The role of intrinsic trap states in the semiconductor/insulating interface on the electrical performance of spray-coated thin-film transistors

Detalhes bibliográficos
Autor(a) principal: Braga, João P. [UNESP]
Data de Publicação: 2022
Outros Autores: Amorim, Cleber A. [UNESP], Lima, Guilherme R. de [UNESP], Gozzi, Giovani [UNESP], Fugikawa-Santos, Lucas [UNESP]
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UNESP
Texto Completo: http://dx.doi.org/10.1016/j.mssp.2022.106984
http://hdl.handle.net/11449/240594
Resumo: The effect of intrinsic defects at the semiconductor/insulating interface of spray-coated zinc oxide (ZnO) thin-film transistors (TFTs) has been studied by analysing the electrical behaviour of devices fabricated using different thicknesses of the silicon dioxide (SiO2) dielectric layer, in the 100 – 300 K temperature range. We have observed that, when normalized by the dielectric layer thickness, TFTs produced with thicker dielectrics presented improved performance (higher relative linear mobility), because of lower influence from intrinsic trap states at the semiconductor/insulating interface. A comparison of the activation energy for the density of interface defects and for the trapped surface charge evaluated from the threshold voltage variation and from the subthreshold swing was used to explain the temperature behaviour of the carrier mobility for different dielectric layer thicknesses. The results show that absolute device parameters such as saturation mobility and “on” current can obscure the deleterious effect of interface states on the electrical transport in TFTs, demonstrating the importance of analysing the electrical measurement results in the linear operation regime, where the charge carrier density in the transistor channel is more uniform and electric field effects can be parametrized.
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spelling The role of intrinsic trap states in the semiconductor/insulating interface on the electrical performance of spray-coated thin-film transistorsThe effect of intrinsic defects at the semiconductor/insulating interface of spray-coated zinc oxide (ZnO) thin-film transistors (TFTs) has been studied by analysing the electrical behaviour of devices fabricated using different thicknesses of the silicon dioxide (SiO2) dielectric layer, in the 100 – 300 K temperature range. We have observed that, when normalized by the dielectric layer thickness, TFTs produced with thicker dielectrics presented improved performance (higher relative linear mobility), because of lower influence from intrinsic trap states at the semiconductor/insulating interface. A comparison of the activation energy for the density of interface defects and for the trapped surface charge evaluated from the threshold voltage variation and from the subthreshold swing was used to explain the temperature behaviour of the carrier mobility for different dielectric layer thicknesses. The results show that absolute device parameters such as saturation mobility and “on” current can obscure the deleterious effect of interface states on the electrical transport in TFTs, demonstrating the importance of analysing the electrical measurement results in the linear operation regime, where the charge carrier density in the transistor channel is more uniform and electric field effects can be parametrized.Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)São Paulo State University – UNESP Institute of Biosciences Letters and Exact Sciences, SPSão Paulo State University – UNESP Faculty of Science and Engineering, SPSão Paulo State University – UNESP Institute of Geosciences and Exact Sciences, Av. 24ASão Paulo State University – UNESP Institute of Biosciences Letters and Exact Sciences, SPSão Paulo State University – UNESP Faculty of Science and Engineering, SPSão Paulo State University – UNESP Institute of Geosciences and Exact Sciences, Av. 24ACAPES: 001FAPESP: 2014/50869-6FAPESP: 2019/08019-9Universidade Estadual Paulista (UNESP)Braga, João P. [UNESP]Amorim, Cleber A. [UNESP]Lima, Guilherme R. de [UNESP]Gozzi, Giovani [UNESP]Fugikawa-Santos, Lucas [UNESP]2023-03-01T20:24:21Z2023-03-01T20:24:21Z2022-11-15info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articlehttp://dx.doi.org/10.1016/j.mssp.2022.106984Materials Science in Semiconductor Processing, v. 151.1369-8001http://hdl.handle.net/11449/24059410.1016/j.mssp.2022.1069842-s2.0-85135387757Scopusreponame:Repositório Institucional da UNESPinstname:Universidade Estadual Paulista (UNESP)instacron:UNESPengMaterials Science in Semiconductor Processinginfo:eu-repo/semantics/openAccess2023-03-01T20:24:21Zoai:repositorio.unesp.br:11449/240594Repositório InstitucionalPUBhttp://repositorio.unesp.br/oai/requestopendoar:29462024-08-05T18:40:02.922693Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)false
