Hydrogen influence on gallium arsenide thin films prepared by rf-magnetron sputtering technique

Detalhes bibliográficos
Autor(a) principal: Vilcarromero,J.
Data de Publicação: 2006
Outros Autores: Bustamante,R., Silva,J.H.D. da
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Brazilian Journal of Physics
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000600063
Resumo: We investigate the effect of the hydrogen intentional incorporation on the structural properties of the amorphous gallium arsenide prepared by rf-magnetron sputtering technique. The properties of the non-hydrogenated films are: band gap of 1.4 eV (E04), Urbach energy of 110 meV, stoichiometric composition ([As]/[Ga] = 0.50), and dark conductivity of about 3.2 x 10-5 (omega.cm)-1. Hydrogen was incorporated in the films by the introduction of an electronically controlled H2 flux during deposition, keeping constant the other deposition parameters. It was observed that small hydrogen incorporation produces a great change in the structural properties of the films. The main changes result from the formation of GaAs nanocrystals with mean sizes of about 7 nm into the amorphous network.
id SBF-2_94883370c797d4ce920e66b9dbdf1d67
oai_identifier_str oai:scielo:S0103-97332006000600063
network_acronym_str SBF-2
network_name_str Brazilian Journal of Physics
repository_id_str
spelling Hydrogen influence on gallium arsenide thin films prepared by rf-magnetron sputtering techniqueHydrogenGallium arsenideRF-magnetron sputteringWe investigate the effect of the hydrogen intentional incorporation on the structural properties of the amorphous gallium arsenide prepared by rf-magnetron sputtering technique. The properties of the non-hydrogenated films are: band gap of 1.4 eV (E04), Urbach energy of 110 meV, stoichiometric composition ([As]/[Ga] = 0.50), and dark conductivity of about 3.2 x 10-5 (omega.cm)-1. Hydrogen was incorporated in the films by the introduction of an electronically controlled H2 flux during deposition, keeping constant the other deposition parameters. It was observed that small hydrogen incorporation produces a great change in the structural properties of the films. The main changes result from the formation of GaAs nanocrystals with mean sizes of about 7 nm into the amorphous network.Sociedade Brasileira de Física2006-09-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000600063Brazilian Journal of Physics v.36 n.3b 2006reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97332006000600063info:eu-repo/semantics/openAccessVilcarromero,J.Bustamante,R.Silva,J.H.D. daeng2006-11-29T00:00:00Zoai:scielo:S0103-97332006000600063Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2006-11-29T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false
dc.title.none.fl_str_mv Hydrogen influence on gallium arsenide thin films prepared by rf-magnetron sputtering technique
title Hydrogen influence on gallium arsenide thin films prepared by rf-magnetron sputtering technique
spellingShingle Hydrogen influence on gallium arsenide thin films prepared by rf-magnetron sputtering technique
Vilcarromero,J.
Hydrogen
Gallium arsenide
RF-magnetron sputtering
title_short Hydrogen influence on gallium arsenide thin films prepared by rf-magnetron sputtering technique
title_full Hydrogen influence on gallium arsenide thin films prepared by rf-magnetron sputtering technique
title_fullStr Hydrogen influence on gallium arsenide thin films prepared by rf-magnetron sputtering technique
title_full_unstemmed Hydrogen influence on gallium arsenide thin films prepared by rf-magnetron sputtering technique
title_sort Hydrogen influence on gallium arsenide thin films prepared by rf-magnetron sputtering technique
author Vilcarromero,J.
author_facet Vilcarromero,J.
Bustamante,R.
Silva,J.H.D. da
author_role author
author2 Bustamante,R.
Silva,J.H.D. da
author2_role author
author
dc.contributor.author.fl_str_mv Vilcarromero,J.
Bustamante,R.
Silva,J.H.D. da
dc.subject.por.fl_str_mv Hydrogen
Gallium arsenide
RF-magnetron sputtering
topic Hydrogen
Gallium arsenide
RF-magnetron sputtering
description We investigate the effect of the hydrogen intentional incorporation on the structural properties of the amorphous gallium arsenide prepared by rf-magnetron sputtering technique. The properties of the non-hydrogenated films are: band gap of 1.4 eV (E04), Urbach energy of 110 meV, stoichiometric composition ([As]/[Ga] = 0.50), and dark conductivity of about 3.2 x 10-5 (omega.cm)-1. Hydrogen was incorporated in the films by the introduction of an electronically controlled H2 flux during deposition, keeping constant the other deposition parameters. It was observed that small hydrogen incorporation produces a great change in the structural properties of the films. The main changes result from the formation of GaAs nanocrystals with mean sizes of about 7 nm into the amorphous network.
publishDate 2006
dc.date.none.fl_str_mv 2006-09-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000600063
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332006000600063
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/S0103-97332006000600063
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv Sociedade Brasileira de Física
publisher.none.fl_str_mv Sociedade Brasileira de Física
dc.source.none.fl_str_mv Brazilian Journal of Physics v.36 n.3b 2006
reponame:Brazilian Journal of Physics
instname:Sociedade Brasileira de Física (SBF)
instacron:SBF
instname_str Sociedade Brasileira de Física (SBF)
instacron_str SBF
institution SBF
reponame_str Brazilian Journal of Physics
collection Brazilian Journal of Physics
repository.name.fl_str_mv Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)
repository.mail.fl_str_mv sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br
_version_ 1754734863381954560

Registros relacionados