Analysis of the transistor efficiency of Gas Phase Zn Diffusion In0.53Ga0.47As nTFETs at different temperatures
Autor(a) principal: | |
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Data de Publicação: | 2017 |
Outros Autores: | , , , , , , , , , , , |
Tipo de documento: | Artigo de conferência |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://hdl.handle.net/11449/160098 |
Resumo: | In this work, the influence of the temperature and the different equivalent oxide thickness (EOT) of In0.53Ga0.47As nTFETs fabricated with gas phase Zn diffusion is analyzed. The different devices have in their gates stacks 3 nm of HfO2 (with an EOT of 1 nm) or 2 nm of HfO2 (with an EOT of 0.8 nm). The use of an EOT of 0.8 nm increases the band-to-band tunneling generation and also improves the subthreshold region characteristics, presenting a sub 60 mV/dec minimum subthreshold swing (56 mV/dec) at room temperature, resulting in better efficiency in weak conduction. Considering the temperature influence, the on-state current is less affected than the off-state current due to the band-to-band tunneling mechanism. In the subthreshold region the temperature decrease, which strongly reduces the off-state current, allows the band-to-band tunneling current to be more dominant, resulting in a better subthreshold swing and, consequently, a better transistor efficiency in the weak conduction regime. The opposite behavior occurs when heating the devices, reducing the influence of the band-to-band tunneling in the subthreshold region, degrading both the subthreshold swing and transistor efficiency in the weak conduction regime. In the strong conduction regime, the transistor follows the transconductance tendency, increasing for higher temperatures. |
id |
UNSP_101b512d5e7ff95fcc4d0bcc2196895a |
---|---|
oai_identifier_str |
oai:repositorio.unesp.br:11449/160098 |
network_acronym_str |
UNSP |
network_name_str |
Repositório Institucional da UNESP |
repository_id_str |
2946 |
spelling |
Analysis of the transistor efficiency of Gas Phase Zn Diffusion In0.53Ga0.47As nTFETs at different temperaturesTFETAnalog ParametersIII-V materialsTransistor efficiencyIn this work, the influence of the temperature and the different equivalent oxide thickness (EOT) of In0.53Ga0.47As nTFETs fabricated with gas phase Zn diffusion is analyzed. The different devices have in their gates stacks 3 nm of HfO2 (with an EOT of 1 nm) or 2 nm of HfO2 (with an EOT of 0.8 nm). The use of an EOT of 0.8 nm increases the band-to-band tunneling generation and also improves the subthreshold region characteristics, presenting a sub 60 mV/dec minimum subthreshold swing (56 mV/dec) at room temperature, resulting in better efficiency in weak conduction. Considering the temperature influence, the on-state current is less affected than the off-state current due to the band-to-band tunneling mechanism. In the subthreshold region the temperature decrease, which strongly reduces the off-state current, allows the band-to-band tunneling current to be more dominant, resulting in a better subthreshold swing and, consequently, a better transistor efficiency in the weak conduction regime. The opposite behavior occurs when heating the devices, reducing the influence of the band-to-band tunneling in the subthreshold region, degrading both the subthreshold swing and transistor efficiency in the weak conduction regime. In the strong conduction regime, the transistor follows the transconductance tendency, increasing for higher temperatures.Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)imec's Logic Device ProgramUniv Sao Paulo, LSI PSI USP, Sao Paulo, BrazilIMEC, Leuven, BelgiumSao Paulo State Univ UNESP, Sao Joao Da Boa Vista, BrazilKatholieke Univ Leuven, EE Dept, Leuven, BelgiumSao Paulo State Univ UNESP, Sao Joao Da Boa Vista, BrazilIeeeUniversidade de São Paulo (USP)IMECUniversidade Estadual Paulista (Unesp)Katholieke Univ LeuvenBordallo, C.Martino, J. A.Agopian, P. G. D. [UNESP]Alian, A.Mols, Y.Rooyackers, R.Vandooren, A.Verhulst, A. S.Simoen, E.Claeys, C.Collaert, N.Sarafis, P.Nassiopoulou, A. G.2018-11-26T15:47:28Z2018-11-26T15:47:28Z2017-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject109-1122017 Joint International Eurosoi Workshop And International Conference On Ultimate Integration On Silicon (eurosoi-ulis 2017). New York: Ieee, p. 109-112, 2017.2330-5738http://hdl.handle.net/11449/160098WOS:00042521090003004969095954656960000-0002-0886-7798Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPeng2017 Joint International Eurosoi Workshop And International Conference On Ultimate Integration On Silicon (eurosoi-ulis 2017)info:eu-repo/semantics/openAccess2021-10-23T21:44:34Zoai:repositorio.unesp.br:11449/160098Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462021-10-23T21:44:34Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Analysis of the transistor efficiency of Gas Phase Zn Diffusion In0.53Ga0.47As nTFETs at different temperatures |
