An accurate low-voltage analog memory-cell with built-in multiplication
Autor(a) principal: | |
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Data de Publicação: | 2001 |
Outros Autores: | |
Tipo de documento: | Artigo de conferência |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1109/ISCAS.2001.921798 http://hdl.handle.net/11449/66423 |
Resumo: | A CMOS memory-cell for dynamic storage of analog data and suitable for LVLP applications is proposed. Information is memorized as the gate-voltage of input-transistor of a gain-boosting triode-transconductor. The enhanced output-resistance improves accuracy on reading out the sampled currents. Additionally, a four-quadrant multiplication between the input to regulation-amplifier of the transconductor and the stored voltage is provided. Designing complies with a low-voltage 1.2μm N-well CMOS fabrication process. For a 1.3V-supply, CCELL=3.6pF and sampling interval is 0.25μA≤ ISAMPLE ≤ 0.75μA. The specified retention time is 1.28ms and corresponds to a charge-variation of 1% due to junction leakage @75°C. A range of MR simulations confirm circuit performance. Absolute read-out error is below O.40% while the four-quadrant multiplier nonlinearity, at full-scale is 8.2%. Maximum stand-by consumption is 3.6μW/cell. |
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An accurate low-voltage analog memory-cell with built-in multiplicationAnalog storageBuffer storageComputer simulationGates (transistor)Learning algorithmsPrinted circuit designTransconductanceAnalog memory cellsCMOS integrated circuitsA CMOS memory-cell for dynamic storage of analog data and suitable for LVLP applications is proposed. Information is memorized as the gate-voltage of input-transistor of a gain-boosting triode-transconductor. The enhanced output-resistance improves accuracy on reading out the sampled currents. Additionally, a four-quadrant multiplication between the input to regulation-amplifier of the transconductor and the stored voltage is provided. Designing complies with a low-voltage 1.2μm N-well CMOS fabrication process. For a 1.3V-supply, CCELL=3.6pF and sampling interval is 0.25μA≤ ISAMPLE ≤ 0.75μA. The specified retention time is 1.28ms and corresponds to a charge-variation of 1% due to junction leakage @75°C. A range of MR simulations confirm circuit performance. Absolute read-out error is below O.40% while the four-quadrant multiplier nonlinearity, at full-scale is 8.2%. Maximum stand-by consumption is 3.6μW/cell.Electrical Engineering Dept. Universidade Estadual Paulista, CP 205, CEP 12516-410 GuaratinguetaElectrical Engineering Dept. Universidade Estadual Paulista, CP 205, CEP 12516-410 GuaratinguetaUniversidade Estadual Paulista (Unesp)De Lima, J. A. [UNESP]Cordeiro, A. S. [UNESP]2014-05-27T11:20:13Z2014-05-27T11:20:13Z2001-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject101-104http://dx.doi.org/10.1109/ISCAS.2001.921798Proceedings - IEEE International Symposium on Circuits and Systems, v. 1, p. 101-104.0271-4310http://hdl.handle.net/11449/6642310.1109/ISCAS.2001.9217982-s2.0-0035016268Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengProceedings - IEEE International Symposium on Circuits and Systems0,237info:eu-repo/semantics/openAccess2021-10-23T21:41:38Zoai:repositorio.unesp.br:11449/66423Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462021-10-23T21:41:38Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
An accurate low-voltage analog memory-cell with built-in multiplication |
title |
An accurate low-voltage analog memory-cell with built-in multiplication |
spellingShingle |
An accurate low-voltage analog memory-cell with built-in multiplication De Lima, J. A. [UNESP] Analog storage Buffer storage Computer simulation Gates (transistor) Learning algorithms Printed circuit design Transconductance Analog memory cells CMOS integrated circuits |
title_short |
An accurate low-voltage analog memory-cell with built-in multiplication |
title_full |
An accurate low-voltage analog memory-cell with built-in multiplication |
title_fullStr |
An accurate low-voltage analog memory-cell with built-in multiplication |
title_full_unstemmed |
An accurate low-voltage analog memory-cell with built-in multiplication |
title_sort |
An accurate low-voltage analog memory-cell with built-in multiplication |
author |
De Lima, J. A. [UNESP] |
author_facet |
De Lima, J. A. [UNESP] Cordeiro, A. S. [UNESP] |
author_role |
author |
author2 |
Cordeiro, A. S. [UNESP] |
author2_role |
author |
dc.contributor.none.fl_str_mv |
Universidade Estadual Paulista (Unesp) |
dc.contributor.author.fl_str_mv |
De Lima, J. A. [UNESP] Cordeiro, A. S. [UNESP] |
dc.subject.por.fl_str_mv |
Analog storage Buffer storage Computer simulation Gates (transistor) Learning algorithms Printed circuit design Transconductance Analog memory cells CMOS integrated circuits |
topic |
Analog storage Buffer storage Computer simulation Gates (transistor) Learning algorithms Printed circuit design Transconductance Analog memory cells CMOS integrated circuits |
description |
A CMOS memory-cell for dynamic storage of analog data and suitable for LVLP applications is proposed. Information is memorized as the gate-voltage of input-transistor of a gain-boosting triode-transconductor. The enhanced output-resistance improves accuracy on reading out the sampled currents. Additionally, a four-quadrant multiplication between the input to regulation-amplifier of the transconductor and the stored voltage is provided. Designing complies with a low-voltage 1.2μm N-well CMOS fabrication process. For a 1.3V-supply, CCELL=3.6pF and sampling interval is 0.25μA≤ ISAMPLE ≤ 0.75μA. The specified retention time is 1.28ms and corresponds to a charge-variation of 1% due to junction leakage @75°C. A range of MR simulations confirm circuit performance. Absolute read-out error is below O.40% while the four-quadrant multiplier nonlinearity, at full-scale is 8.2%. Maximum stand-by consumption is 3.6μW/cell. |
publishDate |
2001 |
dc.date.none.fl_str_mv |
2001-01-01 2014-05-27T11:20:13Z 2014-05-27T11:20:13Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/conferenceObject |
format |
conferenceObject |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1109/ISCAS.2001.921798 Proceedings - IEEE International Symposium on Circuits and Systems, v. 1, p. 101-104. 0271-4310 http://hdl.handle.net/11449/66423 10.1109/ISCAS.2001.921798 2-s2.0-0035016268 |
url |
http://dx.doi.org/10.1109/ISCAS.2001.921798 http://hdl.handle.net/11449/66423 |
identifier_str_mv |
Proceedings - IEEE International Symposium on Circuits and Systems, v. 1, p. 101-104. 0271-4310 10.1109/ISCAS.2001.921798 2-s2.0-0035016268 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Proceedings - IEEE International Symposium on Circuits and Systems 0,237 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
101-104 |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1803046322819825664 |