Optimization of deposition parameters for thin silicon films on flexible substrates in a hot-wire chemical vapor deposition reactor

Detalhes bibliográficos
Autor(a) principal: Alpuim, P.
Data de Publicação: 2006
Outros Autores: Ribeiro, M., Filonovich, Sergej
Idioma: eng
Título da fonte: Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
Texto Completo: https://hdl.handle.net/1822/5554
Resumo: This paper studies the deposition of thin silicon films from silane on plastic substrates in a recently build hot-wire chemical vapor deposition reactor. Hydrogen dilution of silane was used to induce amorphous-to-nanocrystalline phase transition. Thin-film deposition rate, r(d), is roughly proportional to silane concentration during deposition but the proportionality factor depends on filament temperature, T-fil. At T-fil similar to 2500 degrees C (1900 degrees C), r(d) increases from 2.1 angstrom/s (1.2 angstrom/s) at 97% H-2 dilution to 14.5 angstrom/s (10.7 angstrom/s) for films deposited from pure silane. At T-fil similar to 2500 degrees C, films deposited under 80% H-2 dilution were amorphous, under 90% H-2 dilution the crystalline fraction was X-C = 49.4% and under 95% H-2 dilution, X-C = 52.8%. At T-fil similar to 1900 degrees C, samples were amorphous up to similar to 95% H-2 dilution where a crystalline fraction of 22.3% was measured. Films with amorphous structure have sigma(d) similar to 10(-10)-10(-9) Omega(-1.)cm(-1) while those with a measured crystalline fraction have sigma(d)similar to 10(-7)-10(-5) Omega(-1)cm(-1), depending on the amount of crystalline fraction and grain size. Films with lower sigma(d) have optical band gap in the range similar to 1.85-1.9 eV, typical of hydrogenated amorphous silicon, while those with higher sigma(d) have larger optical band gap (similar to 2 eV), typical of hydrogenated nanocrystalline silicon. Adhesion of the films to the plastic substrate was good, as they survived bending to small radius of curvature (< 1 mm) without peeling. Structural, optical and transport properties were similar on films deposited both on PEN and on glass under the same deposition conditions.
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spelling Optimization of deposition parameters for thin silicon films on flexible substrates in a hot-wire chemical vapor deposition reactorNanocrystalline siliconHot-wire CVDFlexible electronicsThin-film solar cellScience & TechnologyThis paper studies the deposition of thin silicon films from silane on plastic substrates in a recently build hot-wire chemical vapor deposition reactor. Hydrogen dilution of silane was used to induce amorphous-to-nanocrystalline phase transition. Thin-film deposition rate, r(d), is roughly proportional to silane concentration during deposition but the proportionality factor depends on filament temperature, T-fil. At T-fil similar to 2500 degrees C (1900 degrees C), r(d) increases from 2.1 angstrom/s (1.2 angstrom/s) at 97% H-2 dilution to 14.5 angstrom/s (10.7 angstrom/s) for films deposited from pure silane. At T-fil similar to 2500 degrees C, films deposited under 80% H-2 dilution were amorphous, under 90% H-2 dilution the crystalline fraction was X-C = 49.4% and under 95% H-2 dilution, X-C = 52.8%. At T-fil similar to 1900 degrees C, samples were amorphous up to similar to 95% H-2 dilution where a crystalline fraction of 22.3% was measured. Films with amorphous structure have sigma(d) similar to 10(-10)-10(-9) Omega(-1.)cm(-1) while those with a measured crystalline fraction have sigma(d)similar to 10(-7)-10(-5) Omega(-1)cm(-1), depending on the amount of crystalline fraction and grain size. Films with lower sigma(d) have optical band gap in the range similar to 1.85-1.9 eV, typical of hydrogenated amorphous silicon, while those with higher sigma(d) have larger optical band gap (similar to 2 eV), typical of hydrogenated nanocrystalline silicon. Adhesion of the films to the plastic substrate was good, as they survived bending to small radius of curvature (< 1 mm) without peeling. Structural, optical and transport properties were similar on films