Analysis of the negative-bias-temperature-instability on omega-gate silicon nanowire soi mosfets with different dimensions

Detalhes bibliográficos
Autor(a) principal: Silva, Vanessa C. P.
Data de Publicação: 2020
Outros Autores: Wirth, Gilson I., Martino, João A., Agopian, Paula G. D. [UNESP]
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.29292/jics.v15i2.126
http://hdl.handle.net/11449/199368
Resumo: This work presents an experimental analysis of the Negative-Bias-Temperature-Instability (NBTI) on omegagate nanowire (NW) pMOSFETS transistors and the trends analysis from simulations, focusing on the influence of channel length and width, since it is an important reliability parameter for advanced technology nodes. 3D-numerical simulations were performed as guideline for a trend analysis. The results show a high NBTI in NW (ΔVT≈200-300mV – for WNW=10nm) due to a high defect density and high gate oxide electric field accelerating the NBTI effect providing a higher degradation.
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spelling Analysis of the negative-bias-temperature-instability on omega-gate silicon nanowire soi mosfets with different dimensionsMOSFETNBTINWSOIThis work presents an experimental analysis of the Negative-Bias-Temperature-Instability (NBTI) on omegagate nanowire (NW) pMOSFETS transistors and the trends analysis from simulations, focusing on the influence of channel length and width, since it is an important reliability parameter for advanced technology nodes. 3D-numerical simulations were performed as guideline for a trend analysis. The results show a high NBTI in NW (ΔVT≈200-300mV – for WNW=10nm) due to a high defect density and high gate oxide electric field accelerating the NBTI effect providing a higher degradation.Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)LSI/PSI/USP University of Sao PauloUFRGS Rio Grande do Sul Federal UniversityUNESP Sao Paulo State UniversityUNESP Sao Paulo State UniversityUniversidade de São Paulo (USP)Rio Grande do Sul Federal UniversityUniversidade Estadual Paulista (Unesp)Silva, Vanessa C. P.Wirth, Gilson I.Martino, João A.Agopian, Paula G. D. [UNESP]2020-12-12T01:37:52Z2020-12-12T01:37:52Z2020-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article1-5http://dx.doi.org/10.29292/jics.v15i2.126Journal of Integrated Circuits and Systems, v. 15, n. 2, p. 1-5, 2020.1872-02341807-1953http://hdl.handle.net/11449/19936810.29292/jics.v15i2.1262-s2.0-85090610961Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengJournal of Integrated Circuits and Systemsinfo:eu-repo/semantics/openAccess2021-10-22T17:19:44Zoai:repositorio.unesp.br:11449/199368Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T17:22:24.248655Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Analysis of the negative-bias-temperature-instability on omega-gate silicon nanowire soi mosfets with different dimensions
title Analysis of the negative-bias-temperature-instability on omega-gate silicon nanowire soi mosfets with different dimensions
spellingShingle Analysis of the negative-bias-temperature-instability on omega-gate silicon nanowire soi mosfets with different dimensions
Silva, Vanessa C. P.
MOSFET
NBTI
NW
SOI
title_short Analysis of the negative-bias-temperature-instability on omega-gate silicon nanowire soi mosfets with different dimensions
title_full Analysis of the negative-bias-temperature-instability on omega-gate silicon nanowire soi mosfets with different dimensions
title_fullStr Analysis of the negative-bias-temperature-instability on omega-gate silicon nanowire soi mosfets with different dimensions
title_full_unstemmed Analysis of the negative-bias-temperature-instability on omega-gate silicon nanowire soi mosfets with different dimensions
title_sort Analysis of the negative-bias-temperature-instability on omega-gate silicon nanowire soi mosfets with different dimensions
author Silva, Vanessa C. P.
author_facet Silva, Vanessa C. P.
Wirth, Gilson I.
Martino, João A.
Agopian, Paula G. D. [UNESP]
author_role author
author2 Wirth, Gilson I.
Martino, João A.
Agopian, Paula G. D. [UNESP]
author2_role author
author
author
dc.contributor.none.fl_str_mv Universidade de São Paulo (USP)
Rio Grande do Sul Federal University
Universidade Estadual Paulista (Unesp)
dc.contributor.author.fl_str_mv Silva, Vanessa C. P.
Wirth, Gilson I.
Martino, João A.
Agopian, Paula G. D. [UNESP]
dc.subject.por.fl_str_mv MOSFET
NBTI
NW
SOI
topic MOSFET
NBTI
NW
SOI
description This work presents an experimental analysis of the Negative-Bias-Temperature-Instability (NBTI) on omegagate nanowire (NW) pMOSFETS transistors and the trends analysis from simulations, focusing on the influence of channel length and width, since it is an important reliability parameter for advanced technology nodes. 3D-numerical simulations were performed as guideline for a trend analysis. The results show a high NBTI in NW (ΔVT≈200-300mV – for WNW=10nm) due to a high defect density and high gate oxide electric field accelerating the NBTI effect providing a higher degradation.
publishDate 2020
dc.date.none.fl_str_mv 2020-12-12T01:37:52Z
2020-12-12T01:37:52Z
2020-01-01
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.29292/jics.v15i2.126
Journal of Integrated Circuits and Systems, v. 15, n. 2, p. 1-5, 2020.
1872-0234
1807-1953
http://hdl.handle.net/11449/199368
10.29292/jics.v15i2.126
2-s2.0-85090610961
url http://dx.doi.org/10.29292/jics.v15i2.126
http://hdl.handle.net/11449/199368
identifier_str_mv Journal of Integrated Circuits and Systems, v. 15, n. 2, p. 1-5, 2020.
1872-0234
1807-1953
10.29292/jics.v15i2.126
2-s2.0-85090610961
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Journal of Integrated Circuits and Systems
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 1-5
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
_version_ 1808128799887327232

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