Device-Based Threading Dislocation Assessment in Germanium Hetero-Epitaxy
Autor(a) principal: | |
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Data de Publicação: | 2019 |
Outros Autores: | , , , , , , , , , , , , |
Tipo de documento: | Artigo de conferência |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://hdl.handle.net/11449/195393 |
Resumo: | A review on the electrical activity of extended defects and, more specifically, threading dislocations in germanium hetero-epitaxial layers is reported here. Focus is on the impact of some basic types of devices, like a p-n junction diode, a Metal-Oxide-Semiconductor (MOS) capacitor and a Fin-Field-Effect Transistor (FinFET) fabricated in Ge-on-Si. A good understanding of the impact on the leakage current and lifetime in p-n diodes will be shown. Deep-Level Transient Spectroscopy on Ge MOScaps enables the investigation of bulk and interface states related to threading dislocations Finally, the application of Generation-Recombination (GR) noise spectroscopy to the study of GR centers in strained and relaxed Ge-on-Si FinFETs will be illustrated. |
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Repositório Institucional da UNESP |
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Device-Based Threading Dislocation Assessment in Germanium Hetero-EpitaxyGermanium-on-siliconFinFETsExtended DefectsThreading DislocationsDeep-Level Transient Spectroscopyp-n junction diodeleakage currentGeneration-Recombination noiseMOScapA review on the electrical activity of extended defects and, more specifically, threading dislocations in germanium hetero-epitaxial layers is reported here. Focus is on the impact of some basic types of devices, like a p-n junction diode, a Metal-Oxide-Semiconductor (MOS) capacitor and a Fin-Field-Effect Transistor (FinFET) fabricated in Ge-on-Si. A good understanding of the impact on the leakage current and lifetime in p-n diodes will be shown. Deep-Level Transient Spectroscopy on Ge MOScaps enables the investigation of bulk and interface states related to threading dislocations Finally, the application of Generation-Recombination (GR) noise spectroscopy to the study of GR centers in strained and relaxed Ge-on-Si FinFETs will be illustrated.European CommissionIMEC, Leuven, BelgiumKyushu Univ, Fukuoka, JapanKatholieke Univ Leuven, EE Dept, Leuven, BelgiumUTFPR, Campus Toledo, Toledo, BrazilSao Paulo State Univ, UNESP, Sao Joao Da Boa Vista, BrazilUniv Sao Paulo, Sao Paulo, BrazilSao Paulo State Univ, UNESP, Sao Joao Da Boa Vista, BrazilIeeeIMECKyushu UnivKatholieke Univ LeuvenUTFPRUniversidade Estadual Paulista (Unesp)Universidade de São Paulo (USP)Simoen, EddyHsu, BrentEneman, GeertRosseel, EricLoo, RogerArimura, HiroakiHoriguchi, NaotoWen, Wei-ChenNakashima, HiroshiClaeys, CorOliveira, AlbertoAgopian, Paula [UNESP]Martino, JoaoIEEE2020-12-10T17:33:08Z2020-12-10T17:33:08Z2019-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject62019 34th Symposium On Microelectronics Technology And Devices (sbmicro 2019). New York: Ieee, 6 p., 2019.http://hdl.handle.net/11449/195393WOS:000534490900063Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPeng2019 34th Symposium On Microelectronics Technology And Devices (sbmicro 2019)info:eu-repo/semantics/openAccess2021-10-22T17:27:24Zoai:repositorio.unesp.br:11449/195393Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462021-10-22T17:27:24Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Device-Based Threading Dislocation Assessment in Germanium Hetero-Epitaxy |
title |
Device-Based Threading Dislocation Assessment in Germanium Hetero-Epitaxy |
spellingShingle |
