Effect of the gate electrodes/water interface on the performance of ZnO-based water gate field-effect transistors
Autor(a) principal: | |
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Data de Publicação: | 2022 |
Outros Autores: | , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1016/j.mssp.2022.107045 http://hdl.handle.net/11449/241511 |
Resumo: | Field-effect transistors can be gated with water as the dielectric due to the formation of electrical double layers at water interfaces, which results in high specific capacitance and low voltage operation. The incorporation of analytes in aqueous suspension influences the water's electrical properties changing the water-gated field-effect transistors (WGFETs) performance and allowing it to be used as sensor and biosensor platforms. However, the material used as a gate electrode can affect the transistor's performance due to several factors, as the metal work function, its electrochemical range, and the presence of physicochemical reactions. Here, we evaluated the performance of WGFETs using spray-deposited zinc oxide (ZnO) as the active layer and five different gate electrodes: graphite pencil (GP), gold (Au), indium tin oxide (ITO), tungsten (W), and tin (Sn). The threshold voltage (VTH) values found were 0.41, 0.44, 1.12, 1.21 and 1.74 V for the Sn, W, Au, GP and ITO electrodes, respectively. The field-effect mobility was strongly influenced by the gate material, varying in the range from 0.07 to 0.46 cm2/Vs. The WGFETs operating with W and Sn gates showed the highest Ion/Ioff ratio and the lowest VTH when compared to the other electrodes. However, this characteristic may be associated with the formation of a natural oxide layer at its interface with water, which could be undesirable from the stability view. The use of ITO as the gate electrode resulted in a large hysteresis and two orders of magnitude smaller current in the output curve compared to Au and GP. Among the materials used as the gate electrode, GP stands out mainly because it gives the lowest subthreshold swing (SS = 90 mV/dec) and the highest transconductance (gm = 0.40 mS). Also, the GP matches with ZnO as biocompatible material for low-cost, eco-friendly, and metal-free electronics. In summary, the results showed that the gate electrode significantly influences the main parameters of the device and, therefore, should be an analysis factor when aiming to use WGFETs as sensors. |
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Effect of the gate electrodes/water interface on the performance of ZnO-based water gate field-effect transistorsCapacitanceElectrical double layersElectrolyteGate electrodeWater-gated field-effect transistorsZnOField-effect transistors can be gated with water as the dielectric due to the formation of electrical double layers at water interfaces, which results in high specific capacitance and low voltage operation. The incorporation of analytes in aqueous suspension influences the water's electrical properties changing the water-gated field-effect transistors (WGFETs) performance and allowing it to be used as sensor and biosensor platforms. However, the material used as a gate electrode can affect the transistor's performance due to several factors, as the metal work function, its electrochemical range, and the presence of physicochemical reactions. Here, we evaluated the performance of WGFETs using spray-deposited zinc oxide (ZnO) as the active layer and five different gate electrodes: graphite pencil (GP), gold (Au), indium tin oxide (ITO), tungsten (W), and tin (Sn). The threshold voltage (VTH) values found were 0.41, 0.44, 1.12, 1.21 and 1.74 V for the Sn, W, Au, GP and ITO electrodes, respectively. The field-effect mobility was strongly influenced by the gate material, varying in the range from 0.07 to 0.46 cm2/Vs. The WGFETs operating with W and Sn gates showed the highest Ion/Ioff ratio and the lowest VTH when compared to the other electrodes. However, this characteristic may be associated with the formation of a natural oxide layer at its interface with water, which could be undesirable from the stability view. The use of ITO as the gate electrode resulted in a large hysteresis and two orders of magnitude smaller current in the output curve compared to Au and GP. Among the materials used as the gate electrode, GP stands out mainly because it gives the lowest subthreshold swing (SS = 90 mV/dec) and the highest transconductance (gm = 0.40 mS). Also, the GP matches with ZnO as biocompatible material for low-cost, eco-friendly, and metal-free electronics. In summary, the results showed that the gate electrode significantly influences the main parameters of the device and, therefore, should be an analysis factor when aiming to use WGFETs as sensors.Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)São Paulo State University – UNESP Faculty of Science and Technology (FCT) Physics Department, SPSão Paulo State University – UNESP Faculty of Science and Technology (FCT) Physics Department, SPFAPESP: 2018/22214-6FAPESP: 2020/12282-4FAPESP: 2021/01161-4Universidade Estadual Paulista (UNESP)Ozório, Maíza S. [UNESP]Vieira, Douglas H. [UNESP]Nogueira, Gabriel L. [UNESP]Martin, Cibely S. [UNESP]Alves, Neri [UNESP]Constantino, Carlos J.L. [UNESP]2023-03-01T21:07:14Z2023-03-01T21:07:14Z2022-11-15info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articlehttp://dx.doi.org/10.1016/j.mssp.2022.107045Materials Science in Semiconductor Processing, v. 151.1369-8001http://hdl.handle.net/11449/24151110.1016/j.mssp.2022.1070452-s2.0-85135987478Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengMaterials Science in Semiconductor Processinginfo:eu-repo/semantics/openAccess2024-06-18T18:17:52Zoai:repositorio.unesp.br:11449/241511Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T15:05:43.166294Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Effect of the gate electrodes/water interface on the performance of ZnO-based water gate field-effect transistors |
