Hydrogen influence on gallium arsenide thin films prepared by rf-magnetron sputtering technique

• Autor(a) principal: Vilcarromero, J.
• Data de Publicação: 2006
• Outros Autores: Bustamante, R., Silva, José Humberto Dias da [UNESP]
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Institucional da UNESP
• Texto Completo: http://dx.doi.org/10.1590/S0103-97332006000600063; http://hdl.handle.net/11449/34093
• topic: hydrogen; gallium arsenide; rf-magnetron sputtering

We investigate the effect of the hydrogen intentional incorporation on the structural properties of the amorphous gallium arsenide prepared by rf-magnetron sputtering technique. The properties of the non-hydrogenated films are: band gap of 1.4 eV (E-04), Urbach energy of 110 meV, stoichiometric composition ([As]/[Ga] = 0.50), and dark conductivity of about 3.2 x 10(-5) (Omega.cm)(-1). Hydrogen was incorporated in the films by the introduction of an electronically controlled H-2 flux during deposition, keeping constant the other deposition parameters. It was observed that small hydrogen incorporation produces a great change in the structural properties of the films. The main changes result from the formation of GaAs nanocrystals with mean sizes of about 7 nm into the amorphous network.