Proton-irradiation influence on current mirror circuit using verilog-a approach based on experimental SOI FinFET characteristics

Detalhes bibliográficos
Autor(a) principal: De Sousa, Bruna Ramos
Data de Publicação: 2020
Outros Autores: Agopian, Paula Ghedini Der [UNESP], Martino, Joao Antonio
Tipo de documento: Artigo de conferência
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1149/09705.0171ecst
http://hdl.handle.net/11449/198924
Resumo: In this work, a simple methodology is proposed to simulate the current mirror circuit based on the triple-gate SOI FinFET experimental data, called lookup table in Verilog-A. It was analyzed the reliability of the model, comparing between experimental and simulated data, with has proven to be reliable. It was also evaluated the performance of the transistor and as well the circuit regarding the efficiency and the gain, for p- and n-types, based on three different fin widths, before and after proton-irradiation.
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spelling Proton-irradiation influence on current mirror circuit using verilog-a approach based on experimental SOI FinFET characteristicsIn this work, a simple methodology is proposed to simulate the current mirror circuit based on the triple-gate SOI FinFET experimental data, called lookup table in Verilog-A. It was analyzed the reliability of the model, comparing between experimental and simulated data, with has proven to be reliable. It was also evaluated the performance of the transistor and as well the circuit regarding the efficiency and the gain, for p- and n-types, based on three different fin widths, before and after proton-irradiation.Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)LSI/PSI/USP University of Sao PauloUNESP Sao Paulo State UniversityUNESP Sao Paulo State UniversityUniversidade de São Paulo (USP)Universidade Estadual Paulista (Unesp)De Sousa, Bruna RamosAgopian, Paula Ghedini Der [UNESP]Martino, Joao Antonio2020-12-12T01:25:42Z2020-12-12T01:25:42Z2020-04-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject171-177http://dx.doi.org/10.1149/09705.0171ecstECS Transactions, v. 97, n. 5, p. 171-177, 2020.1938-58621938-6737http://hdl.handle.net/11449/19892410.1149/09705.0171ecst2-s2.0-8508586571004969095954656960000-0002-0886-7798Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengECS Transactionsinfo:eu-repo/semantics/openAccess2021-10-23T10:02:14Zoai:repositorio.unesp.br:11449/198924Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T22:15:28.475354Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Proton-irradiation influence on current mirror circuit using verilog-a approach based on experimental SOI FinFET characteristics
title Proton-irradiation influence on current mirror circuit using verilog-a approach based on experimental SOI FinFET characteristics
spellingShingle Proton-irradiation influence on current mirror circuit using verilog-a approach based on experimental SOI FinFET characteristics
De Sousa, Bruna Ramos
title_short Proton-irradiation influence on current mirror circuit using verilog-a approach based on experimental SOI FinFET characteristics
title_full Proton-irradiation influence on current mirror circuit using verilog-a approach based on experimental SOI FinFET characteristics
title_fullStr Proton-irradiation influence on current mirror circuit using verilog-a approach based on experimental SOI FinFET characteristics
title_full_unstemmed Proton-irradiation influence on current mirror circuit using verilog-a approach based on experimental SOI FinFET characteristics
title_sort Proton-irradiation influence on current mirror circuit using verilog-a approach based on experimental SOI FinFET characteristics
author De Sousa, Bruna Ramos
author_facet De Sousa, Bruna Ramos
Agopian, Paula Ghedini Der [UNESP]
Martino, Joao Antonio
author_role author
author2 Agopian, Paula Ghedini Der [UNESP]
Martino, Joao Antonio
author2_role author
author
dc.contributor.none.fl_str_mv Universidade de São Paulo (USP)
Universidade Estadual Paulista (Unesp)
dc.contributor.author.fl_str_mv De Sousa, Bruna Ramos
Agopian, Paula Ghedini Der [UNESP]
Martino, Joao Antonio
description In this work, a simple methodology is proposed to simulate the current mirror circuit based on the triple-gate SOI FinFET experimental data, called lookup table in Verilog-A. It was analyzed the reliability of the model, comparing between experimental and simulated data, with has proven to be reliable. It was also evaluated the performance of the transistor and as well the circuit regarding the efficiency and the gain, for p- and n-types, based on three different fin widths, before and after proton-irradiation.
publishDate 2020
dc.date.none.fl_str_mv 2020-12-12T01:25:42Z
2020-12-12T01:25:42Z
2020-04-01
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1149/09705.0171ecst
ECS Transactions, v. 97, n. 5, p. 171-177, 2020.
1938-5862
1938-6737
http://hdl.handle.net/11449/198924
10.1149/09705.0171ecst
2-s2.0-85085865710
0496909595465696
0000-0002-0886-7798
url http://dx.doi.org/10.1149/09705.0171ecst
http://hdl.handle.net/11449/198924
identifier_str_mv ECS Transactions, v. 97, n. 5, p. 171-177, 2020.
1938-5862
1938-6737
10.1149/09705.0171ecst
2-s2.0-85085865710
0496909595465696
0000-0002-0886-7798
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv ECS Transactions
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 171-177
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
_version_ 1808129409647902720

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