Analysis of the negative-bias-temperature-instability on omega-gate silicon nanowire SOI MOSFETs with different dimensions

Detalhes bibliográficos
Autor(a) principal: Silva, Vanessa Cristina Pereira da
Data de Publicação: 2020
Outros Autores: Wirth, Gilson Inacio, Martino, João Antonio, Agopian, Paula Ghedini Der
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/254845
Resumo: This work presents an experimental andThis work presents an experimental and simulated analysis of the Negative-Bias-Temperature-Instability (NBTI) on omega-gate nanowire (NW) pMOSFETS transistors, focusing on the influence of channel length and width, since it is an important reliability parameter for advanced technology nodes. To better understand the obtained results of NBTI effect in NW, the 3D-numerical simulations were performed. The results shows a high NBTI in NW (ΔVT≈200-300mV – for WNW=10nm) due to the higher gate oxide electric field accelerating the NBTI effect providing a higher degradation. simulated analysis of the Negative-Bias-Temperature-Instability (NBTI) on omega-gate nanowire (NW) pMOSFETS transistors, focusing on the influence of channel length and width, since it is an important reliability parameter for advanced technology nodes. To better understand the obtained results of NBTI effect in NW, the 3D-numerical simulations were performed. The results shows a high NBTI in NW (ΔVT≈200-300mV – for WNW=10nm) due to the higher gate oxide electric field accelerating the NBTI effect providing a higher degradation.
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spelling Silva, Vanessa Cristina Pereira daWirth, Gilson InacioMartino, João AntonioAgopian, Paula Ghedini Der2023-02-17T03:22:02Z20201807-1953http://hdl.handle.net/10183/254845001121482This work presents an experimental andThis work presents an experimental and simulated analysis of the Negative-Bias-Temperature-Instability (NBTI) on omega-gate nanowire (NW) pMOSFETS transistors, focusing on the influence of channel length and width, since it is an important reliability parameter for advanced technology nodes. To better understand the obtained results of NBTI effect in NW, the 3D-numerical simulations were performed. The results shows a high NBTI in NW (ΔVT≈200-300mV – for WNW=10nm) due to the higher gate oxide electric field accelerating the NBTI effect providing a higher degradation. simulated analysis of the Negative-Bias-Temperature-Instability (NBTI) on omega-gate nanowire (NW) pMOSFETS transistors, focusing on the influence of channel length and width, since it is an important reliability parameter for advanced technology nodes. To better understand the obtained results of NBTI effect in NW, the 3D-numerical simulations were performed. The results shows a high NBTI in NW (ΔVT≈200-300mV – for WNW=10nm) due to the higher gate oxide electric field accelerating the NBTI effect providing a higher degradation.application/pdfengJournal of integrated circuits and systems. Porto Alegre, RS. Vol. 15, no. 2 (2020), p. 1-5SemicondutoresSOINWBTIMOSFETAnalysis of the negative-bias-temperature-instability on omega-gate silicon nanowire SOI MOSFETs with different dimensionsinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/otherinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSTEXT001121482.pdf.txt001121482.pdf.txtExtracted Texttext/plain21383http://www.lume.ufrgs.br/bitstream/10183/254845/2/001121482.pdf.txt123e4175a3747c0c4ed59176c7b53c2fMD52ORIGINAL001121482.pdfTexto completo (inglês)application/pdf365594http://www.lume.ufrgs.br/bitstream/10183/254845/1/001121482.pdf8308fc03534e687e7598a207e5f16199MD5110183/2548452023-06-30 03:32:39.943284oai:www.lume.ufrgs.br:10183/254845Repositório InstitucionalPUBhttps://lume.ufrgs.br/oai/requestlume@ufrgs.bropendoar:2023-06-30T06:32:39Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Analysis of the negative-bias-temperature-instability on omega-gate silicon nanowire SOI MOSFETs with different dimensions
title Analysis of the negative-bias-temperature-instability on omega-gate silicon nanowire SOI MOSFETs with different dimensions
spellingShingle Analysis of the negative-bias-temperature-instability on omega-gate silicon nanowire SOI MOSFETs with different dimensions
Silva, Vanessa Cristina Pereira da
Semicondutores
SOI
NW
BTI
MOSFET
title_short Analysis of the negative-bias-temperature-instability on omega-gate silicon nanowire SOI MOSFETs with different dimensions
title_full Analysis of the negative-bias-temperature-instability on omega-gate silicon nanowire SOI MOSFETs with different dimensions
title_fullStr Analysis of the negative-bias-temperature-instability on omega-gate silicon nanowire SOI MOSFETs with different dimensions
title_full_unstemmed Analysis of the negative-bias-temperature-instability on omega-gate silicon nanowire SOI MOSFETs with different dimensions
title_sort Analysis of the negative-bias-temperature-instability on omega-gate silicon nanowire SOI MOSFETs with different dimensions
author Silva, Vanessa Cristina Pereira da
author_facet Silva, Vanessa Cristina Pereira da
Wirth, Gilson Inacio
Martino, João Antonio
Agopian, Paula Ghedini Der
author_role author
author2 Wirth, Gilson Inacio
Martino, João Antonio
Agopian, Paula Ghedini Der
author2_role author
author
author
dc.contributor.author.fl_str_mv Silva, Vanessa Cristina Pereira da
Wirth, Gilson Inacio
Martino, João Antonio
Agopian, Paula Ghedini Der
dc.subject.por.fl_str_mv Semicondutores
topic Semicondutores
SOI
NW
BTI
MOSFET
dc.subject.eng.fl_str_mv SOI
NW
BTI
MOSFET
description This work presents an experimental andThis work presents an experimental and simulated analysis of the Negative-Bias-Temperature-Instability (NBTI) on omega-gate nanowire (NW) pMOSFETS transistors, focusing on the influence of channel length and width, since it is an important reliability parameter for advanced technology nodes. To better understand the obtained results of NBTI effect in NW, the 3D-numerical simulations were performed. The results shows a high NBTI in NW (ΔVT≈200-300mV – for WNW=10nm) due to the higher gate oxide electric field accelerating the NBTI effect providing a higher degradation. simulated analysis of the Negative-Bias-Temperature-Instability (NBTI) on omega-gate nanowire (NW) pMOSFETS transistors, focusing on the influence of channel length and width, since it is an important reliability parameter for advanced technology nodes. To better understand the obtained results of NBTI effect in NW, the 3D-numerical simulations were performed. The results shows a high NBTI in NW (ΔVT≈200-300mV – for WNW=10nm) due to the higher gate oxide electric field accelerating the NBTI effect providing a higher degradation.
publishDate 2020
dc.date.issued.fl_str_mv 2020
dc.date.accessioned.fl_str_mv 2023-02-17T03:22:02Z
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/other
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/254845
dc.identifier.issn.pt_BR.fl_str_mv 1807-1953
dc.identifier.nrb.pt_BR.fl_str_mv 001121482
identifier_str_mv 1807-1953
001121482
url http://hdl.handle.net/10183/254845
dc.language.iso.fl_str_mv eng
language eng
dc.relation.ispartof.pt_BR.fl_str_mv Journal of integrated circuits and systems. Porto Alegre, RS. Vol. 15, no. 2 (2020), p. 1-5
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Repositório Institucional da UFRGS
instname:Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
instname_str Universidade Federal do Rio Grande do Sul (UFRGS)
instacron_str UFRGS
institution UFRGS
reponame_str Repositório Institucional da UFRGS
collection Repositório Institucional da UFRGS
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repository.name.fl_str_mv Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)
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