A tunnel-FET device model based on Verilog-A applied to circuit simulation
Autor(a) principal: | |
---|---|
Data de Publicação: | 2018 |
Outros Autores: | , |
Tipo de documento: | Artigo de conferência |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1109/SBMicro.2018.8511536 http://hdl.handle.net/11449/187117 |
Resumo: | This work proposes a simple methodology for using Tunnel-FET devices, which do not have any accurate first order analytic models, for allowing the integrated circuit simulation with these devices. The method uses experimental characterization to collect the transfers and output characteristics of a new device accessed by Verilog-A models using lookup table method and spline interpolation to simulate the behavior of the real device when in presence of arbitrary biasing. In this paper it is studied a silicon Tunnel-FET (TFET), but it is also valid for any other new semiconductor devices like nanowire and nanosheet. The proposed model allows to anticipate the behavior of complex circuits, whose study would be possible only after the device technology consolidation. Different than compact models, like spice, obtained from physical semiconductor simulators, the proposed Verilog-A models do not need to pass by the physical modeling step, having the advantage of keeping the original device experimental response. The proposed method is validated comparing the current response of the simulated pTFET with experimental data, and with a pTFET current mirror, whose behavior is known from previous works. Further, a pTFET and nTFET complementary common-source amplifier circuit is also analyzed. The response of the analyzed current mirror showed a very stable current output for a large range of load voltage variation inside saturation-like operation region. The analyzed intrinsic gain response of the transistor showed values near to 60 dB, due to its very high Early voltage of pTFET. The voltage gain value also could be analyzed in the common-source circuit, showing a value of 55 dB. |
id |
UNSP_9fb610ac0c1c95098a4fecf324b64e63 |
---|---|
oai_identifier_str |
oai:repositorio.unesp.br:11449/187117 |
network_acronym_str |
UNSP |
network_name_str |
Repositório Institucional da UNESP |
repository_id_str |
2946 |
spelling |
A tunnel-FET device model based on Verilog-A applied to circuit simulationCircuit simulationTFETVerilog AThis work proposes a simple methodology for using Tunnel-FET devices, which do not have any accurate first order analytic models, for allowing the integrated circuit simulation with these devices. The method uses experimental characterization to collect the transfers and output characteristics of a new device accessed by Verilog-A models using lookup table method and spline interpolation to simulate the behavior of the real device when in presence of arbitrary biasing. In this paper it is studied a silicon Tunnel-FET (TFET), but it is also valid for any other new semiconductor devices like nanowire and nanosheet. The proposed model allows to anticipate the behavior of complex circuits, whose study would be possible only after the device technology consolidation. Different than compact models, like spice, obtained from physical semiconductor simulators, the proposed Verilog-A models do not need to pass by the physical modeling step, having the advantage of keeping the original device experimental response. The proposed method is validated comparing the current response of the simulated pTFET with experimental data, and with a pTFET current mirror, whose behavior is known from previous works. Further, a pTFET and nTFET complementary common-source amplifier circuit is also analyzed. The response of the analyzed current mirror showed a very stable current output for a large range of load voltage variation inside saturation-like operation region. The analyzed intrinsic gain response of the transistor showed values near to 60 dB, due to its very high Early voltage of pTFET. The voltage gain value also could be analyzed in the common-source circuit, showing a value of 55 dB.LSI/PSI/USP University of Sao PauloCI Brasil Program (CT-SP)Sao Paulo State University (UNESP)Sao Paulo State University (UNESP)Universidade de São Paulo (USP)CI Brasil Program (CT-SP)Universidade Estadual Paulista (Unesp)Rangel, R. S.Agopian, P. G.D. [UNESP]Martino, J. A.2019-10-06T15:25:58Z2019-10-06T15:25:58Z2018-10-26info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/conferenceObjecthttp://dx.doi.org/10.1109/SBMicro.2018.851153633rd Symposium on Microelectronics Technology and Devices, SBMicro 2018.http://hdl.handle.net/11449/18711710.1109/SBMicro.2018.85115362-s2.0-8505742795204969095954656960000-0002-0886-7798Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPeng33rd Symposium on Microelectronics Technology and Devices, SBMicro 2018info:eu-repo/semantics/openAccess2021-10-22T21:54:16Zoai:repositorio.unesp.br:11449/187117Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T13:45:43.575651Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
