Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling
Autor(a) principal: | |
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Data de Publicação: | 2014 |
Outros Autores: | , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1557/opl.2014.701 http://hdl.handle.net/11449/220262 |
Resumo: | Doped diamond films grown by chemical vapor techniques has been used to study hydrogen and oxygen terminated diamond. It is known that the electrical characteristics of metal-diamond interface are strongly affected by the diamond surface features. O2 plasma treatment was used as a cleaning procedure for as grown diamond samples leading to changes in the capacitance measurements after treatment. The alteration in the characteristics of the samples can be attributed to the surface adsorbates like hydrogen and water vapor present in the atmosphere. The results indicates that the O2 plasma treatment was effective in cleaning the surface revealing the expected features of a p-type diamond film. |
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Repositório Institucional da UNESP |
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2946 |
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Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profilingDiamondsurface reactionthin filmDoped diamond films grown by chemical vapor techniques has been used to study hydrogen and oxygen terminated diamond. It is known that the electrical characteristics of metal-diamond interface are strongly affected by the diamond surface features. O2 plasma treatment was used as a cleaning procedure for as grown diamond samples leading to changes in the capacitance measurements after treatment. The alteration in the characteristics of the samples can be attributed to the surface adsorbates like hydrogen and water vapor present in the atmosphere. The results indicates that the O2 plasma treatment was effective in cleaning the surface revealing the expected features of a p-type diamond film.NanO LaB-Departamento de Fisica Universidade Federal de Sao CarlosFaculdade de Engenharia de Guaratingueta Universidade Estadual Júlio de Mesquita FilhoLaboratorio Associado de Sensores e Materiais LAS/INPEInstituto Federal de Educacao Ciencia e Tecnologia de Sao PauloFaculdade de Engenharia de Guaratingueta Universidade Estadual Júlio de Mesquita FilhoUniversidade Federal de São Carlos (UFSCar)Universidade Estadual Paulista (UNESP)LAS/INPECiencia e Tecnologia de Sao PauloAraujo, Luana S.Berengue, Olivia [UNESP]Baldan, MaurícioFerreira, NeideneiMoro, JoaõChiquito, Adenilson2022-04-28T19:00:31Z2022-04-28T19:00:31Z2014-11-14info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articlehttp://dx.doi.org/10.1557/opl.2014.701International Review of the Red Cross, v. 1634, n. 1, 2014.1607-58891816-3831http://hdl.handle.net/11449/22026210.1557/opl.2014.7012-s2.0-84913618512Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengInternational Review of the Red Crossinfo:eu-repo/semantics/openAccess2022-04-28T19:00:31Zoai:repositorio.unesp.br:11449/220262Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T16:16:25.046153Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling |
title |
Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling |
spellingShingle |
Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling Araujo, Luana S. Diamond surface reaction thin film |
title_short |
Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling |
title_full |
Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling |
title_fullStr |
Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling |
title_full_unstemmed |
Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling |
title_sort |
Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling |
author |
Araujo, Luana S. |
author_facet |
Araujo, Luana S. Berengue, Olivia [UNESP] Baldan, Maurício Ferreira, Neidenei Moro, Joaõ Chiquito, Adenilson |
author_role |
author |
author2 |
Berengue, Olivia [UNESP] Baldan, Maurício Ferreira, Neidenei Moro, Joaõ Chiquito, Adenilson |
author2_role |
author author author author author |
dc.contributor.none.fl_str_mv |
Universidade Federal de São Carlos (UFSCar) Universidade Estadual Paulista (UNESP) LAS/INPE Ciencia e Tecnologia de Sao Paulo |
dc.contributor.author.fl_str_mv |
Araujo, Luana S. Berengue, Olivia [UNESP] Baldan, Maurício Ferreira, Neidenei Moro, Joaõ Chiquito, Adenilson |
dc.subject.por.fl_str_mv |
Diamond surface reaction thin film |
topic |
Diamond surface reaction thin film |
description |
Doped diamond films grown by chemical vapor techniques has been used to study hydrogen and oxygen terminated diamond. It is known that the electrical characteristics of metal-diamond interface are strongly affected by the diamond surface features. O2 plasma treatment was used as a cleaning procedure for as grown diamond samples leading to changes in the capacitance measurements after treatment. The alteration in the characteristics of the samples can be attributed to the surface adsorbates like hydrogen and water vapor present in the atmosphere. The results indicates that the O2 plasma treatment was effective in cleaning the surface revealing the expected features of a p-type diamond film. |
publishDate |
2014 |
dc.date.none.fl_str_mv |
2014-11-14 2022-04-28T19:00:31Z 2022-04-28T19:00:31Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1557/opl.2014.701 International Review of the Red Cross, v. 1634, n. 1, 2014. 1607-5889 1816-3831 http://hdl.handle.net/11449/220262 10.1557/opl.2014.701 2-s2.0-84913618512 |
url |
http://dx.doi.org/10.1557/opl.2014.701 http://hdl.handle.net/11449/220262 |
identifier_str_mv |
International Review of the Red Cross, v. 1634, n. 1, 2014. 1607-5889 1816-3831 10.1557/opl.2014.701 2-s2.0-84913618512 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
International Review of the Red Cross |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808128627034816512 |