Sensitive Devices Based on Field-Effect Transistors

Detalhes bibliográficos
Autor(a) principal: Faria, Henrique Antonio Mendonça [UNESP]
Data de Publicação: 2022
Outros Autores: Fernandes, Edson Giuliani Ramos, Vieira, Nirton Cristi Silva
Tipo de documento: Capítulo de livro
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1007/978-3-030-94988-4_5
http://hdl.handle.net/11449/247343
Resumo: Among the various types of transducers applied in Bioelectronics (i.e., the combination of biological materials and electronic components), Bergveld introduced the concept of field-effect transistor (FET) for neurophysiological measurements presenting to the scientific community the ion-sensitive field-effect transistor (ISFET) [1, 2]. An ISFET is a device very similar to a MOSFET (metal-oxide-semiconductor field-effect transistor). The difference between them is the non-existence of the metallic gate electrode in the ISFET, replaced by a reference electrode in a solution [3].
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spelling Sensitive Devices Based on Field-Effect TransistorsAmong the various types of transducers applied in Bioelectronics (i.e., the combination of biological materials and electronic components), Bergveld introduced the concept of field-effect transistor (FET) for neurophysiological measurements presenting to the scientific community the ion-sensitive field-effect transistor (ISFET) [1, 2]. An ISFET is a device very similar to a MOSFET (metal-oxide-semiconductor field-effect transistor). The difference between them is the non-existence of the metallic gate electrode in the ISFET, replaced by a reference electrode in a solution [3].Institute of Science and Technology Federal University of São Paulo, SPInstitute of Chemistry São Paulo State University (Unesp), SPInstitute of Chemistry São Paulo State University (Unesp), SPUniversidade de São Paulo (USP)Universidade Estadual Paulista (UNESP)Faria, Henrique Antonio Mendonça [UNESP]Fernandes, Edson Giuliani RamosVieira, Nirton Cristi Silva2023-07-29T13:13:29Z2023-07-29T13:13:29Z2022-01-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/bookPart71-87http://dx.doi.org/10.1007/978-3-030-94988-4_5Advances in Bioelectrochemistry Volume 1: Surface, Electron Transfer and Techniques, v. 1, p. 71-87.http://hdl.handle.net/11449/24734310.1007/978-3-030-94988-4_52-s2.0-85159001345Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengAdvances in Bioelectrochemistry Volume 1: Surface, Electron Transfer and Techniquesinfo:eu-repo/semantics/openAccess2023-07-29T13:13:29Zoai:repositorio.unesp.br:11449/247343Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T21:28:16.919102Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv Sensitive Devices Based on Field-Effect Transistors
title Sensitive Devices Based on Field-Effect Transistors
spellingShingle Sensitive Devices Based on Field-Effect Transistors
Faria, Henrique Antonio Mendonça [UNESP]
title_short Sensitive Devices Based on Field-Effect Transistors
title_full Sensitive Devices Based on Field-Effect Transistors
title_fullStr Sensitive Devices Based on Field-Effect Transistors
title_full_unstemmed Sensitive Devices Based on Field-Effect Transistors
title_sort Sensitive Devices Based on Field-Effect Transistors
author Faria, Henrique Antonio Mendonça [UNESP]
author_facet Faria, Henrique Antonio Mendonça [UNESP]
Fernandes, Edson Giuliani Ramos
Vieira, Nirton Cristi Silva
author_role author
author2 Fernandes, Edson Giuliani Ramos
Vieira, Nirton Cristi Silva
author2_role author
author
dc.contributor.none.fl_str_mv Universidade de São Paulo (USP)
Universidade Estadual Paulista (UNESP)
dc.contributor.author.fl_str_mv Faria, Henrique Antonio Mendonça [UNESP]
Fernandes, Edson Giuliani Ramos
Vieira, Nirton Cristi Silva
description Among the various types of transducers applied in Bioelectronics (i.e., the combination of biological materials and electronic components), Bergveld introduced the concept of field-effect transistor (FET) for neurophysiological measurements presenting to the scientific community the ion-sensitive field-effect transistor (ISFET) [1, 2]. An ISFET is a device very similar to a MOSFET (metal-oxide-semiconductor field-effect transistor). The difference between them is the non-existence of the metallic gate electrode in the ISFET, replaced by a reference electrode in a solution [3].
publishDate 2022
dc.date.none.fl_str_mv 2022-01-01
2023-07-29T13:13:29Z
2023-07-29T13:13:29Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/bookPart
format bookPart
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1007/978-3-030-94988-4_5
Advances in Bioelectrochemistry Volume 1: Surface, Electron Transfer and Techniques, v. 1, p. 71-87.
http://hdl.handle.net/11449/247343
10.1007/978-3-030-94988-4_5
2-s2.0-85159001345
url http://dx.doi.org/10.1007/978-3-030-94988-4_5
http://hdl.handle.net/11449/247343
identifier_str_mv Advances in Bioelectrochemistry Volume 1: Surface, Electron Transfer and Techniques, v. 1, p. 71-87.
10.1007/978-3-030-94988-4_5
2-s2.0-85159001345
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Advances in Bioelectrochemistry Volume 1: Surface, Electron Transfer and Techniques
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 71-87
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
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