Modelling of the influence of the layer pollution thickness in high voltage polluted insulators

Detalhes bibliográficos
Autor(a) principal: do Prado, A. J. [UNESP]
Data de Publicação: 1995
Outros Autores: Astorga, O. A M [UNESP]
Tipo de documento: Artigo de conferência
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1109/ICSD.1995.523038
http://hdl.handle.net/11449/64674
Resumo: An experimental model and a mathematical model with the introduction of a ramp in the channel of Obenaus model are presented. The aim is to present a better reproduction of the real layer pollution deposited on the HV insulators. This better reproduction is obtained from two types of thickness variation: the introduction of a ramp (soft variation) and the introduction of a step (sudden variation). The computational simulations and the experimental data suggest that the introduction of the ramp is the better reproduction of the layer pollution. The ramp approximates to the real layer pollution more than the step.
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spelling Modelling of the influence of the layer pollution thickness in high voltage polluted insulatorsAlgorithmsApproximation theoryComputational methodsComputer simulationElectric dischargesElectric resistanceFlashoverGeometryMathematical modelsPollutionHigh voltage polluted insulatorsObenaus modelVoltage polarityElectric insulating materialsAn experimental model and a mathematical model with the introduction of a ramp in the channel of Obenaus model are presented. The aim is to present a better reproduction of the real layer pollution deposited on the HV insulators. This better reproduction is obtained from two types of thickness variation: the introduction of a ramp (soft variation) and the introduction of a step (sudden variation). The computational simulations and the experimental data suggest that the introduction of the ramp is the better reproduction of the layer pollution. The ramp approximates to the real layer pollution more than the step.FEIS/UNESP, Sao PauloFEIS/UNESP, Sao PauloUniversidade Estadual Paulista (Unesp)do Prado, A. J. [UNESP]Astorga, O. A M [UNESP]2014-05-27T11:18:02Z2014-05-27T11:18:02Z1995-12-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject508-512http://dx.doi.org/10.1109/ICSD.1995.523038IEEE International Conference on Conduction & Breakdown in Solid Dielectrics, p. 508-512.http://hdl.handle.net/11449/6467410.1109/ICSD.1995.523038WOS:A1995BD97L000992-s2.0-0029483857Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengIEEE International Conference on Conduction & Breakdown in Solid Dielectricsinfo:eu-repo/semantics/openAccess2021-10-23T21:37:50Zoai:repositorio.unesp.br:11449/64674Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T14:31:02.475317Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Modelling of the influence of the layer pollution thickness in high voltage polluted insulators
title Modelling of the influence of the layer pollution thickness in high voltage polluted insulators
spellingShingle Modelling of the influence of the layer pollution thickness in high voltage polluted insulators
do Prado, A. J. [UNESP]
Algorithms
Approximation theory
Computational methods
Computer simulation
Electric discharges
Electric resistance
Flashover
Geometry
Mathematical models
Pollution
High voltage polluted insulators
Obenaus model
Voltage polarity
Electric insulating materials
title_short Modelling of the influence of the layer pollution thickness in high voltage polluted insulators
title_full Modelling of the influence of the layer pollution thickness in high voltage polluted insulators
title_fullStr Modelling of the influence of the layer pollution thickness in high voltage polluted insulators
title_full_unstemmed Modelling of the influence of the layer pollution thickness in high voltage polluted insulators
title_sort Modelling of the influence of the layer pollution thickness in high voltage polluted insulators
author do Prado, A. J. [UNESP]
author_facet do Prado, A. J. [UNESP]
Astorga, O. A M [UNESP]
author_role author
author2 Astorga, O. A M [UNESP]
author2_role author
dc.contributor.none.fl_str_mv Universidade Estadual Paulista (Unesp)
dc.contributor.author.fl_str_mv do Prado, A. J. [UNESP]
Astorga, O. A M [UNESP]
dc.subject.por.fl_str_mv Algorithms
Approximation theory
Computational methods
Computer simulation
Electric discharges
Electric resistance
Flashover
Geometry
Mathematical models
Pollution
High voltage polluted insulators
Obenaus model
Voltage polarity
Electric insulating materials
topic Algorithms
Approximation theory
Computational methods
Computer simulation
Electric discharges
Electric resistance
Flashover
Geometry
Mathematical models
Pollution
High voltage polluted insulators
Obenaus model
Voltage polarity
Electric insulating materials
description An experimental model and a mathematical model with the introduction of a ramp in the channel of Obenaus model are presented. The aim is to present a better reproduction of the real layer pollution deposited on the HV insulators. This better reproduction is obtained from two types of thickness variation: the introduction of a ramp (soft variation) and the introduction of a step (sudden variation). The computational simulations and the experimental data suggest that the introduction of the ramp is the better reproduction of the layer pollution. The ramp approximates to the real layer pollution more than the step.
publishDate 1995
dc.date.none.fl_str_mv 1995-12-01
2014-05-27T11:18:02Z
2014-05-27T11:18:02Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1109/ICSD.1995.523038
IEEE International Conference on Conduction & Breakdown in Solid Dielectrics, p. 508-512.
http://hdl.handle.net/11449/64674
10.1109/ICSD.1995.523038
WOS:A1995BD97L00099
2-s2.0-0029483857
url http://dx.doi.org/10.1109/ICSD.1995.523038
http://hdl.handle.net/11449/64674
identifier_str_mv IEEE International Conference on Conduction & Breakdown in Solid Dielectrics, p. 508-512.
10.1109/ICSD.1995.523038
WOS:A1995BD97L00099
2-s2.0-0029483857
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv IEEE International Conference on Conduction & Breakdown in Solid Dielectrics
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 508-512
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
_version_ 1808128371895304192