On the nucleation of GaP/GaAs and the effect of buried stress fields
| Autor(a) principal: | |
|---|---|
| Data de Publicação: | 2006 |
| Outros Autores: | , , , , , , |
| Tipo de documento: | Artigo de conferência |
| Idioma: | eng |
| Título da fonte: | Repositório Institucional da UNESP |
| Texto Completo: | http://hdl.handle.net/11449/197373 |
Resumo: | We have recently shown that spatial ordering for epitaxially grown InP dots can be obtained using the periodic stress field of compositional modulation on the InGaP buffer layer. The aim of this present work is to study the growth of films of GaP by Chemical Beam Epitaxy (CBE), with in-situ monitoring by Reflection High Energy Electron Diffraction (RHEED), on layers of unstressed and stressed GaAs. Complementary, we have studied the role of a buried InP dot array on GaP nucleation in order to obtain three-dimensional structures. In both cases, the topographical characteristics of the samples were investigated by Atomic Force Microscopy (AFM) in non-contact mode. Thus vertically-coupled quantum dots of different materials have been obtained keeping the in-place spatial ordering originated from the composition modulation. |
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Repositório Institucional da UNESP |
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On the nucleation of GaP/GaAs and the effect of buried stress fieldsWe have recently shown that spatial ordering for epitaxially grown InP dots can be obtained using the periodic stress field of compositional modulation on the InGaP buffer layer. The aim of this present work is to study the growth of films of GaP by Chemical Beam Epitaxy (CBE), with in-situ monitoring by Reflection High Energy Electron Diffraction (RHEED), on layers of unstressed and stressed GaAs. Complementary, we have studied the role of a buried InP dot array on GaP nucleation in order to obtain three-dimensional structures. In both cases, the topographical characteristics of the samples were investigated by Atomic Force Microscopy (AFM) in non-contact mode. Thus vertically-coupled quantum dots of different materials have been obtained keeping the in-place spatial ordering originated from the composition modulation.Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Univ Estadual Campinas, Inst Fis Gleb Wataghin, DFA, LPD, CP 6165, BR-13081790 Campinas, SP, BrazilLab Nacl Luz Sincroton, BR-13084971 Campinas, SP, BrazilGPM UNESP, LaPTec, BR-18085180 Sorocaba, SP, BrazilGPM UNESP, LaPTec, BR-18085180 Sorocaba, SP, BrazilMaterials Research SocUniversidade Estadual de Campinas (UNICAMP)Lab Nacl Luz SincrotonUniversidade Estadual Paulista (Unesp)Zelcovit, J. G.Bortoleto, J. R. R. [UNESP]Bettini, J.Cotta, M. A.Olafsen, L. J.Biefeld, R. M.Wanke, M. C.Saxler, A. W.2020-12-10T22:01:17Z2020-12-10T22:01:17Z2006-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject133-+Progress In Semiconductor Materials V-novel Materials And Electronic And Optoelectronic Applications. Warrendale: Materials Research Soc, v. 891, p. 133-+, 2006.0272-9172http://hdl.handle.net/11449/197373WOS:000239521000019Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengProgress In Semiconductor Materials V-novel Materials And Electronic And Optoelectronic Applicationsinfo:eu-repo/semantics/openAccess2021-10-23T10:18:26Zoai:repositorio.unesp.br:11449/197373Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462021-10-23T10:18:26Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
| dc.title.none.fl_str_mv |
On the nucleation of GaP/GaAs and the effect of buried stress fields |
| title |
On the nucleation of GaP/GaAs and the effect of buried stress fields |
| spellingShingle |
On the nucleation of GaP/GaAs and the effect of buried stress fields Zelcovit, J. G. |
| title_short |
On the nucleation of GaP/GaAs and the effect of buried stress fields |
| title_full |
On the nucleation of GaP/GaAs and the effect of buried stress fields |
| title_fullStr |
On the nucleation of GaP/GaAs and the effect of buried stress fields |
| title_full_unstemmed |
On the nucleation of GaP/GaAs and the effect of buried stress fields |
| title_sort |
On the nucleation of GaP/GaAs and the effect of buried stress fields |
| author |
Zelcovit, J. G. |
| author_facet |
Zelcovit, J. G. Bortoleto, J. R. R. [UNESP] Bettini, J. Cotta, M. A. Olafsen, L. J. Biefeld, R. M. Wanke, M. C. Saxler, A. W. |
| author_role |
author |
| author2 |
Bortoleto, J. R. R. [UNESP] Bettini, J. Cotta, M. A. Olafsen, L. J. Biefeld, R. M. Wanke, M. C. Saxler, A. W. |
| author2_role |
author author author author author author author |
| dc.contributor.none.fl_str_mv |
Universidade Estadual de Campinas (UNICAMP) Lab Nacl Luz Sincroton Universidade Estadual Paulista (Unesp) |
| dc.contributor.author.fl_str_mv |
Zelcovit, J. G. Bortoleto, J. R. R. [UNESP] Bettini, J. Cotta, M. A. Olafsen, L. J. Biefeld, R. M. Wanke, M. C. Saxler, A. W. |
| description |
We have recently shown that spatial ordering for epitaxially grown InP dots can be obtained using the periodic stress field of compositional modulation on the InGaP buffer layer. The aim of this present work is to study the growth of films of GaP by Chemical Beam Epitaxy (CBE), with in-situ monitoring by Reflection High Energy Electron Diffraction (RHEED), on layers of unstressed and stressed GaAs. Complementary, we have studied the role of a buried InP dot array on GaP nucleation in order to obtain three-dimensional structures. In both cases, the topographical characteristics of the samples were investigated by Atomic Force Microscopy (AFM) in non-contact mode. Thus vertically-coupled quantum dots of different materials have been obtained keeping the in-place spatial ordering originated from the composition modulation. |
| publishDate |
2006 |
| dc.date.none.fl_str_mv |
2006-01-01 2020-12-10T22:01:17Z 2020-12-10T22:01:17Z |
| dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
| dc.type.driver.fl_str_mv |
info:eu-repo/semantics/conferenceObject |
| format |
conferenceObject |
| status_str |
publishedVersion |
| dc.identifier.uri.fl_str_mv |
Progress In Semiconductor Materials V-novel Materials And Electronic And Optoelectronic Applications. Warrendale: Materials Research Soc, v. 891, p. 133-+, 2006. 0272-9172 http://hdl.handle.net/11449/197373 WOS:000239521000019 |
| identifier_str_mv |
Progress In Semiconductor Materials V-novel Materials And Electronic And Optoelectronic Applications. Warrendale: Materials Research Soc, v. 891, p. 133-+, 2006. 0272-9172 WOS:000239521000019 |
| url |
http://hdl.handle.net/11449/197373 |
| dc.language.iso.fl_str_mv |
eng |
| language |
eng |
| dc.relation.none.fl_str_mv |
Progress In Semiconductor Materials V-novel Materials And Electronic And Optoelectronic Applications |
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info:eu-repo/semantics/openAccess |
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openAccess |
| dc.format.none.fl_str_mv |
133-+ |
| dc.publisher.none.fl_str_mv |
Materials Research Soc |
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Materials Research Soc |
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Web of Science reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
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Universidade Estadual Paulista (UNESP) |
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UNESP |
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UNESP |
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Repositório Institucional da UNESP |
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Repositório Institucional da UNESP |
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Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
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|
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1803046417235705856 |