title |
Analysis of the transistor efficiency of Gas Phase Zn Diffusion In0.53Ga0.47As nTFETs at different temperatures |
spellingShingle |
Analysis of the transistor efficiency of Gas Phase Zn Diffusion In0.53Ga0.47As nTFETs at different temperatures Bordallo, C. TFET Analog Parameters III-V materials Transistor efficiency |
title_short |
Analysis of the transistor efficiency of Gas Phase Zn Diffusion In0.53Ga0.47As nTFETs at different temperatures |
title_full |
Analysis of the transistor efficiency of Gas Phase Zn Diffusion In0.53Ga0.47As nTFETs at different temperatures |
title_fullStr |
Analysis of the transistor efficiency of Gas Phase Zn Diffusion In0.53Ga0.47As nTFETs at different temperatures |
title_full_unstemmed |
Analysis of the transistor efficiency of Gas Phase Zn Diffusion In0.53Ga0.47As nTFETs at different temperatures |
title_sort |
Analysis of the transistor efficiency of Gas Phase Zn Diffusion In0.53Ga0.47As nTFETs at different temperatures |
author |
Bordallo, C. |
author_facet |
Bordallo, C. Martino, J. A. Agopian, P. G. D. [UNESP] Alian, A. Mols, Y. Rooyackers, R. Vandooren, A. Verhulst, A. S. Simoen, E. Claeys, C. Collaert, N. Sarafis, P. Nassiopoulou, A. G. |
author_role |
author |
author2 |
Martino, J. A. Agopian, P. G. D. [UNESP] Alian, A. Mols, Y. Rooyackers, R. Vandooren, A. Verhulst, A. S. Simoen, E. Claeys, C. Collaert, N. Sarafis, P. Nassiopoulou, A. G. |
author2_role |
author author author author author author author author author author author author |
dc.contributor.none.fl_str_mv |
Universidade de São Paulo (USP) IMEC Universidade Estadual Paulista (Unesp) Katholieke Univ Leuven |
dc.contributor.author.fl_str_mv |
Bordallo, C. Martino, J. A. Agopian, P. G. D. [UNESP] Alian, A. Mols, Y. Rooyackers, R. Vandooren, A. Verhulst, A. S. Simoen, E. Claeys, C. Collaert, N. Sarafis, P. Nassiopoulou, A. G. |
dc.subject.por.fl_str_mv |
TFET Analog Parameters III-V materials Transistor efficiency |
topic |
TFET Analog Parameters III-V materials Transistor efficiency |
description |
In this work, the influence of the temperature and the different equivalent oxide thickness (EOT) of In0.53Ga0.47As nTFETs fabricated with gas phase Zn diffusion is analyzed. The different devices have in their gates stacks 3 nm of HfO2 (with an EOT of 1 nm) or 2 nm of HfO2 (with an EOT of 0.8 nm). The use of an EOT of 0.8 nm increases the band-to-band tunneling generation and also improves the subthreshold region characteristics, presenting a sub 60 mV/dec minimum subthreshold swing (56 mV/dec) at room temperature, resulting in better efficiency in weak conduction. Considering the temperature influence, the on-state current is less affected than the off-state current due to the band-to-band tunneling mechanism. In the subthreshold region the temperature decrease, which strongly reduces the off-state current, allows the band-to-band tunneling current to be more dominant, resulting in a better subthreshold swing and, consequently, a better transistor efficiency in the weak conduction regime. The opposite behavior occurs when heating the devices, reducing the influence of the band-to-band tunneling in the subthreshold region, degrading both the subthreshold swing and transistor efficiency in the weak conduction regime. In the strong conduction regime, the transistor follows the transconductance tendency, increasing for higher temperatures. |
publishDate |
2017 |
dc.date.none.fl_str_mv |
2017-01-01 2018-11-26T15:47:28Z 2018-11-26T15:47:28Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/conferenceObject |
format |
conferenceObject |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
2017 Joint International Eurosoi Workshop And International Conference On Ultimate Integration On Silicon (eurosoi-ulis 2017). New York: Ieee, p. 109-112, 2017. 2330-5738 http://hdl.handle.net/11449/160098 WOS:000425210900030 0496909595465696 0000-0002-0886-7798 |
identifier_str_mv |
2017 Joint International Eurosoi Workshop And International Conference On Ultimate Integration On Silicon (eurosoi-ulis 2017). New York: Ieee, p. 109-112, 2017. 2330-5738 WOS:000425210900030 0496909595465696 0000-0002-0886-7798 |
url |
http://hdl.handle.net/11449/160098 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
2017 Joint International Eurosoi Workshop And International Conference On Ultimate Integration On Silicon (eurosoi-ulis 2017) |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
109-112 |
dc.publisher.none.fl_str_mv |
Ieee |
publisher.none.fl_str_mv |
Ieee |
dc.source.none.fl_str_mv |
Web of Science reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1803046681113001984 |