On the nucleation of GaP/GaAs and the effect of buried stress fields

Detalhes bibliográficos
Autor(a) principal: Zelcovit, J. G.
Data de Publicação: 2006
Outros Autores: Bortoleto, J. R R [UNESP], Bettini, J., Cotta, M. A.
Tipo de documento: Artigo de conferência
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1557/PROC-0891-EE03-15
http://hdl.handle.net/11449/69042
Resumo: We have recently shown that spatial ordering for epitaxially grown InP dots can be obtained using the periodic stress field of compositional modulation on the InGaP buffer layer. The aim of this present work is to study the growth of films of GaP by Chemical Beam Epitaxy (CBE), with in-situ monitoring by Reflection High Energy Electron Diffraction (RHEED), on layers of unstressed and stressed GaAs. Complementary, we have studied the role of a buried InP dot array on GaP nucleation in order to obtain three-dimensional structures. In both cases, the topographical characteristics of the samples were investigated by Atomic Force Microscopy (AFM) in non-contact mode. Thus vertically-coupled quantum dots of different materials have been obtained keeping the in-place spatial ordering originated from the composition modulation. © 2006 Materials Research Society.
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spelling On the nucleation of GaP/GaAs and the effect of buried stress fieldsChemical beam epitaxyEpitaxial growthNucleationReflection high energy electron diffractionSemiconductor quantum dotsStress analysisSurface topographyCompositional modulationIn-situ monitoringPeriodic stressVertically-coupled quantum dotsSemiconducting gallium arsenideWe have recently shown that spatial ordering for epitaxially grown InP dots can be obtained using the periodic stress field of compositional modulation on the InGaP buffer layer. The aim of this present work is to study the growth of films of GaP by Chemical Beam Epitaxy (CBE), with in-situ monitoring by Reflection High Energy Electron Diffraction (RHEED), on layers of unstressed and stressed GaAs. Complementary, we have studied the role of a buried InP dot array on GaP nucleation in order to obtain three-dimensional structures. In both cases, the topographical characteristics of the samples were investigated by Atomic Force Microscopy (AFM) in non-contact mode. Thus vertically-coupled quantum dots of different materials have been obtained keeping the in-place spatial ordering originated from the composition modulation. © 2006 Materials Research Society.Instituto de Física Gleb Wataghin DFA/LPD UNICAMP, CP6165, 13081-790, Campinas-SPLaboratório Nacional de Luz Sincrotron, CP 6192, 13084-971, Campinas-SPLaPTec GPM-UNESP, Av. 3 de Março, 511, 18085-180, Sorocaba-SPLaPTec GPM-UNESP, Av. 3 de Março, 511, 18085-180, Sorocaba-SPUniversidade Estadual de Campinas (UNICAMP)Laboratório Nacional de Luz SincrotronUniversidade Estadual Paulista (Unesp)Zelcovit, J. G.Bortoleto, J. R R [UNESP]Bettini, J.Cotta, M. A.2014-05-27T11:21:57Z2014-05-27T11:21:57Z2006-08-23info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject133-138http://dx.doi.org/10.1557/PROC-0891-EE03-15Materials Research Society Symposium Proceedings, v. 891, p. 133-138.0272-9172http://hdl.handle.net/11449/6904210.1557/PROC-0891-EE03-152-s2.0-33747335199Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengMaterials Research Society Symposium Proceedings0,139info:eu-repo/semantics/openAccess2021-10-23T21:44:09Zoai:repositorio.unesp.br:11449/69042Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-05-23T20:10:57.795902Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv On the nucleation of GaP/GaAs and the effect of buried stress fields
title On the nucleation of GaP/GaAs and the effect of buried stress fields
spellingShingle On the nucleation of GaP/GaAs and the effect of buried stress fields
Zelcovit, J. G.
Chemical beam epitaxy
Epitaxial growth
Nucleation
Reflection high energy electron diffraction
Semiconductor quantum dots
Stress analysis
Surface topography
Compositional modulation
In-situ monitoring
Periodic stress
Vertically-coupled quantum dots
Semiconducting gallium arsenide
title_short On the nucleation of GaP/GaAs and the effect of buried stress fields
title_full On the nucleation of GaP/GaAs and the effect of buried stress fields
title_fullStr On the nucleation of GaP/GaAs and the effect of buried stress fields
title_full_unstemmed On the nucleation of GaP/GaAs and the effect of buried stress fields
title_sort On the nucleation of GaP/GaAs and the effect of buried stress fields
author Zelcovit, J. G.
author_facet Zelcovit, J. G.
Bortoleto, J. R R [UNESP]
Bettini, J.
Cotta, M. A.
author_role author
author2 Bortoleto, J. R R [UNESP]
Bettini, J.
Cotta, M. A.
author2_role author
author
author
dc.contributor.none.fl_str_mv Universidade Estadual de Campinas (UNICAMP)
Laboratório Nacional de Luz Sincrotron
Universidade Estadual Paulista (Unesp)
dc.contributor.author.fl_str_mv Zelcovit, J. G.
Bortoleto, J. R R [UNESP]
Bettini, J.
Cotta, M. A.
dc.subject.por.fl_str_mv Chemical beam epitaxy
Epitaxial growth
Nucleation
Reflection high energy electron diffraction
Semiconductor quantum dots
Stress analysis
Surface topography
Compositional modulation
In-situ monitoring
Periodic stress
Vertically-coupled quantum dots
Semiconducting gallium arsenide
topic Chemical beam epitaxy
Epitaxial growth
Nucleation
Reflection high energy electron diffraction
Semiconductor quantum dots
Stress analysis
Surface topography
Compositional modulation
In-situ monitoring
Periodic stress
Vertically-coupled quantum dots
Semiconducting gallium arsenide
description We have recently shown that spatial ordering for epitaxially grown InP dots can be obtained using the periodic stress field of compositional modulation on the InGaP buffer layer. The aim of this present work is to study the growth of films of GaP by Chemical Beam Epitaxy (CBE), with in-situ monitoring by Reflection High Energy Electron Diffraction (RHEED), on layers of unstressed and stressed GaAs. Complementary, we have studied the role of a buried InP dot array on GaP nucleation in order to obtain three-dimensional structures. In both cases, the topographical characteristics of the samples were investigated by Atomic Force Microscopy (AFM) in non-contact mode. Thus vertically-coupled quantum dots of different materials have been obtained keeping the in-place spatial ordering originated from the composition modulation. © 2006 Materials Research Society.
publishDate 2006
dc.date.none.fl_str_mv 2006-08-23
2014-05-27T11:21:57Z
2014-05-27T11:21:57Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1557/PROC-0891-EE03-15
Materials Research Society Symposium Proceedings, v. 891, p. 133-138.
0272-9172
http://hdl.handle.net/11449/69042
10.1557/PROC-0891-EE03-15
2-s2.0-33747335199
url http://dx.doi.org/10.1557/PROC-0891-EE03-15
http://hdl.handle.net/11449/69042
identifier_str_mv Materials Research Society Symposium Proceedings, v. 891, p. 133-138.
0272-9172
10.1557/PROC-0891-EE03-15
2-s2.0-33747335199
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Materials Research Society Symposium Proceedings
0,139
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 133-138
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
_version_ 1803045654566535168

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