Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling

Detalhes bibliográficos
Autor(a) principal: Araujo, Luana S.
Data de Publicação: 2014
Outros Autores: Berengue, Olivia [UNESP], Baldan, Maurício, Ferreira, Neidenei, Moro, Joaõ, Chiquito, Adenilson
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1557/opl.2014.701
http://hdl.handle.net/11449/220262
Resumo: Doped diamond films grown by chemical vapor techniques has been used to study hydrogen and oxygen terminated diamond. It is known that the electrical characteristics of metal-diamond interface are strongly affected by the diamond surface features. O2 plasma treatment was used as a cleaning procedure for as grown diamond samples leading to changes in the capacitance measurements after treatment. The alteration in the characteristics of the samples can be attributed to the surface adsorbates like hydrogen and water vapor present in the atmosphere. The results indicates that the O2 plasma treatment was effective in cleaning the surface revealing the expected features of a p-type diamond film.
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spelling Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profilingDiamondsurface reactionthin filmDoped diamond films grown by chemical vapor techniques has been used to study hydrogen and oxygen terminated diamond. It is known that the electrical characteristics of metal-diamond interface are strongly affected by the diamond surface features. O2 plasma treatment was used as a cleaning procedure for as grown diamond samples leading to changes in the capacitance measurements after treatment. The alteration in the characteristics of the samples can be attributed to the surface adsorbates like hydrogen and water vapor present in the atmosphere. The results indicates that the O2 plasma treatment was effective in cleaning the surface revealing the expected features of a p-type diamond film.NanO LaB-Departamento de Fisica Universidade Federal de Sao CarlosFaculdade de Engenharia de Guaratingueta Universidade Estadual Júlio de Mesquita FilhoLaboratorio Associado de Sensores e Materiais LAS/INPEInstituto Federal de Educacao Ciencia e Tecnologia de Sao PauloFaculdade de Engenharia de Guaratingueta Universidade Estadual Júlio de Mesquita FilhoUniversidade Federal de São Carlos (UFSCar)Universidade Estadual Paulista (UNESP)LAS/INPECiencia e Tecnologia de Sao PauloAraujo, Luana S.Berengue, Olivia [UNESP]Baldan, MaurícioFerreira, NeideneiMoro, JoaõChiquito, Adenilson2022-04-28T19:00:31Z2022-04-28T19:00:31Z2014-11-14info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articlehttp://dx.doi.org/10.1557/opl.2014.701International Review of the Red Cross, v. 1634, n. 1, 2014.1607-58891816-3831http://hdl.handle.net/11449/22026210.1557/opl.2014.7012-s2.0-84913618512Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengInternational Review of the Red Crossinfo:eu-repo/semantics/openAccess2022-04-28T19:00:31Zoai:repositorio.unesp.br:11449/220262Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462022-04-28T19:00:31Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling
title Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling
spellingShingle Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling
Araujo, Luana S.
Diamond
surface reaction
thin film
title_short Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling
title_full Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling
title_fullStr Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling
title_full_unstemmed Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling
title_sort Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling
author Araujo, Luana S.
author_facet Araujo, Luana S.
Berengue, Olivia [UNESP]
Baldan, Maurício
Ferreira, Neidenei
Moro, Joaõ
Chiquito, Adenilson
author_role author
author2 Berengue, Olivia [UNESP]
Baldan, Maurício
Ferreira, Neidenei
Moro, Joaõ
Chiquito, Adenilson
author2_role author
author
author
author
author
dc.contributor.none.fl_str_mv Universidade Federal de São Carlos (UFSCar)
Universidade Estadual Paulista (UNESP)
LAS/INPE
Ciencia e Tecnologia de Sao Paulo
dc.contributor.author.fl_str_mv Araujo, Luana S.
Berengue, Olivia [UNESP]
Baldan, Maurício
Ferreira, Neidenei
Moro, Joaõ
Chiquito, Adenilson
dc.subject.por.fl_str_mv Diamond
surface reaction
thin film
topic Diamond
surface reaction
thin film
description Doped diamond films grown by chemical vapor techniques has been used to study hydrogen and oxygen terminated diamond. It is known that the electrical characteristics of metal-diamond interface are strongly affected by the diamond surface features. O2 plasma treatment was used as a cleaning procedure for as grown diamond samples leading to changes in the capacitance measurements after treatment. The alteration in the characteristics of the samples can be attributed to the surface adsorbates like hydrogen and water vapor present in the atmosphere. The results indicates that the O2 plasma treatment was effective in cleaning the surface revealing the expected features of a p-type diamond film.
publishDate 2014
dc.date.none.fl_str_mv 2014-11-14
2022-04-28T19:00:31Z
2022-04-28T19:00:31Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1557/opl.2014.701
International Review of the Red Cross, v. 1634, n. 1, 2014.
1607-5889
1816-3831
http://hdl.handle.net/11449/220262
10.1557/opl.2014.701
2-s2.0-84913618512
url http://dx.doi.org/10.1557/opl.2014.701
http://hdl.handle.net/11449/220262
identifier_str_mv International Review of the Red Cross, v. 1634, n. 1, 2014.
1607-5889
1816-3831
10.1557/opl.2014.701
2-s2.0-84913618512
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv International Review of the Red Cross
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
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