Phosphorus emitter and metal - grid optimization for homogeneous (n+p) and double-diffused (n++n+p) emitter silicon solar cells
Autor(a) principal: | |
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Data de Publicação: | 2009 |
Outros Autores: | |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Materials research (São Carlos. Online) |
Texto Completo: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392009000100006 |
Resumo: | This work focuses on studying two types of structure: homogeneous and double-diffused emitter silicon solar cells. The emitter collection efficiencies and the recombination current densities were studied for a wide range of surface dopant concentrations and thicknesses. The frontal metal-grid was optimized for each emitter, considering the dependence on the metal-semiconductor contact resistivity and on the emitter sheet resistance. The best efficiency for n+p structures, η≈ 25.5%, is found for emitters with thicknesses between (0.5-3) µm and surface doping concentrations in the range 2 x 10(19) cm-3- 4 x 10(18) cm-3; while the n++n+p structure a maximum efficiency of η≈ 26.0% was identified for an even wider range of emitter profiles. |
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Phosphorus emitter and metal - grid optimization for homogeneous (n+p) and double-diffused (n++n+p) emitter silicon solar cellsmodellingemitter optimizationefficiency limitsThis work focuses on studying two types of structure: homogeneous and double-diffused emitter silicon solar cells. The emitter collection efficiencies and the recombination current densities were studied for a wide range of surface dopant concentrations and thicknesses. The frontal metal-grid was optimized for each emitter, considering the dependence on the metal-semiconductor contact resistivity and on the emitter sheet resistance. The best efficiency for n+p structures, η≈ 25.5%, is found for emitters with thicknesses between (0.5-3) µm and surface doping concentrations in the range 2 x 10(19) cm-3- 4 x 10(18) cm-3; while the n++n+p structure a maximum efficiency of η≈ 26.0% was identified for an even wider range of emitter profiles.ABM, ABC, ABPol2009-03-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392009000100006Materials Research v.12 n.1 2009reponame:Materials research (São Carlos. Online)instname:Universidade Federal de São Carlos (UFSCAR)instacron:ABM ABC ABPOL10.1590/S1516-14392009000100006info:eu-repo/semantics/openAccessSánchez,Manuel CidStem,Naireng2009-05-18T00:00:00Zoai:scielo:S1516-14392009000100006Revistahttp://www.scielo.br/mrPUBhttps://old.scielo.br/oai/scielo-oai.phpdedz@power.ufscar.br1980-53731516-1439opendoar:2009-05-18T00:00Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR)false |
dc.title.none.fl_str_mv |
Phosphorus emitter and metal - grid optimization for homogeneous (n+p) and double-diffused (n++n+p) emitter silicon solar cells |
title |
Phosphorus emitter and metal - grid optimization for homogeneous (n+p) and double-diffused (n++n+p) emitter silicon solar cells |
spellingShingle |
Phosphorus emitter and metal - grid optimization for homogeneous (n+p) and double-diffused (n++n+p) emitter silicon solar cells Sánchez,Manuel Cid modelling emitter optimization efficiency limits |
title_short |
Phosphorus emitter and metal - grid optimization for homogeneous (n+p) and double-diffused (n++n+p) emitter silicon solar cells |
title_full |
Phosphorus emitter and metal - grid optimization for homogeneous (n+p) and double-diffused (n++n+p) emitter silicon solar cells |
title_fullStr |
Phosphorus emitter and metal - grid optimization for homogeneous (n+p) and double-diffused (n++n+p) emitter silicon solar cells |
title_full_unstemmed |
Phosphorus emitter and metal - grid optimization for homogeneous (n+p) and double-diffused (n++n+p) emitter silicon solar cells |
title_sort |
Phosphorus emitter and metal - grid optimization for homogeneous (n+p) and double-diffused (n++n+p) emitter silicon solar cells |
author |
Sánchez,Manuel Cid |
author_facet |
Sánchez,Manuel Cid Stem,Nair |
author_role |
author |
author2 |
Stem,Nair |
author2_role |
author |
dc.contributor.author.fl_str_mv |
Sánchez,Manuel Cid Stem,Nair |
dc.subject.por.fl_str_mv |
modelling emitter optimization efficiency limits |
topic |
modelling emitter optimization efficiency limits |
description |
This work focuses on studying two types of structure: homogeneous and double-diffused emitter silicon solar cells. The emitter collection efficiencies and the recombination current densities were studied for a wide range of surface dopant concentrations and thicknesses. The frontal metal-grid was optimized for each emitter, considering the dependence on the metal-semiconductor contact resistivity and on the emitter sheet resistance. The best efficiency for n+p structures, η≈ 25.5%, is found for emitters with thicknesses between (0.5-3) µm and surface doping concentrations in the range 2 x 10(19) cm-3- 4 x 10(18) cm-3; while the n++n+p structure a maximum efficiency of η≈ 26.0% was identified for an even wider range of emitter profiles. |
publishDate |
2009 |
dc.date.none.fl_str_mv |
2009-03-01 |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392009000100006 |
url |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392009000100006 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
10.1590/S1516-14392009000100006 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
text/html |
dc.publisher.none.fl_str_mv |
ABM, ABC, ABPol |
publisher.none.fl_str_mv |
ABM, ABC, ABPol |
dc.source.none.fl_str_mv |
Materials Research v.12 n.1 2009 reponame:Materials research (São Carlos. Online) instname:Universidade Federal de São Carlos (UFSCAR) instacron:ABM ABC ABPOL |
instname_str |
Universidade Federal de São Carlos (UFSCAR) |
instacron_str |
ABM ABC ABPOL |
institution |
ABM ABC ABPOL |
reponame_str |
Materials research (São Carlos. Online) |
collection |
Materials research (São Carlos. Online) |
repository.name.fl_str_mv |
Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR) |
repository.mail.fl_str_mv |
dedz@power.ufscar.br |
_version_ |
1754212659240108032 |