dc.title.none.fl_str_mv The role of intrinsic trap states in the semiconductor/insulating interface on the electrical performance of spray-coated thin-film transistors
title The role of intrinsic trap states in the semiconductor/insulating interface on the electrical performance of spray-coated thin-film transistors
spellingShingle The role of intrinsic trap states in the semiconductor/insulating interface on the electrical performance of spray-coated thin-film transistors
Braga, João P. [UNESP]
title_short The role of intrinsic trap states in the semiconductor/insulating interface on the electrical performance of spray-coated thin-film transistors
title_full The role of intrinsic trap states in the semiconductor/insulating interface on the electrical performance of spray-coated thin-film transistors
title_fullStr The role of intrinsic trap states in the semiconductor/insulating interface on the electrical performance of spray-coated thin-film transistors
title_full_unstemmed The role of intrinsic trap states in the semiconductor/insulating interface on the electrical performance of spray-coated thin-film transistors
title_sort The role of intrinsic trap states in the semiconductor/insulating interface on the electrical performance of spray-coated thin-film transistors
author Braga, João P. [UNESP]
author_facet Braga, João P. [UNESP]
Amorim, Cleber A. [UNESP]
Lima, Guilherme R. de [UNESP]
Gozzi, Giovani [UNESP]
Fugikawa-Santos, Lucas [UNESP]
author_role author
author2 Amorim, Cleber A. [UNESP]
Lima, Guilherme R. de [UNESP]
Gozzi, Giovani [UNESP]
Fugikawa-Santos, Lucas [UNESP]
author2_role author
author
author
author
dc.contributor.none.fl_str_mv Universidade Estadual Paulista (UNESP)
dc.contributor.author.fl_str_mv Braga, João P. [UNESP]
Amorim, Cleber A. [UNESP]
Lima, Guilherme R. de [UNESP]
Gozzi, Giovani [UNESP]
Fugikawa-Santos, Lucas [UNESP]
description The effect of intrinsic defects at the semiconductor/insulating interface of spray-coated zinc oxide (ZnO) thin-film transistors (TFTs) has been studied by analysing the electrical behaviour of devices fabricated using different thicknesses of the silicon dioxide (SiO2) dielectric layer, in the 100 – 300 K temperature range. We have observed that, when normalized by the dielectric layer thickness, TFTs produced with thicker dielectrics presented improved performance (higher relative linear mobility), because of lower influence from intrinsic trap states at the semiconductor/insulating interface. A comparison of the activation energy for the density of interface defects and for the trapped surface charge evaluated from the threshold voltage variation and from the subthreshold swing was used to explain the temperature behaviour of the carrier mobility for different dielectric layer thicknesses. The results show that absolute device parameters such as saturation mobility and “on” current can obscure the deleterious effect of interface states on the electrical transport in TFTs, demonstrating the importance of analysing the electrical measurement results in the linear operation regime, where the charge carrier density in the transistor channel is more uniform and electric field effects can be parametrized.
publishDate 2022
dc.date.none.fl_str_mv 2022-11-15
2023-03-01T20:24:21Z
2023-03-01T20:24:21Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://dx.doi.org/10.1016/j.mssp.2022.106984
Materials Science in Semiconductor Processing, v. 151.
1369-8001
http://hdl.handle.net/11449/240594
10.1016/j.mssp.2022.106984
2-s2.0-85135387757
url http://dx.doi.org/10.1016/j.mssp.2022.106984
http://hdl.handle.net/11449/240594
identifier_str_mv Materials Science in Semiconductor Processing, v. 151.
1369-8001
10.1016/j.mssp.2022.106984
2-s2.0-85135387757
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Materials Science in Semiconductor Processing
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.source.none.fl_str_mv Scopus
reponame:Repositório Institucional da UNESP
instname:Universidade Estadual Paulista (UNESP)
instacron:UNESP
instname_str Universidade Estadual Paulista (UNESP)
instacron_str UNESP
institution UNESP
reponame_str Repositório Institucional da UNESP
collection Repositório Institucional da UNESP
repository.name.fl_str_mv Repositório Institucional da UNESP - Universidade Estadual Paulista (UNESP)
repository.mail.fl_str_mv
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