Low Temperature Influence on Long Channel STI Last Process Relaxed and Strained Ge pFinFETs

Detalhes bibliográficos
Autor(a) principal: Oliveira, A. V.
Data de Publicação: 2017
Outros Autores: Agopian, P. G. D. [UNESP], Martino, J. A., Simoen, E., Mitard, J., Witters, L., Collaert, N., Claeys, C., IEEE
Tipo de documento: Artigo de conferência
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://hdl.handle.net/11449/186356
Resumo: The operation of germanium p-type channel FinFETs with two types of different channels, namely, relaxed and strained, is compared from room temperature down to 77 K. The most interesting finding is a higher I-ON over I-OFF ratio for the strained device, achieving around three orders of magnitude higher value than the relaxed channel at 77 K thanks to the strong hole mobility enhancement and thermal deactivation of the off-state current at low temperature.
id UNSP_d80479698832b415fc55f40f9b773909
oai_identifier_str oai:repositorio.unesp.br:11449/186356
network_acronym_str UNSP
network_name_str Repositório Institucional da UNESP
repository_id_str 2946
spelling Low Temperature Influence on Long Channel STI Last Process Relaxed and Strained Ge pFinFETsFinFETgermanium channellow temperatureI-ON/I-OFF ratiorelaxedstrainedThe operation of germanium p-type channel FinFETs with two types of different channels, namely, relaxed and strained, is compared from room temperature down to 77 K. The most interesting finding is a higher I-ON over I-OFF ratio for the strained device, achieving around three orders of magnitude higher value than the relaxed channel at 77 K thanks to the strong hole mobility enhancement and thermal deactivation of the off-state current at low temperature.Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)FWOLogic IIAP programUTFPR, Campus Toledo, Apucarana, BrazilUniv Sao Paulo, PSI, LSI, Sao Paulo, BrazilIMEC, Leuven, BelgiumUniv Estadual Paulista, Campus Sao Joao Boa Vista, Sao Paulo, BrazilKatholieke Univ Leuven, EE Dept, Leuven, BelgiumUniv Estadual Paulista, Campus Sao Joao Boa Vista, Sao Paulo, BrazilIeeeUTFPRUniversidade de São Paulo (USP)IMECUniversidade Estadual Paulista (Unesp)Katholieke Univ LeuvenOliveira, A. V.Agopian, P. G. D. [UNESP]Martino, J. A.Simoen, E.Mitard, J.Witters, L.Collaert, N.Claeys, C.IEEE2019-10-04T19:12:30Z2019-10-04T19:12:30Z2017-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObject32017 Ieee Soi-3d-subthreshold Microelectronics Technology Unified Conference (s3s). New York: Ieee, 3 p., 2017.2573-5926http://hdl.handle.net/11449/186356WOS:000463041500075Web of Sciencereponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPeng2017 Ieee Soi-3d-subthreshold Microelectronics Technology Unified Conference (s3s)info:eu-repo/semantics/openAccess2021-10-22T23:59:50Zoai:repositorio.unesp.br:11449/186356Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T17:17:56.249539Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Low Temperature Influence on Long Channel STI Last Process Relaxed and Strained Ge pFinFETs
title Low Temperature Influence on Long Channel STI Last Process Relaxed and Strained Ge pFinFETs
spellingShingle Low Temperature Influence on Long Channel STI Last Process Relaxed and Strained Ge pFinFETs
Oliveira, A. V.
FinFET
germanium channel
low temperature
I-ON/I-OFF ratio
relaxed
strained
title_short Low Temperature Influence on Long Channel STI Last Process Relaxed and Strained Ge pFinFETs
title_full Low Temperature Influence on Long Channel STI Last Process Relaxed and Strained Ge pFinFETs
title_fullStr Low Temperature Influence on Long Channel STI Last Process Relaxed and Strained Ge pFinFETs
title_full_unstemmed Low Temperature Influence on Long Channel STI Last Process Relaxed and Strained Ge pFinFETs
title_sort Low Temperature Influence on Long Channel STI Last Process Relaxed and Strained Ge pFinFETs
author Oliveira, A. V.
author_facet Oliveira, A. V.
Agopian, P. G. D. [UNESP]
Martino, J. A.
Simoen, E.
Mitard, J.
Witters, L.
Collaert, N.
Claeys, C.
IEEE
author_role author
author2 Agopian, P. G. D. [UNESP]
Martino, J. A.
Simoen, E.
Mitard, J.
Witters, L.
Collaert, N.
Claeys, C.
IEEE
author2_role author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv UTFPR
Universidade de São Paulo (USP)
IMEC
Universidade Estadual Paulista (Unesp)
Katholieke Univ Leuven
dc.contributor.author.fl_str_mv Oliveira, A. V.
Agopian, P. G. D. [UNESP]
Martino, J. A.
Simoen, E.
Mitard, J.
Witters, L.
Collaert, N.
Claeys, C.
IEEE
dc.subject.por.fl_str_mv FinFET
germanium channel
low temperature
I-ON/I-OFF ratio
relaxed
strained
topic FinFET
germanium channel
low temperature
I-ON/I-OFF ratio
relaxed
strained
description The operation of germanium p-type channel FinFETs with two types of different channels, namely, relaxed and strained, is compared from room temperature down to 77 K. The most interesting finding is a higher I-ON over I-OFF ratio for the strained device, achieving around three orders of magnitude higher value than the relaxed channel at 77 K thanks to the strong hole mobility enhancement and thermal deactivation of the off-state current at low temperature.
publishDate 2017
dc.date.none.fl_str_mv 2017-01-01
2019-10-04T19:12:30Z
2019-10-04T19:12:30Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/conferenceObject
format conferenceObject
status_str publishedVersion
dc.identifier.uri.fl_str_mv 2017 Ieee Soi-3d-subthreshold Microelectronics Technology Unified Conference (s3s). New York: Ieee, 3 p., 2017.
2573-5926
http://hdl.handle.net/11449/186356
WOS:000463041500075
identifier_str_mv 2017 Ieee Soi-3d-subthreshold Microelectronics Technology Unified Conference (s3s). New York: Ieee, 3 p., 2017.
2573-5926
WOS:000463041500075
url http://hdl.handle.net/11449/186356
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 2017 Ieee Soi-3d-subthreshold Microelectronics Technology Unified Conference (s3s)
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 3
dc.publisher.none.fl_str_mv Ieee
publisher.none.fl_str_mv Ieee
dc.source.none.fl_str_mv Web of Science
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
_version_ 1808128788078264320

Registros relacionados