Two-stage amplifier design based on experimental Line-Tunnel FET data
Autor(a) principal: | |
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Data de Publicação: | 2019 |
Outros Autores: | , , , , , , |
Tipo de documento: | Artigo de conferência |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1109/S3S46989.2019.9320637 http://hdl.handle.net/11449/205885 |
Resumo: | This work presents for the first time a two-stage operational transconductance amplifier (OTA) design based on experimental Line-TFET devices. To account for different parasitic effects, make the project more feasible and avoid complicated and inaccurate analytical modelling, experimental devices are measured and the data is used in lookup tables to be coded in Verilog-A hardware description language. A two-stage amplifier is designed considering the particularities of these devices and the figures of merit achieved are related to its characteristics, including the non-idealities verified in the experimental characterization. The designed amplifier exhibits extremely high open loop voltage gain, good performance and bandwidth when compared with other TFET designs, at moderate power supply voltage with high output swing and low power consumption. The results obtained are compared with MOSFET designs and with other TFET based amplifiers found in the literature. |
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Repositório Institucional da UNESP |
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Two-stage amplifier design based on experimental Line-Tunnel FET dataanalog circuit designLine-TFETtwo-stage amplifierThis work presents for the first time a two-stage operational transconductance amplifier (OTA) design based on experimental Line-TFET devices. To account for different parasitic effects, make the project more feasible and avoid complicated and inaccurate analytical modelling, experimental devices are measured and the data is used in lookup tables to be coded in Verilog-A hardware description language. A two-stage amplifier is designed considering the particularities of these devices and the figures of merit achieved are related to its characteristics, including the non-idealities verified in the experimental characterization. The designed amplifier exhibits extremely high open loop voltage gain, good performance and bandwidth when compared with other TFET designs, at moderate power supply voltage with high output swing and low power consumption. The results obtained are compared with MOSFET designs and with other TFET based amplifiers found in the literature.LSI/PSI/USP University of Sao PauloUnesp Sao Paulo State UniversityImecClaRooE.E. Dept Ku LeuvenUnesp Sao Paulo State UniversityUniversidade de São Paulo (USP)Universidade Estadual Paulista (Unesp)ImecClaRooKu LeuvenFilho, Walter GonçalezMartino, Joao A.Rangel, RobertoAgopian, Paula G. D. [UNESP]Simoen, EddyRooyackers, RitaClaeys, CorCollaert, Nadine2021-06-25T10:22:49Z2021-06-25T10:22:49Z2019-10-14info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObjecthttp://dx.doi.org/10.1109/S3S46989.2019.93206372019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019.http://hdl.handle.net/11449/20588510.1109/S3S46989.2019.93206372-s2.0-85100867443Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPeng2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019info:eu-repo/semantics/openAccess2021-10-22T19:44:49Zoai:repositorio.unesp.br:11449/205885Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T17:13:22.330208Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Two-stage amplifier design based on experimental Line-Tunnel FET data |
title |
Two-stage amplifier design based on experimental Line-Tunnel FET data |
spellingShingle |
Two-stage amplifier design based on experimental Line-Tunnel FET data Filho, Walter Gonçalez analog circuit design Line-TFET two-stage amplifier |
title_short |
Two-stage amplifier design based on experimental Line-Tunnel FET data |
title_full |
Two-stage amplifier design based on experimental Line-Tunnel FET data |
title_fullStr |
Two-stage amplifier design based on experimental Line-Tunnel FET data |
title_full_unstemmed |
Two-stage amplifier design based on experimental Line-Tunnel FET data |
title_sort |
Two-stage amplifier design based on experimental Line-Tunnel FET data |
author |
Filho, Walter Gonçalez |
author_facet |
Filho, Walter Gonçalez Martino, Joao A. Rangel, Roberto Agopian, Paula G. D. [UNESP] Simoen, Eddy Rooyackers, Rita Claeys, Cor Collaert, Nadine |
author_role |
author |
author2 |
Martino, Joao A. Rangel, Roberto Agopian, Paula G. D. [UNESP] Simoen, Eddy Rooyackers, Rita Claeys, Cor Collaert, Nadine |
author2_role |
author author author author author author author |
dc.contributor.none.fl_str_mv |
Universidade de São Paulo (USP) Universidade Estadual Paulista (Unesp) Imec ClaRoo Ku Leuven |
dc.contributor.author.fl_str_mv |
Filho, Walter Gonçalez Martino, Joao A. Rangel, Roberto Agopian, Paula G. D. [UNESP] Simoen, Eddy Rooyackers, Rita Claeys, Cor Collaert, Nadine |
dc.subject.por.fl_str_mv |
analog circuit design Line-TFET two-stage amplifier |
topic |
analog circuit design Line-TFET two-stage amplifier |
description |
This work presents for the first time a two-stage operational transconductance amplifier (OTA) design based on experimental Line-TFET devices. To account for different parasitic effects, make the project more feasible and avoid complicated and inaccurate analytical modelling, experimental devices are measured and the data is used in lookup tables to be coded in Verilog-A hardware description language. A two-stage amplifier is designed considering the particularities of these devices and the figures of merit achieved are related to its characteristics, including the non-idealities verified in the experimental characterization. The designed amplifier exhibits extremely high open loop voltage gain, good performance and bandwidth when compared with other TFET designs, at moderate power supply voltage with high output swing and low power consumption. The results obtained are compared with MOSFET designs and with other TFET based amplifiers found in the literature. |
publishDate |
2019 |
dc.date.none.fl_str_mv |
2019-10-14 2021-06-25T10:22:49Z 2021-06-25T10:22:49Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/conferenceObject |
format |
conferenceObject |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1109/S3S46989.2019.9320637 2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019. http://hdl.handle.net/11449/205885 10.1109/S3S46989.2019.9320637 2-s2.0-85100867443 |
url |
http://dx.doi.org/10.1109/S3S46989.2019.9320637 http://hdl.handle.net/11449/205885 |
identifier_str_mv |
2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019. 10.1109/S3S46989.2019.9320637 2-s2.0-85100867443 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2019 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808128775360086016 |