Flashover phenomenon: an analysis with influence of the thickness of the layer pollution of the high voltage polluted insulators
Autor(a) principal: | |
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Data de Publicação: | 1994 |
Outros Autores: | |
Tipo de documento: | Artigo de conferência |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1109/ELINSL.1994.401397 http://hdl.handle.net/11449/130721 |
Resumo: | Results of the analysis of dynamic behavior of flashover phenomenon on the high voltage-polluted insulators are presented. These results were taken from a mathematical and an experimental model that introduce the variable thickness influence of the layer pollution deposited on the high-voltage insulator surface. Analysis of the flashover was done by way of introducing a variation in the thickness of the channel of Obenaus' model, simulating a layer pollution of variable thickness. The objective was to obtain a better reproduction of the real layer pollution deposited on the insulator that works in the polluted regions. Two types of thickness variations were used: a sudden variation, using a step; and a soft variation, using a ramp; that were put along the way of the discharge. Comparison between the mathematical and experimental models showed that introduction of a ramp makes Obenaus' model more efficient in analyzing behavior of flashover phenomenon. |
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Repositório Institucional da UNESP |
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Flashover phenomenon: an analysis with influence of the thickness of the layer pollution of the high voltage polluted insulatorsAlgorithmsComputer simulationElectric dischargesEquivalent circuitsGeometryMathematical modelsFlashover phenomenonHigh voltage polluted insulatorsObenaus modelRampStepVoltage polarityElectric insulatorsResults of the analysis of dynamic behavior of flashover phenomenon on the high voltage-polluted insulators are presented. These results were taken from a mathematical and an experimental model that introduce the variable thickness influence of the layer pollution deposited on the high-voltage insulator surface. Analysis of the flashover was done by way of introducing a variation in the thickness of the channel of Obenaus' model, simulating a layer pollution of variable thickness. The objective was to obtain a better reproduction of the real layer pollution deposited on the insulator that works in the polluted regions. Two types of thickness variations were used: a sudden variation, using a step; and a soft variation, using a ramp; that were put along the way of the discharge. Comparison between the mathematical and experimental models showed that introduction of a ramp makes Obenaus' model more efficient in analyzing behavior of flashover phenomenon.UNESP,FEIS,DEPT ENGN ELETR,BR-15378000 ILHA SOLTEIRA,SP,BRAZILUNESP,FEIS,DEPT ENGN ELETR,BR-15378000 ILHA SOLTEIRA,SP,BRAZILInstitute of Electrical and Electronics Engineers (IEEE)Universidade Estadual Paulista (Unesp)Astorga, Oscar Armando Maldonado [UNESP]do Prado, Afonso Jose [UNESP]2014-05-27T11:17:58Z2014-05-27T11:17:58Z1994-12-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject546-549http://dx.doi.org/10.1109/ELINSL.1994.401397Conference Record of IEEE International Symposium on Electrical Insulation, p. 546-549.0164-2006http://hdl.handle.net/11449/13072110.1109/ELINSL.1994.401397WOS:A1994BA96P001322-s2.0-0028564615Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengConference Record of IEEE International Symposium on Electrical Insulationinfo:eu-repo/semantics/openAccess2024-07-04T19:11:27Zoai:repositorio.unesp.br:11449/130721Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T16:02:01.513816Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Flashover phenomenon: an analysis with influence of the thickness of the layer pollution of the high voltage polluted insulators |
title |
Flashover phenomenon: an analysis with influence of the thickness of the layer pollution of the high voltage polluted insulators |
spellingShingle |
Flashover phenomenon: an analysis with influence of the thickness of the layer pollution of the high voltage polluted insulators Astorga, Oscar Armando Maldonado [UNESP] Algorithms Computer simulation Electric discharges Equivalent circuits Geometry Mathematical models Flashover phenomenon High voltage polluted insulators Obenaus model Ramp Step Voltage polarity Electric insulators |
title_short |
Flashover phenomenon: an analysis with influence of the thickness of the layer pollution of the high voltage polluted insulators |
title_full |
Flashover phenomenon: an analysis with influence of the thickness of the layer pollution of the high voltage polluted insulators |
title_fullStr |
Flashover phenomenon: an analysis with influence of the thickness of the layer pollution of the high voltage polluted insulators |
title_full_unstemmed |
Flashover phenomenon: an analysis with influence of the thickness of the layer pollution of the high voltage polluted insulators |
title_sort |
Flashover phenomenon: an analysis with influence of the thickness of the layer pollution of the high voltage polluted insulators |
author |
Astorga, Oscar Armando Maldonado [UNESP] |
author_facet |
Astorga, Oscar Armando Maldonado [UNESP] do Prado, Afonso Jose [UNESP] |
author_role |
author |
author2 |
do Prado, Afonso Jose [UNESP] |
author2_role |
author |
dc.contributor.none.fl_str_mv |
Universidade Estadual Paulista (Unesp) |
dc.contributor.author.fl_str_mv |
Astorga, Oscar Armando Maldonado [UNESP] do Prado, Afonso Jose [UNESP] |
dc.subject.por.fl_str_mv |
Algorithms Computer simulation Electric discharges Equivalent circuits Geometry Mathematical models Flashover phenomenon High voltage polluted insulators Obenaus model Ramp Step Voltage polarity Electric insulators |
topic |
Algorithms Computer simulation Electric discharges Equivalent circuits Geometry Mathematical models Flashover phenomenon High voltage polluted insulators Obenaus model Ramp Step Voltage polarity Electric insulators |
description |
Results of the analysis of dynamic behavior of flashover phenomenon on the high voltage-polluted insulators are presented. These results were taken from a mathematical and an experimental model that introduce the variable thickness influence of the layer pollution deposited on the high-voltage insulator surface. Analysis of the flashover was done by way of introducing a variation in the thickness of the channel of Obenaus' model, simulating a layer pollution of variable thickness. The objective was to obtain a better reproduction of the real layer pollution deposited on the insulator that works in the polluted regions. Two types of thickness variations were used: a sudden variation, using a step; and a soft variation, using a ramp; that were put along the way of the discharge. Comparison between the mathematical and experimental models showed that introduction of a ramp makes Obenaus' model more efficient in analyzing behavior of flashover phenomenon. |
publishDate |
1994 |
dc.date.none.fl_str_mv |
1994-12-01 2014-05-27T11:17:58Z 2014-05-27T11:17:58Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/conferenceObject |
format |
conferenceObject |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1109/ELINSL.1994.401397 Conference Record of IEEE International Symposium on Electrical Insulation, p. 546-549. 0164-2006 http://hdl.handle.net/11449/130721 10.1109/ELINSL.1994.401397 WOS:A1994BA96P00132 2-s2.0-0028564615 |
url |
http://dx.doi.org/10.1109/ELINSL.1994.401397 http://hdl.handle.net/11449/130721 |
identifier_str_mv |
Conference Record of IEEE International Symposium on Electrical Insulation, p. 546-549. 0164-2006 10.1109/ELINSL.1994.401397 WOS:A1994BA96P00132 2-s2.0-0028564615 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Conference Record of IEEE International Symposium on Electrical Insulation |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
546-549 |
dc.publisher.none.fl_str_mv |
Institute of Electrical and Electronics Engineers (IEEE) |
publisher.none.fl_str_mv |
Institute of Electrical and Electronics Engineers (IEEE) |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808128596146913280 |