Gold nanoparticles functionalized with 4,4’-dithiobiphenyl blended with CuS in PMMA for switching memory devices

Detalhes bibliográficos
Autor(a) principal: Cerra, Sara
Data de Publicação: 2020
Outros Autores: Pica, Paride, Congiu, Mirko [UNESP], Boratto, M. H. [UNESP], Graeff, C. F.O. [UNESP], Fratoddi, Ilaria
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1007/s10854-020-03753-5
http://hdl.handle.net/11449/198979
Resumo: A switching memory device based on functionalized gold nanoparticles (AuNPs) and hexagonal copper sulfide nanocrystals (CuS), finely blended in polymethylmethacrylate matrix (PMMA), is herein presented. A two-electrode sandwich architecture has been implemented using aluminum top and bottom electrodes and a polymeric insulating layer based on PMMA/AuNPs/CuS. The device showed memory storage capabilities suitable for (Read Only Memory) ROM applications and behaves as a typical Write-Once, Read-Many-times (WORM) device. The results obtained with the blend containing AuNPs and/or CuS were compared with pure PMMA. By a voltage ramp in the range ± 9 V, it was possible to permanently change the electrical resistance between the electrodes yielding an ON/OFF current ratio above 105 with long-term stability over the whole experiment duration (30 days).
id UNSP_592366645b77a1a1702cd64c8acb2170
oai_identifier_str oai:repositorio.unesp.br:11449/198979
network_acronym_str UNSP
network_name_str Repositório Institucional da UNESP
repository_id_str 2946
spelling Gold nanoparticles functionalized with 4,4’-dithiobiphenyl blended with CuS in PMMA for switching memory devicesA switching memory device based on functionalized gold nanoparticles (AuNPs) and hexagonal copper sulfide nanocrystals (CuS), finely blended in polymethylmethacrylate matrix (PMMA), is herein presented. A two-electrode sandwich architecture has been implemented using aluminum top and bottom electrodes and a polymeric insulating layer based on PMMA/AuNPs/CuS. The device showed memory storage capabilities suitable for (Read Only Memory) ROM applications and behaves as a typical Write-Once, Read-Many-times (WORM) device. The results obtained with the blend containing AuNPs and/or CuS were compared with pure PMMA. By a voltage ramp in the range ± 9 V, it was possible to permanently change the electrical resistance between the electrodes yielding an ON/OFF current ratio above 105 with long-term stability over the whole experiment duration (30 days).Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Department of Chemistry University of Rome Sapienza, P.le A. Moro 5POSMAT – Post-Graduate Program in Materials Science and Technology School of Sciences UNESP – São Paulo State UniversityDepartment of Physics School of Sciences UNESP – São Paulo State UniversityPOSMAT – Post-Graduate Program in Materials Science and Technology School of Sciences UNESP – São Paulo State UniversityDepartment of Physics School of Sciences UNESP – São Paulo State UniversityCAPES: 024/2012FAPESP: 2013/07396-7FAPESP: 2016/17302-8FAPESP: 2017/20809-0University of Rome SapienzaUniversidade Estadual Paulista (Unesp)Cerra, SaraPica, ParideCongiu, Mirko [UNESP]Boratto, M. H. [UNESP]Graeff, C. F.O. [UNESP]Fratoddi, Ilaria2020-12-12T01:27:22Z2020-12-12T01:27:22Z2020-08-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/article12083-12088http://dx.doi.org/10.1007/s10854-020-03753-5Journal of Materials Science: Materials in Electronics, v. 31, n. 15, p. 12083-12088, 2020.1573-482X0957-4522http://hdl.handle.net/11449/19897910.1007/s10854-020-03753-52-s2.0-85086403461Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengJournal of Materials Science: Materials in Electronicsinfo:eu-repo/semantics/openAccess2021-10-22T21:54:15Zoai:repositorio.unesp.br:11449/198979Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T21:56:00.564912Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Gold nanoparticles functionalized with 4,4’-dithiobiphenyl blended with CuS in PMMA for switching memory devices
title Gold nanoparticles functionalized with 4,4’-dithiobiphenyl blended with CuS in PMMA for switching memory devices
spellingShingle Gold nanoparticles functionalized with 4,4’-dithiobiphenyl blended with CuS in PMMA for switching memory devices
Cerra, Sara
title_short Gold nanoparticles functionalized with 4,4’-dithiobiphenyl blended with CuS in PMMA for switching memory devices
title_full Gold nanoparticles functionalized with 4,4’-dithiobiphenyl blended with CuS in PMMA for switching memory devices
title_fullStr Gold nanoparticles functionalized with 4,4’-dithiobiphenyl blended with CuS in PMMA for switching memory devices
title_full_unstemmed Gold nanoparticles functionalized with 4,4’-dithiobiphenyl blended with CuS in PMMA for switching memory devices
title_sort Gold nanoparticles functionalized with 4,4’-dithiobiphenyl blended with CuS in PMMA for switching memory devices
author Cerra, Sara
author_facet Cerra, Sara
Pica, Paride
Congiu, Mirko [UNESP]
Boratto, M. H. [UNESP]
Graeff, C. F.O. [UNESP]
Fratoddi, Ilaria
author_role author
author2 Pica, Paride
Congiu, Mirko [UNESP]
Boratto, M. H. [UNESP]
Graeff, C. F.O. [UNESP]
Fratoddi, Ilaria
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv University of Rome Sapienza
Universidade Estadual Paulista (Unesp)
dc.contributor.author.fl_str_mv Cerra, Sara
Pica, Paride
Congiu, Mirko [UNESP]
Boratto, M. H. [UNESP]
Graeff, C. F.O. [UNESP]
Fratoddi, Ilaria
description A switching memory device based on functionalized gold nanoparticles (AuNPs) and hexagonal copper sulfide nanocrystals (CuS), finely blended in polymethylmethacrylate matrix (PMMA), is herein presented. A two-electrode sandwich architecture has been implemented using aluminum top and bottom electrodes and a polymeric insulating layer based on PMMA/AuNPs/CuS. The device showed memory storage capabilities suitable for (Read Only Memory) ROM applications and behaves as a typical Write-Once, Read-Many-times (WORM) device. The results obtained with the blend containing AuNPs and/or CuS were compared with pure PMMA. By a voltage ramp in the range ± 9 V, it was possible to permanently change the electrical resistance between the electrodes yielding an ON/OFF current ratio above 105 with long-term stability over the whole experiment duration (30 days).
publishDate 2020
dc.date.none.fl_str_mv 2020-12-12T01:27:22Z
2020-12-12T01:27:22Z
2020-08-01
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1007/s10854-020-03753-5
Journal of Materials Science: Materials in Electronics, v. 31, n. 15, p. 12083-12088, 2020.
1573-482X
0957-4522
http://hdl.handle.net/11449/198979
10.1007/s10854-020-03753-5
2-s2.0-85086403461
url http://dx.doi.org/10.1007/s10854-020-03753-5
http://hdl.handle.net/11449/198979
identifier_str_mv Journal of Materials Science: Materials in Electronics, v. 31, n. 15, p. 12083-12088, 2020.
1573-482X
0957-4522
10.1007/s10854-020-03753-5
2-s2.0-85086403461
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Journal of Materials Science: Materials in Electronics
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 12083-12088
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
_version_ 1808129374506975232

Registros relacionados