A tunnel-FET device model based on Verilog-A applied to circuit simulation |
title |
A tunnel-FET device model based on Verilog-A applied to circuit simulation |
spellingShingle |
A tunnel-FET device model based on Verilog-A applied to circuit simulation Rangel, R. S. Circuit simulation TFET Verilog A |
title_short |
A tunnel-FET device model based on Verilog-A applied to circuit simulation |
title_full |
A tunnel-FET device model based on Verilog-A applied to circuit simulation |
title_fullStr |
A tunnel-FET device model based on Verilog-A applied to circuit simulation |
title_full_unstemmed |
A tunnel-FET device model based on Verilog-A applied to circuit simulation |
title_sort |
A tunnel-FET device model based on Verilog-A applied to circuit simulation |
author |
Rangel, R. S. |
author_facet |
Rangel, R. S. Agopian, P. G.D. [UNESP] Martino, J. A. |
author_role |
author |
author2 |
Agopian, P. G.D. [UNESP] Martino, J. A. |
author2_role |
author author |
dc.contributor.none.fl_str_mv |
Universidade de São Paulo (USP) CI Brasil Program (CT-SP) Universidade Estadual Paulista (Unesp) |
dc.contributor.author.fl_str_mv |
Rangel, R. S. Agopian, P. G.D. [UNESP] Martino, J. A. |
dc.subject.por.fl_str_mv |
Circuit simulation TFET Verilog A |
topic |
Circuit simulation TFET Verilog A |
description |
This work proposes a simple methodology for using Tunnel-FET devices, which do not have any accurate first order analytic models, for allowing the integrated circuit simulation with these devices. The method uses experimental characterization to collect the transfers and output characteristics of a new device accessed by Verilog-A models using lookup table method and spline interpolation to simulate the behavior of the real device when in presence of arbitrary biasing. In this paper it is studied a silicon Tunnel-FET (TFET), but it is also valid for any other new semiconductor devices like nanowire and nanosheet. The proposed model allows to anticipate the behavior of complex circuits, whose study would be possible only after the device technology consolidation. Different than compact models, like spice, obtained from physical semiconductor simulators, the proposed Verilog-A models do not need to pass by the physical modeling step, having the advantage of keeping the original device experimental response. The proposed method is validated comparing the current response of the simulated pTFET with experimental data, and with a pTFET current mirror, whose behavior is known from previous works. Further, a pTFET and nTFET complementary common-source amplifier circuit is also analyzed. The response of the analyzed current mirror showed a very stable current output for a large range of load voltage variation inside saturation-like operation region. The analyzed intrinsic gain response of the transistor showed values near to 60 dB, due to its very high Early voltage of pTFET. The voltage gain value also could be analyzed in the common-source circuit, showing a value of 55 dB. |
publishDate |
2018 |
dc.date.none.fl_str_mv |
2018-10-26 2019-10-06T15:25:58Z 2019-10-06T15:25:58Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/conferenceObject |
format |
conferenceObject |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1109/SBMicro.2018.8511536 33rd Symposium on Microelectronics Technology and Devices, SBMicro 2018. http://hdl.handle.net/11449/187117 10.1109/SBMicro.2018.8511536 2-s2.0-85057427952 0496909595465696 0000-0002-0886-7798 |
url |
http://dx.doi.org/10.1109/SBMicro.2018.8511536 http://hdl.handle.net/11449/187117 |
identifier_str_mv |
33rd Symposium on Microelectronics Technology and Devices, SBMicro 2018. 10.1109/SBMicro.2018.8511536 2-s2.0-85057427952 0496909595465696 0000-0002-0886-7798 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
33rd Symposium on Microelectronics Technology and Devices, SBMicro 2018 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808128273016684544 |