Device-Based Threading Dislocation Assessment in Germanium Hetero-Epitaxy Simoen, Eddy Germanium-on-silicon FinFETs Extended Defects Threading Dislocations Deep-Level Transient Spectroscopy p-n junction diode leakage current Generation-Recombination noise MOScap |
title_short |
Device-Based Threading Dislocation Assessment in Germanium Hetero-Epitaxy |
title_full |
Device-Based Threading Dislocation Assessment in Germanium Hetero-Epitaxy |
title_fullStr |
Device-Based Threading Dislocation Assessment in Germanium Hetero-Epitaxy |
title_full_unstemmed |
Device-Based Threading Dislocation Assessment in Germanium Hetero-Epitaxy |
title_sort |
Device-Based Threading Dislocation Assessment in Germanium Hetero-Epitaxy |
author |
Simoen, Eddy |
author_facet |
Simoen, Eddy Hsu, Brent Eneman, Geert Rosseel, Eric Loo, Roger Arimura, Hiroaki Horiguchi, Naoto Wen, Wei-Chen Nakashima, Hiroshi Claeys, Cor Oliveira, Alberto Agopian, Paula [UNESP] Martino, Joao IEEE |
author_role |
author |
author2 |
Hsu, Brent Eneman, Geert Rosseel, Eric Loo, Roger Arimura, Hiroaki Horiguchi, Naoto Wen, Wei-Chen Nakashima, Hiroshi Claeys, Cor Oliveira, Alberto Agopian, Paula [UNESP] Martino, Joao IEEE |
author2_role |
author author author author author author author author author author author author author |
dc.contributor.none.fl_str_mv |
IMEC Kyushu Univ Katholieke Univ Leuven UTFPR Universidade Estadual Paulista (Unesp) Universidade de São Paulo (USP) |
dc.contributor.author.fl_str_mv |
Simoen, Eddy Hsu, Brent Eneman, Geert Rosseel, Eric Loo, Roger Arimura, Hiroaki Horiguchi, Naoto Wen, Wei-Chen Nakashima, Hiroshi Claeys, Cor Oliveira, Alberto Agopian, Paula [UNESP] Martino, Joao IEEE |
dc.subject.por.fl_str_mv |
Germanium-on-silicon FinFETs Extended Defects Threading Dislocations Deep-Level Transient Spectroscopy p-n junction diode leakage current Generation-Recombination noise MOScap |
topic |
Germanium-on-silicon FinFETs Extended Defects Threading Dislocations Deep-Level Transient Spectroscopy p-n junction diode leakage current Generation-Recombination noise MOScap |
description |
A review on the electrical activity of extended defects and, more specifically, threading dislocations in germanium hetero-epitaxial layers is reported here. Focus is on the impact of some basic types of devices, like a p-n junction diode, a Metal-Oxide-Semiconductor (MOS) capacitor and a Fin-Field-Effect Transistor (FinFET) fabricated in Ge-on-Si. A good understanding of the impact on the leakage current and lifetime in p-n diodes will be shown. Deep-Level Transient Spectroscopy on Ge MOScaps enables the investigation of bulk and interface states related to threading dislocations Finally, the application of Generation-Recombination (GR) noise spectroscopy to the study of GR centers in strained and relaxed Ge-on-Si FinFETs will be illustrated. |
publishDate |
2019 |
dc.date.none.fl_str_mv |
2019-01-01 2020-12-10T17:33:08Z 2020-12-10T17:33:08Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/conferenceObject |
format |
conferenceObject |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
2019 34th Symposium On Microelectronics Technology And Devices (sbmicro 2019). New York: Ieee, 6 p., 2019. http://hdl.handle.net/11449/195393 WOS:000534490900063 |
identifier_str_mv |
2019 34th Symposium On Microelectronics Technology And Devices (sbmicro 2019). New York: Ieee, 6 p., 2019. WOS:000534490900063 |
url |
http://hdl.handle.net/11449/195393 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
2019 34th Symposium On Microelectronics Technology And Devices (sbmicro 2019) |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
6 |
dc.publisher.none.fl_str_mv |
Ieee |
publisher.none.fl_str_mv |
Ieee |
dc.source.none.fl_str_mv |
Web of Science reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1803046038298165248 |