Simple Analytical Modelling of an Electronically Tunable Potentiometer and Body Factor Influence

Detalhes bibliográficos
Autor(a) principal: Sousa, Julia C. S.
Data de Publicação: 2021
Outros Autores: Martino, Joao A., Agopian, Paula G. D. [UNESP], IEEE
Tipo de documento: Artigo de conferência
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1109/LAEDC51812.2021.9437909
http://hdl.handle.net/11449/245244
Resumo: This paper presents a simple analytical modelling of a Electronically Tunable Potentiometer (ETP) circuit, made of a pseudo-resistor pair and a feedback mechanism that keeps resistance invariant to common mode voltage. The modelling utilizes the first order quadratic equations for the MOS transistor. In order to validate the analytical model, a Verilog-A model was written using the same MOS equations, and later matched to the ibm 130nm technology node resulting in a satisfactory approximation, with relative errors within 15%. Analysis of the ETP control voltage, pseudo-resistor current and pseudo-resistor resistance using the simple model were performed as a function of body factor. When the body factor decreases (better gate to channel electrostatic coupling) the pseudo-resistance increases for the same silicon chip area.
id UNSP_71cb2177d716d31506ba3f280faa03a1
oai_identifier_str oai:repositorio.unesp.br:11449/245244
network_acronym_str UNSP
network_name_str Repositório Institucional da UNESP
repository_id_str 2946
spelling Simple Analytical Modelling of an Electronically Tunable Potentiometer and Body Factor InfluenceAnalytical ModelETPBody factorTechnological NodesThis paper presents a simple analytical modelling of a Electronically Tunable Potentiometer (ETP) circuit, made of a pseudo-resistor pair and a feedback mechanism that keeps resistance invariant to common mode voltage. The modelling utilizes the first order quadratic equations for the MOS transistor. In order to validate the analytical model, a Verilog-A model was written using the same MOS equations, and later matched to the ibm 130nm technology node resulting in a satisfactory approximation, with relative errors within 15%. Analysis of the ETP control voltage, pseudo-resistor current and pseudo-resistor resistance using the simple model were performed as a function of body factor. When the body factor decreases (better gate to channel electrostatic coupling) the pseudo-resistance increases for the same silicon chip area.Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Coordenação de Aperfeiçoamento de Pessoa de Nível Superior (CAPES)Univ Sao Paulo, LSI PSI USP, Sao Paulo, BrazilSao Paulo State Univ, UNESP, Sao Joao Da Boa Vista, BrazilSao Paulo State Univ, UNESP, Sao Joao Da Boa Vista, BrazilIeeeUniversidade de São Paulo (USP)Universidade Estadual Paulista (UNESP)Sousa, Julia C. S.Martino, Joao A.Agopian, Paula G. D. [UNESP]IEEE2023-07-29T11:49:22Z2023-07-29T11:49:22Z2021-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject4http://dx.doi.org/10.1109/LAEDC51812.2021.94379092021 IEEE Latin America Electron Devices Conference (laedc). New York: IEEE, 4 p., 2021.http://hdl.handle.net/11449/24524410.1109/LAEDC51812.2021.9437909WOS:000948082600003Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPeng2021 Ieee Latin America Electron Devices Conference (laedc)info:eu-repo/semantics/openAccess2023-07-29T11:49:22Zoai:repositorio.unesp.br:11449/245244Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462023-07-29T11:49:22Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Simple Analytical Modelling of an Electronically Tunable Potentiometer and Body Factor Influence
title Simple Analytical Modelling of an Electronically Tunable Potentiometer and Body Factor Influence
spellingShingle Simple Analytical Modelling of an Electronically Tunable Potentiometer and Body Factor Influence
Sousa, Julia C. S.
Analytical Model
ETP
Body factor
Technological Nodes
title_short Simple Analytical Modelling of an Electronically Tunable Potentiometer and Body Factor Influence
title_full Simple Analytical Modelling of an Electronically Tunable Potentiometer and Body Factor Influence
title_fullStr Simple Analytical Modelling of an Electronically Tunable Potentiometer and Body Factor Influence
title_full_unstemmed Simple Analytical Modelling of an Electronically Tunable Potentiometer and Body Factor Influence
title_sort Simple Analytical Modelling of an Electronically Tunable Potentiometer and Body Factor Influence
author Sousa, Julia C. S.
author_facet Sousa, Julia C. S.
Martino, Joao A.
Agopian, Paula G. D. [UNESP]
IEEE
author_role author
author2 Martino, Joao A.
Agopian, Paula G. D. [UNESP]
IEEE
author2_role author
author
author
dc.contributor.none.fl_str_mv Universidade de São Paulo (USP)
Universidade Estadual Paulista (UNESP)
dc.contributor.author.fl_str_mv Sousa, Julia C. S.
Martino, Joao A.
Agopian, Paula G. D. [UNESP]
IEEE
dc.subject.por.fl_str_mv Analytical Model
ETP
Body factor
Technological Nodes
topic Analytical Model
ETP
Body factor
Technological Nodes
description This paper presents a simple analytical modelling of a Electronically Tunable Potentiometer (ETP) circuit, made of a pseudo-resistor pair and a feedback mechanism that keeps resistance invariant to common mode voltage. The modelling utilizes the first order quadratic equations for the MOS transistor. In order to validate the analytical model, a Verilog-A model was written using the same MOS equations, and later matched to the ibm 130nm technology node resulting in a satisfactory approximation, with relative errors within 15%. Analysis of the ETP control voltage, pseudo-resistor current and pseudo-resistor resistance using the simple model were performed as a function of body factor. When the body factor decreases (better gate to channel electrostatic coupling) the pseudo-resistance increases for the same silicon chip area.
publishDate 2021
dc.date.none.fl_str_mv 2021-01-01
2023-07-29T11:49:22Z
2023-07-29T11:49:22Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1109/LAEDC51812.2021.9437909
2021 IEEE Latin America Electron Devices Conference (laedc). New York: IEEE, 4 p., 2021.
http://hdl.handle.net/11449/245244
10.1109/LAEDC51812.2021.9437909
WOS:000948082600003
url http://dx.doi.org/10.1109/LAEDC51812.2021.9437909
http://hdl.handle.net/11449/245244
identifier_str_mv 2021 IEEE Latin America Electron Devices Conference (laedc). New York: IEEE, 4 p., 2021.
10.1109/LAEDC51812.2021.9437909
WOS:000948082600003
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 2021 Ieee Latin America Electron Devices Conference (laedc)
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 4
dc.publisher.none.fl_str_mv Ieee
publisher.none.fl_str_mv Ieee
dc.source.none.fl_str_mv Web of Science
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
_version_ 1803046734521171968

Registros relacionados