A logarithmic CMOS image sensor with wide output voltage swing range

Detalhes bibliográficos
Autor(a) principal: Campos, Fernando de Souza [UNESP]
Data de Publicação: 2017
Outros Autores: Silva, Marcelo Macchi da, Bordon, Mario Eduardo [UNESP], Swart, Jacobus W., Murphy, R. S.
Tipo de documento: Artigo de conferência
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://hdl.handle.net/11449/165663
Resumo: This paper presents logarithmic CMOS image sensor with wide output voltage swing range. Wide output voltage swing range is achieved by increasing the number of transistors connected as diodes of logarithmic CMOS image sensor. A prototype has been fabricated in 0.35 mu m AMS opto process. Four different pixels were fabricated using 20 mu mx20 mu m Nwel/Psub photodiodes with one, two, three and four transistors in series. The sensitivity measured were 136mV/Dec, 191mV/Dec, 281mV/Dec and 425mV/Dec for the pixels using one, two, three and four transistors in series respectively. This results shows that the sensitivity is increased by N approximately, were N is the number of transistors in series at pixels. Considering that the supply voltage the four- transistor pixel presents total output voltage swing range of 2.65V over a range of 120dB being the supply voltage 3.3V.
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spelling A logarithmic CMOS image sensor with wide output voltage swing rangeCMOShigh sensitivitylogarithmic pixelphotodetectorThis paper presents logarithmic CMOS image sensor with wide output voltage swing range. Wide output voltage swing range is achieved by increasing the number of transistors connected as diodes of logarithmic CMOS image sensor. A prototype has been fabricated in 0.35 mu m AMS opto process. Four different pixels were fabricated using 20 mu mx20 mu m Nwel/Psub photodiodes with one, two, three and four transistors in series. The sensitivity measured were 136mV/Dec, 191mV/Dec, 281mV/Dec and 425mV/Dec for the pixels using one, two, three and four transistors in series respectively. This results shows that the sensitivity is increased by N approximately, were N is the number of transistors in series at pixels. Considering that the supply voltage the four- transistor pixel presents total output voltage swing range of 2.65V over a range of 120dB being the supply voltage 3.3V.Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Sao Paulo State Unvers UNESP, Ave Engn LuizE C Coube 14-01, BR-17033360 Bauru, SP, BrazilIFSP, 50 Marina Cristina, BR-13083852 Cubatao, SP, BrazilUniv Campinas FEEC UNICAMP, Ave Albert Einstein 400, BR-13083852 Campinas, SP, BrazilSao Paulo State Unvers UNESP, Ave Engn LuizE C Coube 14-01, BR-17033360 Bauru, SP, BrazilIeeeUniversidade Estadual Paulista (Unesp)IFSPUniversidade Estadual de Campinas (UNICAMP)Campos, Fernando de Souza [UNESP]Silva, Marcelo Macchi daBordon, Mario Eduardo [UNESP]Swart, Jacobus W.Murphy, R. S.2018-11-28T15:26:09Z2018-11-28T15:26:09Z2017-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject69-722017 International Caribbean Conference On Devices, Circuits And Systems (iccdcs). New York: Ieee, p. 69-72, 2017.2165-3542http://hdl.handle.net/11449/165663WOS:0004051862000145589838844298232Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPeng2017 International Caribbean Conference On Devices, Circuits And Systems (iccdcs)info:eu-repo/semantics/openAccess2024-06-28T13:34:35Zoai:repositorio.unesp.br:11449/165663Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestrepositoriounesp@unesp.bropendoar:29462024-06-28T13:34:35Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv A logarithmic CMOS image sensor with wide output voltage swing range
title A logarithmic CMOS image sensor with wide output voltage swing range
spellingShingle A logarithmic CMOS image sensor with wide output voltage swing range
Campos, Fernando de Souza [UNESP]
CMOS
high sensitivity
logarithmic pixel
photodetector
title_short A logarithmic CMOS image sensor with wide output voltage swing range
title_full A logarithmic CMOS image sensor with wide output voltage swing range
title_fullStr A logarithmic CMOS image sensor with wide output voltage swing range
title_full_unstemmed A logarithmic CMOS image sensor with wide output voltage swing range
title_sort A logarithmic CMOS image sensor with wide output voltage swing range
author Campos, Fernando de Souza [UNESP]
author_facet Campos, Fernando de Souza [UNESP]
Silva, Marcelo Macchi da
Bordon, Mario Eduardo [UNESP]
Swart, Jacobus W.
Murphy, R. S.
author_role author
author2 Silva, Marcelo Macchi da
Bordon, Mario Eduardo [UNESP]
Swart, Jacobus W.
Murphy, R. S.
author2_role author
author
author
author
dc.contributor.none.fl_str_mv Universidade Estadual Paulista (Unesp)
IFSP
Universidade Estadual de Campinas (UNICAMP)
dc.contributor.author.fl_str_mv Campos, Fernando de Souza [UNESP]
Silva, Marcelo Macchi da
Bordon, Mario Eduardo [UNESP]
Swart, Jacobus W.
Murphy, R. S.
dc.subject.por.fl_str_mv CMOS
high sensitivity
logarithmic pixel
photodetector
topic CMOS
high sensitivity
logarithmic pixel
photodetector
description This paper presents logarithmic CMOS image sensor with wide output voltage swing range. Wide output voltage swing range is achieved by increasing the number of transistors connected as diodes of logarithmic CMOS image sensor. A prototype has been fabricated in 0.35 mu m AMS opto process. Four different pixels were fabricated using 20 mu mx20 mu m Nwel/Psub photodiodes with one, two, three and four transistors in series. The sensitivity measured were 136mV/Dec, 191mV/Dec, 281mV/Dec and 425mV/Dec for the pixels using one, two, three and four transistors in series respectively. This results shows that the sensitivity is increased by N approximately, were N is the number of transistors in series at pixels. Considering that the supply voltage the four- transistor pixel presents total output voltage swing range of 2.65V over a range of 120dB being the supply voltage 3.3V.
publishDate 2017
dc.date.none.fl_str_mv 2017-01-01
2018-11-28T15:26:09Z
2018-11-28T15:26:09Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
status_str publishedVersion
dc.identifier.uri.fl_str_mv 2017 International Caribbean Conference On Devices, Circuits And Systems (iccdcs). New York: Ieee, p. 69-72, 2017.
2165-3542
http://hdl.handle.net/11449/165663
WOS:000405186200014
5589838844298232
identifier_str_mv 2017 International Caribbean Conference On Devices, Circuits And Systems (iccdcs). New York: Ieee, p. 69-72, 2017.
2165-3542
WOS:000405186200014
5589838844298232
url http://hdl.handle.net/11449/165663
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 2017 International Caribbean Conference On Devices, Circuits And Systems (iccdcs)
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 69-72
dc.publisher.none.fl_str_mv Ieee
publisher.none.fl_str_mv Ieee
dc.source.none.fl_str_mv Web of Science
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv repositoriounesp@unesp.br
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