Optical lithography patterning of SiO2 layers for interface passivation of thin film solar cells

• Autor(a) principal: Bose, Sourav
• Data de Publicação: 2018
• Outros Autores: Cunha, José M. V., Suresh, Sunil, Wild, Jessica de, Lopes, Tomás S., Barbosa, João R. S., Silva, Ricardo, Borme, Jérôme, Fernandes, Paulo A., Vermang, Bart, Salomé, Pedro M. P.
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
• Texto Completo: http://hdl.handle.net/10773/30564
• topic: Thin film solar cells; Cu(In,Ga)Se2 (CIGS); Defects passivation; Semiconductors; Optoelectronics

Ultrathin Cu(In,Ga)Se2 solar cells are a promising way to reduce costs and to increase the electrical performance of thin film solar cells. In this work, we develop an optical lithography process that can produce sub-micrometer contacts in a SiO2 passivation layer at the CIGS rear contact. Furthermore, an optimization of the patterning dimensions reveals constrains over the features sizes. High passivation areas of the rear contact are needed to passivate the CIGS interface so that high performing solar cells can be obtained. However, these dimensions should not be achieved by using long distances between the contacts as they lead to poor electrical performance due to poor carrier extraction. This study expands the choice of passivation materials already known for ultrathin solar cells and its fabrication techniques.