Low temperature performance of proton irradiated strained SOI FinFET
Autor(a) principal: | |
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Data de Publicação: | 2017 |
Outros Autores: | , , , , , , |
Tipo de documento: | Artigo de conferência |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://hdl.handle.net/11449/160097 |
Resumo: | This paper studies for the first time the low temperature characteristics of strained SOI FinFETs submitted to proton irradiation. Both types of transistors, nMOS and pMOS, were analyzed from room temperature down to 100K, focusing on the threshold voltage (V-TH), subthreshold swing (SS), the Early voltage V-EA and the intrinsic gain voltage (A(V)). The effects of strain techniques are also studied. The p-channel devices showed a greater immunity to radiation when looking at their digital parameters while nFinFETs had a better response to proton radiation from an analog parameters point of view. |
id |
UNSP_92ad5e7974b1bafa3ddd8f6eaa6c2bcb |
---|---|
oai_identifier_str |
oai:repositorio.unesp.br:11449/160097 |
network_acronym_str |
UNSP |
network_name_str |
Repositório Institucional da UNESP |
repository_id_str |
2946 |
spelling |
Low temperature performance of proton irradiated strained SOI FinFETFinFETlow temperatureproton radiationstrained devicesThis paper studies for the first time the low temperature characteristics of strained SOI FinFETs submitted to proton irradiation. Both types of transistors, nMOS and pMOS, were analyzed from room temperature down to 100K, focusing on the threshold voltage (V-TH), subthreshold swing (SS), the Early voltage V-EA and the intrinsic gain voltage (A(V)). The effects of strain techniques are also studied. The p-channel devices showed a greater immunity to radiation when looking at their digital parameters while nFinFETs had a better response to proton radiation from an analog parameters point of view.Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Univ Sao Paulo, LSI PSI USP, Sao Paulo, BrazilIMEC, Leuven, BelgiumKatholieke Univ Leuven, EE Dept, Leuven, BelgiumSao Paulo State Univ UNESP, Campus Sao Joao da Boa Vista, Sao Paulo, BrazilSao Paulo State Univ UNESP, Campus Sao Joao da Boa Vista, Sao Paulo, BrazilIeeeUniversidade de São Paulo (USP)IMECKatholieke Univ LeuvenUniversidade Estadual Paulista (Unesp)Caparroz, L. F. V.Bordallo, C. C. M.Martino, J. A.Simoen, E.Claeys, C.Agopian, P. G. D. [UNESP]Sarafis, P.Nassiopoulou, A. G.2018-11-26T15:47:28Z2018-11-26T15:47:28Z2017-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject61-632017 Joint International Eurosoi Workshop And International Conference On Ultimate Integration On Silicon (eurosoi-ulis 2017). New York: Ieee, p. 61-63, 2017.2330-5738http://hdl.handle.net/11449/160097WOS:00042521090001704969095954656960000-0002-0886-7798Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPeng2017 Joint International Eurosoi Workshop And International Conference On Ultimate Integration On Silicon (eurosoi-ulis 2017)info:eu-repo/semantics/openAccess2021-10-23T21:44:34Zoai:repositorio.unesp.br:11449/160097Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T21:10:47.651546Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Low temperature performance of proton irradiated strained SOI FinFET |
title |
Low temperature performance of proton irradiated strained SOI FinFET |
spellingShingle |
Low temperature performance of proton irradiated strained SOI FinFET Caparroz, L. F. V. FinFET low temperature proton radiation strained devices |
title_short |
Low temperature performance of proton irradiated strained SOI FinFET |
title_full |
Low temperature performance of proton irradiated strained SOI FinFET |
title_fullStr |
Low temperature performance of proton irradiated strained SOI FinFET |
title_full_unstemmed |
Low temperature performance of proton irradiated strained SOI FinFET |
title_sort |
Low temperature performance of proton irradiated strained SOI FinFET |
author |
Caparroz, L. F. V. |
author_facet |
Caparroz, L. F. V. Bordallo, C. C. M. Martino, J. A. Simoen, E. Claeys, C. Agopian, P. G. D. [UNESP] Sarafis, P. Nassiopoulou, A. G. |
author_role |
author |
author2 |
Bordallo, C. C. M. Martino, J. A. Simoen, E. Claeys, C. Agopian, P. G. D. [UNESP] Sarafis, P. Nassiopoulou, A. G. |
author2_role |
author author author author author author author |
dc.contributor.none.fl_str_mv |
Universidade de São Paulo (USP) IMEC Katholieke Univ Leuven Universidade Estadual Paulista (Unesp) |
dc.contributor.author.fl_str_mv |
Caparroz, L. F. V. Bordallo, C. C. M. Martino, J. A. Simoen, E. Claeys, C. Agopian, P. G. D. [UNESP] Sarafis, P. Nassiopoulou, A. G. |
dc.subject.por.fl_str_mv |
FinFET low temperature proton radiation strained devices |
topic |
FinFET low temperature proton radiation strained devices |
description |
This paper studies for the first time the low temperature characteristics of strained SOI FinFETs submitted to proton irradiation. Both types of transistors, nMOS and pMOS, were analyzed from room temperature down to 100K, focusing on the threshold voltage (V-TH), subthreshold swing (SS), the Early voltage V-EA and the intrinsic gain voltage (A(V)). The effects of strain techniques are also studied. The p-channel devices showed a greater immunity to radiation when looking at their digital parameters while nFinFETs had a better response to proton radiation from an analog parameters point of view. |
publishDate |
2017 |
dc.date.none.fl_str_mv |
2017-01-01 2018-11-26T15:47:28Z 2018-11-26T15:47:28Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/conferenceObject |
format |
conferenceObject |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
2017 Joint International Eurosoi Workshop And International Conference On Ultimate Integration On Silicon (eurosoi-ulis 2017). New York: Ieee, p. 61-63, 2017. 2330-5738 http://hdl.handle.net/11449/160097 WOS:000425210900017 0496909595465696 0000-0002-0886-7798 |
identifier_str_mv |
2017 Joint International Eurosoi Workshop And International Conference On Ultimate Integration On Silicon (eurosoi-ulis 2017). New York: Ieee, p. 61-63, 2017. 2330-5738 WOS:000425210900017 0496909595465696 0000-0002-0886-7798 |
url |
http://hdl.handle.net/11449/160097 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
2017 Joint International Eurosoi Workshop And International Conference On Ultimate Integration On Silicon (eurosoi-ulis 2017) |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
61-63 |
dc.publisher.none.fl_str_mv |
Ieee |
publisher.none.fl_str_mv |
Ieee |
dc.source.none.fl_str_mv |
Web of Science reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808129294709293056 |