Sensitive Devices Based on Field-Effect Transistors
Autor(a) principal: | |
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Data de Publicação: | 2022 |
Outros Autores: | , |
Tipo de documento: | Capítulo de livro |
Idioma: | eng |
Título da fonte: | Repositório Institucional da UNESP |
Texto Completo: | http://dx.doi.org/10.1007/978-3-030-94988-4_5 http://hdl.handle.net/11449/247343 |
Resumo: | Among the various types of transducers applied in Bioelectronics (i.e., the combination of biological materials and electronic components), Bergveld introduced the concept of field-effect transistor (FET) for neurophysiological measurements presenting to the scientific community the ion-sensitive field-effect transistor (ISFET) [1, 2]. An ISFET is a device very similar to a MOSFET (metal-oxide-semiconductor field-effect transistor). The difference between them is the non-existence of the metallic gate electrode in the ISFET, replaced by a reference electrode in a solution [3]. |
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Repositório Institucional da UNESP |
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Sensitive Devices Based on Field-Effect TransistorsAmong the various types of transducers applied in Bioelectronics (i.e., the combination of biological materials and electronic components), Bergveld introduced the concept of field-effect transistor (FET) for neurophysiological measurements presenting to the scientific community the ion-sensitive field-effect transistor (ISFET) [1, 2]. An ISFET is a device very similar to a MOSFET (metal-oxide-semiconductor field-effect transistor). The difference between them is the non-existence of the metallic gate electrode in the ISFET, replaced by a reference electrode in a solution [3].Institute of Science and Technology Federal University of São Paulo, SPInstitute of Chemistry São Paulo State University (Unesp), SPInstitute of Chemistry São Paulo State University (Unesp), SPUniversidade de São Paulo (USP)Universidade Estadual Paulista (UNESP)Faria, Henrique Antonio Mendonça [UNESP]Fernandes, Edson Giuliani RamosVieira, Nirton Cristi Silva2023-07-29T13:13:29Z2023-07-29T13:13:29Z2022-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/bookPart71-87http://dx.doi.org/10.1007/978-3-030-94988-4_5Advances in Bioelectrochemistry Volume 1: Surface, Electron Transfer and Techniques, v. 1, p. 71-87.http://hdl.handle.net/11449/24734310.1007/978-3-030-94988-4_52-s2.0-85159001345Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengAdvances in Bioelectrochemistry Volume 1: Surface, Electron Transfer and Techniquesinfo:eu-repo/semantics/openAccess2023-07-29T13:13:29Zoai:repositorio.unesp.br:11449/247343Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T21:28:16.919102Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false |
dc.title.none.fl_str_mv |
Sensitive Devices Based on Field-Effect Transistors |
title |
Sensitive Devices Based on Field-Effect Transistors |
spellingShingle |
Sensitive Devices Based on Field-Effect Transistors Faria, Henrique Antonio Mendonça [UNESP] |
title_short |
Sensitive Devices Based on Field-Effect Transistors |
title_full |
Sensitive Devices Based on Field-Effect Transistors |
title_fullStr |
Sensitive Devices Based on Field-Effect Transistors |
title_full_unstemmed |
Sensitive Devices Based on Field-Effect Transistors |
title_sort |
Sensitive Devices Based on Field-Effect Transistors |
author |
Faria, Henrique Antonio Mendonça [UNESP] |
author_facet |
Faria, Henrique Antonio Mendonça [UNESP] Fernandes, Edson Giuliani Ramos Vieira, Nirton Cristi Silva |
author_role |
author |
author2 |
Fernandes, Edson Giuliani Ramos Vieira, Nirton Cristi Silva |
author2_role |
author author |
dc.contributor.none.fl_str_mv |
Universidade de São Paulo (USP) Universidade Estadual Paulista (UNESP) |
dc.contributor.author.fl_str_mv |
Faria, Henrique Antonio Mendonça [UNESP] Fernandes, Edson Giuliani Ramos Vieira, Nirton Cristi Silva |
description |
Among the various types of transducers applied in Bioelectronics (i.e., the combination of biological materials and electronic components), Bergveld introduced the concept of field-effect transistor (FET) for neurophysiological measurements presenting to the scientific community the ion-sensitive field-effect transistor (ISFET) [1, 2]. An ISFET is a device very similar to a MOSFET (metal-oxide-semiconductor field-effect transistor). The difference between them is the non-existence of the metallic gate electrode in the ISFET, replaced by a reference electrode in a solution [3]. |
publishDate |
2022 |
dc.date.none.fl_str_mv |
2022-01-01 2023-07-29T13:13:29Z 2023-07-29T13:13:29Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/bookPart |
format |
bookPart |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://dx.doi.org/10.1007/978-3-030-94988-4_5 Advances in Bioelectrochemistry Volume 1: Surface, Electron Transfer and Techniques, v. 1, p. 71-87. http://hdl.handle.net/11449/247343 10.1007/978-3-030-94988-4_5 2-s2.0-85159001345 |
url |
http://dx.doi.org/10.1007/978-3-030-94988-4_5 http://hdl.handle.net/11449/247343 |
identifier_str_mv |
Advances in Bioelectrochemistry Volume 1: Surface, Electron Transfer and Techniques, v. 1, p. 71-87. 10.1007/978-3-030-94988-4_5 2-s2.0-85159001345 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Advances in Bioelectrochemistry Volume 1: Surface, Electron Transfer and Techniques |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
71-87 |
dc.source.none.fl_str_mv |
Scopus reponame:Repositório Institucional da UNESP instname:Universidade Estadual Paulista (UNESP) instacron:UNESP |
instname_str |
Universidade Estadual Paulista (UNESP) |
instacron_str |
UNESP |
institution |
UNESP |
reponame_str |
Repositório Institucional da UNESP |
collection |
Repositório Institucional da UNESP |
repository.name.fl_str_mv |
Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP) |
repository.mail.fl_str_mv |
|
_version_ |
1808129324248727552 |