Two-stage amplifier design based on experimental Line-Tunnel FET data

Detalhes bibliográficos
Autor(a) principal: Filho, Walter Gonçalez
Data de Publicação: 2019
Outros Autores: Martino, Joao A., Rangel, Roberto, Agopian, Paula G. D. [UNESP], Simoen, Eddy, Rooyackers, Rita, Claeys, Cor, Collaert, Nadine
Tipo de documento: Artigo de conferência
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1109/S3S46989.2019.9320637
http://hdl.handle.net/11449/205885
Resumo: This work presents for the first time a two-stage operational transconductance amplifier (OTA) design based on experimental Line-TFET devices. To account for different parasitic effects, make the project more feasible and avoid complicated and inaccurate analytical modelling, experimental devices are measured and the data is used in lookup tables to be coded in Verilog-A hardware description language. A two-stage amplifier is designed considering the particularities of these devices and the figures of merit achieved are related to its characteristics, including the non-idealities verified in the experimental characterization. The designed amplifier exhibits extremely high open loop voltage gain, good performance and bandwidth when compared with other TFET designs, at moderate power supply voltage with high output swing and low power consumption. The results obtained are compared with MOSFET designs and with other TFET based amplifiers found in the literature.
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spelling Two-stage amplifier design based on experimental Line-Tunnel FET dataanalog circuit designLine-TFETtwo-stage amplifierThis work presents for the first time a two-stage operational transconductance amplifier (OTA) design based on experimental Line-TFET devices. To account for different parasitic effects, make the project more feasible and avoid complicated and inaccurate analytical modelling, experimental devices are measured and the data is used in lookup tables to be coded in Verilog-A hardware description language. A two-stage amplifier is designed considering the particularities of these devices and the figures of merit achieved are related to its characteristics, including the non-idealities verified in the experimental characterization. The designed amplifier exhibits extremely high open loop voltage gain, good performance and bandwidth when compared with other TFET designs, at moderate power supply voltage with high output swing and low power consumption. The results obtained are compared with MOSFET designs and with other TFET based amplifiers found in the literature.LSI/PSI/USP University of Sao PauloUnesp Sao Paulo State UniversityImecClaRooE.E. Dept Ku LeuvenUnesp Sao Paulo State UniversityUniversidade de São Paulo (USP)Universidade Estadual Paulista (Unesp)ImecClaRooKu LeuvenFilho, Walter GonçalezMartino, Joao A.Rangel, RobertoAgopian, Paula G. D. [UNESP]Simoen, EddyRooyackers, RitaClaeys, CorCollaert, Nadine2021-06-25T10:22:49Z2021-06-25T10:22:49Z2019-10-14info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObjecthttp://dx.doi.org/10.1109/S3S46989.2019.93206372019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019.http://hdl.handle.net/11449/20588510.1109/S3S46989.2019.93206372-s2.0-85100867443Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPeng2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019info:eu-repo/semantics/openAccess2021-10-22T19:44:49Zoai:repositorio.unesp.br:11449/205885Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462021-10-22T19:44:49Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Two-stage amplifier design based on experimental Line-Tunnel FET data
title Two-stage amplifier design based on experimental Line-Tunnel FET data
spellingShingle Two-stage amplifier design based on experimental Line-Tunnel FET data
Filho, Walter Gonçalez
analog circuit design
Line-TFET
two-stage amplifier
title_short Two-stage amplifier design based on experimental Line-Tunnel FET data
title_full Two-stage amplifier design based on experimental Line-Tunnel FET data
title_fullStr Two-stage amplifier design based on experimental Line-Tunnel FET data
title_full_unstemmed Two-stage amplifier design based on experimental Line-Tunnel FET data
title_sort Two-stage amplifier design based on experimental Line-Tunnel FET data
author Filho, Walter Gonçalez
author_facet Filho, Walter Gonçalez
Martino, Joao A.
Rangel, Roberto
Agopian, Paula G. D. [UNESP]
Simoen, Eddy
Rooyackers, Rita
Claeys, Cor
Collaert, Nadine
author_role author
author2 Martino, Joao A.
Rangel, Roberto
Agopian, Paula G. D. [UNESP]
Simoen, Eddy
Rooyackers, Rita
Claeys, Cor
Collaert, Nadine
author2_role author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Universidade de São Paulo (USP)
Universidade Estadual Paulista (Unesp)
Imec
ClaRoo
Ku Leuven
dc.contributor.author.fl_str_mv Filho, Walter Gonçalez
Martino, Joao A.
Rangel, Roberto
Agopian, Paula G. D. [UNESP]
Simoen, Eddy
Rooyackers, Rita
Claeys, Cor
Collaert, Nadine
dc.subject.por.fl_str_mv analog circuit design
Line-TFET
two-stage amplifier
topic analog circuit design
Line-TFET
two-stage amplifier
description This work presents for the first time a two-stage operational transconductance amplifier (OTA) design based on experimental Line-TFET devices. To account for different parasitic effects, make the project more feasible and avoid complicated and inaccurate analytical modelling, experimental devices are measured and the data is used in lookup tables to be coded in Verilog-A hardware description language. A two-stage amplifier is designed considering the particularities of these devices and the figures of merit achieved are related to its characteristics, including the non-idealities verified in the experimental characterization. The designed amplifier exhibits extremely high open loop voltage gain, good performance and bandwidth when compared with other TFET designs, at moderate power supply voltage with high output swing and low power consumption. The results obtained are compared with MOSFET designs and with other TFET based amplifiers found in the literature.
publishDate 2019
dc.date.none.fl_str_mv 2019-10-14
2021-06-25T10:22:49Z
2021-06-25T10:22:49Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1109/S3S46989.2019.9320637
2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019.
http://hdl.handle.net/11449/205885
10.1109/S3S46989.2019.9320637
2-s2.0-85100867443
url http://dx.doi.org/10.1109/S3S46989.2019.9320637
http://hdl.handle.net/11449/205885
identifier_str_mv 2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019.
10.1109/S3S46989.2019.9320637
2-s2.0-85100867443
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
_version_ 1803046394177519616

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