Device-based threading dislocation assessment in germanium hetero-epitaxy

• Autor(a) principal: Simoen, Eddy
• Data de Publicação: 2019
• Outros Autores: Claeys, Cor, Oliveira, Alberto, Agopian, Paula [UNESP], Martino, Joao, Hsu, Brent, Eneman, Geert, Rosseel, Eric, Loo, Roger, Arimura, Hiroaki, Horiguchi, Naoto, Wen, Wei-Chen, Nakashima, Hiroshi
• Tipo de documento: Artigo de conferência
• Idioma: eng
• Título da fonte: Repositório Institucional da UNESP
• Texto Completo: http://dx.doi.org/10.1109/SBMicro.2019.8919472; http://hdl.handle.net/11449/198334
• topic: Deep-Level Transient Spectroscopy; Extended Defects; FinFETs; Generation-Recombination noise; Germanium-on-silicon; leakage current; MOScap; p-n junction diode; Threading Dislocations

A review on the electrical activity of extended defects and, more specifically, threading dislocations in germanium hetero-epitaxial layers is reported here. Focus is on the impact of some basic types of devices, like a p-n junction diode, a Metal-Oxide-Semiconductor (MOS) capacitor and a Fin-Field-Effect Transistor (FinFET) fabricated in Ge-on-Si. A good understanding of the impact on the leakage current and lifetime in p-n diodes will be shown. Deep-Level Transient Spectroscopy on Ge MOScaps enables the investigation of bulk and interface states related to threading dislocations Finally, the application of Generation-Recombination (GR) noise spectroscopy to the study of GR centers in strained and relaxed Ge-on-Si FinFETs will be illustrated.