Thickness-dependent piezoelectric behaviour and dielectric properties of lanthanum modified BiFeO3 thin films

• Autor(a) principal: Biasotto, Glenda [UNESP]
• Data de Publicação: 2011
• Outros Autores: Moura, Francisco, Foschini, César [UNESP], Silva, Elson Longo da [UNESP], Varela, José Arana [UNESP], Simões, Alexandre Zirpoli [UNESP]
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Institucional da UNESP
• DOI: 10.2298/PAC1101031B
• Texto Completo: http://www.tf.uns.ac.rs/publikacije/PAC/tablesofcontents.html; http://hdl.handle.net/11449/123457
• topic: Thin films; Oxides; Chemical synthesis; Piezoelectricity

Bi0.85La0.15FeO3 (BLFO) thin films were deposited on Pt(111)/Ti/SiO2 /Si substrates by the soft chemical method. Films with thicknesses ranging from 140 to 280 nm were grown on platinum coated silicon substrates at 500°C for 2 hours. The X-ray diffraction analysis of BLFO films evidenced a hexagonal structure over the entire thickness range investigated. The grain size of the film changes as the number of the layers increases, indicating thickness dependence. It is found that the piezoelectric response is strongly influenced by the film thickness. It is shown that the properties of BiFeO3 thin films, such as lattice parameter, dielectric permittivity, piezoeletric coefficient etc., are functions of misfit strains.