20 mu m Nwel/Psub photodiodes with one, two, three and four transistors in series. The sensitivity measured were 136mV/Dec, 191mV/Dec, 281mV/Dec and 425mV/Dec for the pixels using one, two, three and four transistors in series respectively. This results shows that the sensitivity is increased by N approximately, were N is the number of transistors in series at pixels. Considering that the supply voltage the four- transistor pixel presents total output voltage swing range of 2.65V over a range of 120dB being the supply voltage 3.3V. |
publishDate |
2017 |
dc.date.none.fl_str_mv |
2017-01-01 2018-11-28T15:26:09Z 2018-11-28T15:26:09Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/conferenceObject |
format |
conferenceObject |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
2017 International Caribbean Conference On Devices, Circuits And Systems (iccdcs). New York: Ieee, p. 69-72, 2017. 2165-3542 http://hdl.handle.net/11449/165663 WOS:000405186200014 5589838844298232 |
identifier_str_mv |
2017 International Caribbean Conference On Devices, Circuits And Systems (iccdcs). New York: Ieee, p. 69-72, 2017. 2165-3542 WOS:000405186200014 5589838844298232 |
url |
http://hdl.handle.net/11449/165663 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
2017 International Caribbean Conference On Devices, Circuits And Systems (iccdcs) |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
69-72 |
dc.publisher.none.fl_str_mv |
Ieee |
publisher.none.fl_str_mv |
Ieee |
dc.source.none.fl_str_mv |
Web of Science reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
repositoriounesp@unesp.br |
_version_ |
1826303666794004480 |