title |
Effect of the gate electrodes/water interface on the performance of ZnO-based water gate field-effect transistors |
spellingShingle |
Effect of the gate electrodes/water interface on the performance of ZnO-based water gate field-effect transistors Ozório, Maíza S. [UNESP] Capacitance Electrical double layers Electrolyte Gate electrode Water-gated field-effect transistors ZnO |
title_short |
Effect of the gate electrodes/water interface on the performance of ZnO-based water gate field-effect transistors |
title_full |
Effect of the gate electrodes/water interface on the performance of ZnO-based water gate field-effect transistors |
title_fullStr |
Effect of the gate electrodes/water interface on the performance of ZnO-based water gate field-effect transistors |
title_full_unstemmed |
Effect of the gate electrodes/water interface on the performance of ZnO-based water gate field-effect transistors |
title_sort |
Effect of the gate electrodes/water interface on the performance of ZnO-based water gate field-effect transistors |
author |
Ozório, Maíza S. [UNESP] |
author_facet |
Ozório, Maíza S. [UNESP] Vieira, Douglas H. [UNESP] Nogueira, Gabriel L. [UNESP] Martin, Cibely S. [UNESP] Alves, Neri [UNESP] Constantino, Carlos J.L. [UNESP] |
author_role |
author |
author2 |
Vieira, Douglas H. [UNESP] Nogueira, Gabriel L. [UNESP] Martin, Cibely S. [UNESP] Alves, Neri [UNESP] Constantino, Carlos J.L. [UNESP] |
author2_role |
author author author author author |
dc.contributor.none.fl_str_mv |
Universidade Estadual Paulista (UNESP) |
dc.contributor.author.fl_str_mv |
Ozório, Maíza S. [UNESP] Vieira, Douglas H. [UNESP] Nogueira, Gabriel L. [UNESP] Martin, Cibely S. [UNESP] Alves, Neri [UNESP] Constantino, Carlos J.L. [UNESP] |
dc.subject.por.fl_str_mv |
Capacitance Electrical double layers Electrolyte Gate electrode Water-gated field-effect transistors ZnO |
topic |
Capacitance Electrical double layers Electrolyte Gate electrode Water-gated field-effect transistors ZnO |
description |
Field-effect transistors can be gated with water as the dielectric due to the formation of electrical double layers at water interfaces, which results in high specific capacitance and low voltage operation. The incorporation of analytes in aqueous suspension influences the water's electrical properties changing the water-gated field-effect transistors (WGFETs) performance and allowing it to be used as sensor and biosensor platforms. However, the material used as a gate electrode can affect the transistor's performance due to several factors, as the metal work function, its electrochemical range, and the presence of physicochemical reactions. Here, we evaluated the performance of WGFETs using spray-deposited zinc oxide (ZnO) as the active layer and five different gate electrodes: graphite pencil (GP), gold (Au), indium tin oxide (ITO), tungsten (W), and tin (Sn). The threshold voltage (VTH) values found were 0.41, 0.44, 1.12, 1.21 and 1.74 V for the Sn, W, Au, GP and ITO electrodes, respectively. The field-effect mobility was strongly influenced by the gate material, varying in the range from 0.07 to 0.46 cm2/Vs. The WGFETs operating with W and Sn gates showed the highest Ion/Ioff ratio and the lowest VTH when compared to the other electrodes. However, this characteristic may be associated with the formation of a natural oxide layer at its interface with water, which could be undesirable from the stability view. The use of ITO as the gate electrode resulted in a large hysteresis and two orders of magnitude smaller current in the output curve compared to Au and GP. Among the materials used as the gate electrode, GP stands out mainly because it gives the lowest subthreshold swing (SS = 90 mV/dec) and the highest transconductance (gm = 0.40 mS). Also, the GP matches with ZnO as biocompatible material for low-cost, eco-friendly, and metal-free electronics. In summary, the results showed that the gate electrode significantly influences the main parameters of the device and, therefore, should be an analysis factor when aiming to use WGFETs as sensors. |
publishDate |
2022 |
dc.date.none.fl_str_mv |
2022-11-15 2023-03-01T21:07:14Z 2023-03-01T21:07:14Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1016/j.mssp.2022.107045 Materials Science in Semiconductor Processing, v. 151. 1369-8001 http://hdl.handle.net/11449/241511 10.1016/j.mssp.2022.107045 2-s2.0-85135987478 |
url |
http://dx.doi.org/10.1016/j.mssp.2022.107045 http://hdl.handle.net/11449/241511 |
identifier_str_mv |
Materials Science in Semiconductor Processing, v. 151. 1369-8001 10.1016/j.mssp.2022.107045 2-s2.0-85135987478 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Materials Science in Semiconductor Processing |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808128459222810624 |