Optimization of low temperature RF-magnetron sputtering of indium tin oxide films for solar cell applications

• Autor(a) principal: Sousa, M.G.
• Data de Publicação: 2019
• Outros Autores: da Cunha, A.F.
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
• Texto Completo: http://hdl.handle.net/10773/37450
• topic: Indium tin oxide (ITO); RF-magnetron sputtering; Argon working pressure; Substrate temperature; Plasma irradiation; Partial pressure of hydrogen

In this work we have studied the influence of argon working pressure, substrate temperature, low power plasma irradiation and partial pressure of hydrogen in the RF-magnetron sputtering of indium tin oxide (ITO) thin films on glass substrates. This work aims at identifying the best conditions to achieve good quality ITO films at low temperature for deposition on heat-sensitive substrates. Four sets of samples were prepared which were characterized by X-ray diffraction (XRD), Van der Pauw and transmittance measurements. It was found that structural, electrical and optical properties of the films depend strongly on the deposition parameters. ITO films with a thickness of ~300 nm, displaying a sheet resistance of 68 Ω/sq and average transmittance, in the visible range, of about 90% were produced performing the deposition at low pressure and at room temperature. However, further improvements in the sheet resistance up to a factor of 3 were obtained by decreasing a little more the argon working pressure or applying a low power plasma irradiation or adding a partial pressure of hydrogen to the working gas. Films produced at low working pressures are crystalline and have [222] preferential orientation. The conductivity and transmittance of these films are higher than those of films deposited at high pressures. The electrical resistivity of the ITO thin films decreased sharply either with low power plasma irradiation or the addition of a partial pressure of H2 to the working gas. All the films showed an average transmittance of over 80% in the visible range. Therefore, as a result of this work we established that the addition of a small partial pressure of H2 to the working gas during growth allowed us to achieve the main aim of depositing low resistivity ITO films at low substrate temperature suitable for the envisaged applications. At the same time, we concluded that this approach leads to a drastic reduction in the amount of target surface conditioning required every time a new target was installed because it turns the properties of the ITO films more independent of the target surface properties.