A negative-bias-temperature-instability study on omega-gate silicon nanowire SOI pMOSFETs

Detalhes bibliográficos
Autor(a) principal: Silva, Vanessa C. P.
Data de Publicação: 2019
Outros Autores: Wirth, Gilson I., Martino, Joao A., Agopian, Paula G. D. [UNESP]
Tipo de documento: Artigo de conferência
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1109/SBMicro.2019.8919276
http://hdl.handle.net/11449/198333
Resumo: The Negative-Bias-Temperature-Instability (NBTI) is an important reliability parameter for advanced technology nodes. This work presents an experimental study of NBTI in omega-gate nanowire (NW) pMOSFET. The 3D-numerical simulations were performed in order to better understand the NBTI effect in NW transistors. The results shows that NBTI in NW is high (Δ VT≈200-300mV-for W = 10nm) due to the higher gate oxide electric field accelerating the NBTI effect providing a higher degradation. This study was performed for different channel widths and lengths.
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spelling A negative-bias-temperature-instability study on omega-gate silicon nanowire SOI pMOSFETsMOSFETNBTINWSOIThe Negative-Bias-Temperature-Instability (NBTI) is an important reliability parameter for advanced technology nodes. This work presents an experimental study of NBTI in omega-gate nanowire (NW) pMOSFET. The 3D-numerical simulations were performed in order to better understand the NBTI effect in NW transistors. The results shows that NBTI in NW is high (Δ VT≈200-300mV-for W = 10nm) due to the higher gate oxide electric field accelerating the NBTI effect providing a higher degradation. This study was performed for different channel widths and lengths.University of Sao Paulo LSI/PSI/USPRio Grande Do sul Federal University UFRGSUNESP Sao Paulo State UniversityUNESP Sao Paulo State UniversityUniversidade de São Paulo (USP)UFRGSUniversidade Estadual Paulista (Unesp)Silva, Vanessa C. P.Wirth, Gilson I.Martino, Joao A.Agopian, Paula G. D. [UNESP]2020-12-12T01:09:54Z2020-12-12T01:09:54Z2019-08-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObjecthttp://dx.doi.org/10.1109/SBMicro.2019.8919276SBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices.http://hdl.handle.net/11449/19833310.1109/SBMicro.2019.89192762-s2.0-85077200437Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengSBMicro 2019 - 34th Symposium on Microelectronics Technology and Devicesinfo:eu-repo/semantics/openAccess2021-10-23T10:02:24Zoai:repositorio.unesp.br:11449/198333Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T17:33:20.864965Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv A negative-bias-temperature-instability study on omega-gate silicon nanowire SOI pMOSFETs
title A negative-bias-temperature-instability study on omega-gate silicon nanowire SOI pMOSFETs
spellingShingle A negative-bias-temperature-instability study on omega-gate silicon nanowire SOI pMOSFETs
Silva, Vanessa C. P.
MOSFET
NBTI
NW
SOI
title_short A negative-bias-temperature-instability study on omega-gate silicon nanowire SOI pMOSFETs
title_full A negative-bias-temperature-instability study on omega-gate silicon nanowire SOI pMOSFETs
title_fullStr A negative-bias-temperature-instability study on omega-gate silicon nanowire SOI pMOSFETs
title_full_unstemmed A negative-bias-temperature-instability study on omega-gate silicon nanowire SOI pMOSFETs
title_sort A negative-bias-temperature-instability study on omega-gate silicon nanowire SOI pMOSFETs
author Silva, Vanessa C. P.
author_facet Silva, Vanessa C. P.
Wirth, Gilson I.
Martino, Joao A.
Agopian, Paula G. D. [UNESP]
author_role author
author2 Wirth, Gilson I.
Martino, Joao A.
Agopian, Paula G. D. [UNESP]
author2_role author
author
author
dc.contributor.none.fl_str_mv Universidade de São Paulo (USP)
UFRGS
Universidade Estadual Paulista (Unesp)
dc.contributor.author.fl_str_mv Silva, Vanessa C. P.
Wirth, Gilson I.
Martino, Joao A.
Agopian, Paula G. D. [UNESP]
dc.subject.por.fl_str_mv MOSFET
NBTI
NW
SOI
topic MOSFET
NBTI
NW
SOI
description The Negative-Bias-Temperature-Instability (NBTI) is an important reliability parameter for advanced technology nodes. This work presents an experimental study of NBTI in omega-gate nanowire (NW) pMOSFET. The 3D-numerical simulations were performed in order to better understand the NBTI effect in NW transistors. The results shows that NBTI in NW is high (Δ VT≈200-300mV-for W = 10nm) due to the higher gate oxide electric field accelerating the NBTI effect providing a higher degradation. This study was performed for different channel widths and lengths.
publishDate 2019
dc.date.none.fl_str_mv 2019-08-01
2020-12-12T01:09:54Z
2020-12-12T01:09:54Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1109/SBMicro.2019.8919276
SBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices.
http://hdl.handle.net/11449/198333
10.1109/SBMicro.2019.8919276
2-s2.0-85077200437
url http://dx.doi.org/10.1109/SBMicro.2019.8919276
http://hdl.handle.net/11449/198333
identifier_str_mv SBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices.
10.1109/SBMicro.2019.8919276
2-s2.0-85077200437
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv SBMicro 2019 - 34th Symposium on Microelectronics Technology and Devices
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
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