Impact of Positive Charges in a Fringing Field Bio-Tunnel-FET Device with Source Underlap
Autor(a) principal: | |
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Data de Publicação: | 2021 |
Outros Autores: | , , |
Tipo de documento: | Artigo de conferência |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1109/LAEDC51812.2021.9437937 http://hdl.handle.net/11449/245245 |
Resumo: | In this paper, the sensitivity of the fringing field ntype tunneling field-effect transistor biosensor (Bio-nTFET) was investigated over the influence of positive fixed charges density (QBio) and dielectric constant k, in the source underlap (LUS) region. Numerical simulations were performed using Sentaurus TCAD device simulator. The presence of different biomolecules, in the LUS region, affects the drain current of the on-state (IOn). It is shown that the sensitivity of the Bio-nTFET increases 3 orders of magnitude from k = 1 to k = 10 due to the improved fringing field that reduces the tunneling length resulting in a higher tunneling current. The sensibility also increases for a higher values of QBio. The highest sensitivity value obtained in this work was 6.103 A/A for Q(Bio) = 1.10(12) cm(-2) and k = 10. The proposed device shows great potential as a biosensor based on TFET devices. |
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Repositório Institucional da UNESP |
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Impact of Positive Charges in a Fringing Field Bio-Tunnel-FET Device with Source UnderlapBiosensorBio-TFETFringing FieldSource UnderlapSensitivityPermittivityIn this paper, the sensitivity of the fringing field ntype tunneling field-effect transistor biosensor (Bio-nTFET) was investigated over the influence of positive fixed charges density (QBio) and dielectric constant k, in the source underlap (LUS) region. Numerical simulations were performed using Sentaurus TCAD device simulator. The presence of different biomolecules, in the LUS region, affects the drain current of the on-state (IOn). It is shown that the sensitivity of the Bio-nTFET increases 3 orders of magnitude from k = 1 to k = 10 due to the improved fringing field that reduces the tunneling length resulting in a higher tunneling current. The sensibility also increases for a higher values of QBio. The highest sensitivity value obtained in this work was 6.103 A/A for Q(Bio) = 1.10(12) cm(-2) and k = 10. The proposed device shows great potential as a biosensor based on TFET devices.Fundação de Amparo de Pesquisa do Estado de São Paulo (FAPESP)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Coordenação de Aperfeiçoamento de Pessoa de Nível Superior (CAPES)Univ Sao Paulo, LSI PSI USP, Sao Paulo, BrazilSao Paulo State Univ, UNESP, Sao Joao Da Boa Vista, BrazilSao Paulo State Univ, UNESP, Sao Joao Da Boa Vista, BrazilIeeeUniversidade de São Paulo (USP)Universidade Estadual Paulista (UNESP)Macambira, Christian N.Agopian, Paula G. D. [UNESP]Martino, Joao A.IEEE2023-07-29T11:49:29Z2023-07-29T11:49:29Z2021-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject4http://dx.doi.org/10.1109/LAEDC51812.2021.94379372021 IEEE Latin America Electron Devices Conference (laedc). New York: IEEE, 4 p., 2021.http://hdl.handle.net/11449/24524510.1109/LAEDC51812.2021.9437937WOS:000948082600024Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPeng2021 Ieee Latin America Electron Devices Conference (laedc)info:eu-repo/semantics/openAccess2023-07-29T11:49:29Zoai:repositorio.unesp.br:11449/245245Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T16:45:15.528290Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Impact of Positive Charges in a Fringing Field Bio-Tunnel-FET Device with Source Underlap |
title |
Impact of Positive Charges in a Fringing Field Bio-Tunnel-FET Device with Source Underlap |
spellingShingle |
Impact of Positive Charges in a Fringing Field Bio-Tunnel-FET Device with Source Underlap Macambira, Christian N. Biosensor Bio-TFET Fringing Field Source Underlap Sensitivity Permittivity |
title_short |
Impact of Positive Charges in a Fringing Field Bio-Tunnel-FET Device with Source Underlap |
title_full |
Impact of Positive Charges in a Fringing Field Bio-Tunnel-FET Device with Source Underlap |
title_fullStr |
Impact of Positive Charges in a Fringing Field Bio-Tunnel-FET Device with Source Underlap |
title_full_unstemmed |
Impact of Positive Charges in a Fringing Field Bio-Tunnel-FET Device with Source Underlap |
title_sort |
Impact of Positive Charges in a Fringing Field Bio-Tunnel-FET Device with Source Underlap |
author |
Macambira, Christian N. |
author_facet |
Macambira, Christian N. Agopian, Paula G. D. [UNESP] Martino, Joao A. IEEE |
author_role |
author |
author2 |
Agopian, Paula G. D. [UNESP] Martino, Joao A. IEEE |
author2_role |
author author author |
dc.contributor.none.fl_str_mv |
Universidade de São Paulo (USP) Universidade Estadual Paulista (UNESP) |
dc.contributor.author.fl_str_mv |
Macambira, Christian N. Agopian, Paula G. D. [UNESP] Martino, Joao A. IEEE |
dc.subject.por.fl_str_mv |
Biosensor Bio-TFET Fringing Field Source Underlap Sensitivity Permittivity |
topic |
Biosensor Bio-TFET Fringing Field Source Underlap Sensitivity Permittivity |
description |
In this paper, the sensitivity of the fringing field ntype tunneling field-effect transistor biosensor (Bio-nTFET) was investigated over the influence of positive fixed charges density (QBio) and dielectric constant k, in the source underlap (LUS) region. Numerical simulations were performed using Sentaurus TCAD device simulator. The presence of different biomolecules, in the LUS region, affects the drain current of the on-state (IOn). It is shown that the sensitivity of the Bio-nTFET increases 3 orders of magnitude from k = 1 to k = 10 due to the improved fringing field that reduces the tunneling length resulting in a higher tunneling current. The sensibility also increases for a higher values of QBio. The highest sensitivity value obtained in this work was 6.103 A/A for Q(Bio) = 1.10(12) cm(-2) and k = 10. The proposed device shows great potential as a biosensor based on TFET devices. |
publishDate |
2021 |
dc.date.none.fl_str_mv |
2021-01-01 2023-07-29T11:49:29Z 2023-07-29T11:49:29Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/conferenceObject |
format |
conferenceObject |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1109/LAEDC51812.2021.9437937 2021 IEEE Latin America Electron Devices Conference (laedc). New York: IEEE, 4 p., 2021. http://hdl.handle.net/11449/245245 10.1109/LAEDC51812.2021.9437937 WOS:000948082600024 |
url |
http://dx.doi.org/10.1109/LAEDC51812.2021.9437937 http://hdl.handle.net/11449/245245 |
identifier_str_mv |
2021 IEEE Latin America Electron Devices Conference (laedc). New York: IEEE, 4 p., 2021. 10.1109/LAEDC51812.2021.9437937 WOS:000948082600024 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
2021 Ieee Latin America Electron Devices Conference (laedc) |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
4 |
dc.publisher.none.fl_str_mv |
Ieee |
publisher.none.fl_str_mv |
Ieee |
dc.source.none.fl_str_mv |
Web of Science reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808128695578132480 |