deposited both on PEN and on glass under the same deposition conditions.Fundação para a Ciência e a Tecnologia (FCT)Trans Tech PublicationsUniversidade do MinhoAlpuim, P.Ribeiro, M.Filonovich, Sergej20062006-01-01T00:00:00Zconference paperinfo:eu-repo/semantics/publishedVersionapplication/pdfhttps://hdl.handle.net/1822/5554engAlpuim, P., Ribeiro, M., & Filonovich, S. (2006, May 15). Optimization of Deposition Parameters for Thin Silicon Films on Flexible Substrates in a Hot-Wire Chemical Vapor Deposition Reactor. Materials Science Forum. Trans Tech Publications, Ltd. http://doi.org/10.4028/www.scientific.net/msf.514-516.47597808784940260255-547610.4028/www.scientific.net/msf.514-516.475http://doi.org/10.4028/www.scientific.net/msf.514-516.475info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-09-07T01:32:30Zoai:repositorium.sdum.uminho.pt:1822/5554Portal AgregadorONGhttps://www.rcaap.pt/oai/openairemluisa.alvim@gmail.comopendoar:71602024-09-07T01:32:30Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse
dc.title.none.fl_str_mv Optimization of deposition parameters for thin silicon films on flexible substrates in a hot-wire chemical vapor deposition reactor
title Optimization of deposition parameters for thin silicon films on flexible substrates in a hot-wire chemical vapor deposition reactor
spellingShingle Optimization of deposition parameters for thin silicon films on flexible substrates in a hot-wire chemical vapor deposition reactor
Alpuim, P.
Nanocrystalline silicon
Hot-wire CVD
Flexible electronics
Thin-film solar cell
Science & Technology
title_short Optimization of deposition parameters for thin silicon films on flexible substrates in a hot-wire chemical vapor deposition reactor
title_full Optimization of deposition parameters for thin silicon films on flexible substrates in a hot-wire chemical vapor deposition reactor
title_fullStr Optimization of deposition parameters for thin silicon films on flexible substrates in a hot-wire chemical vapor deposition reactor
title_full_unstemmed Optimization of deposition parameters for thin silicon films on flexible substrates in a hot-wire chemical vapor deposition reactor
title_sort Optimization of deposition parameters for thin silicon films on flexible substrates in a hot-wire chemical vapor deposition reactor
author Alpuim, P.
author_facet Alpuim, P.
Ribeiro, M.
Filonovich, Sergej
author_role author
author2 Ribeiro, M.
Filonovich, Sergej
author2_role author
author
dc.contributor.none.fl_str_mv Universidade do Minho
dc.contributor.author.fl_str_mv Alpuim, P.
Ribeiro, M.
Filonovich, Sergej
dc.subject.por.fl_str_mv Nanocrystalline silicon
Hot-wire CVD
Flexible electronics
Thin-film solar cell
Science & Technology
topic Nanocrystalline silicon
Hot-wire CVD
Flexible electronics
Thin-film solar cell
Science & Technology
description This paper studies the deposition of thin silicon films from silane on plastic substrates in a recently build hot-wire chemical vapor deposition reactor. Hydrogen dilution of silane was used to induce amorphous-to-nanocrystalline phase transition. Thin-film deposition rate, r(d), is roughly proportional to silane concentration during deposition but the proportionality factor depends on filament temperature, T-fil. At T-fil similar to 2500 degrees C (1900 degrees C), r(d) increases from 2.1 angstrom/s (1.2 angstrom/s) at 97% H-2 dilution to 14.5 angstrom/s (10.7 angstrom/s) for films deposited from pure silane. At T-fil similar to 2500 degrees C, films deposited under 80% H-2 dilution were amorphous, under 90% H-2 dilution the crystalline fraction was X-C = 49.4% and under 95% H-2 dilution, X-C = 52.8%. At T-fil similar to 1900 degrees C, samples were amorphous up to similar to 95% H-2 dilution where a crystalline fraction of 22.3% was measured. Films with amorphous structure have sigma(d) similar to 10(-10)-10(-9) Omega(-1.)cm(-1) while those with a measured crystalline fraction have sigma(d)similar to 10(-7)-10(-5) Omega(-1)cm(-1), depending on the amount of crystalline fraction and grain size. Films with lower sigma(d) have optical band gap in the range similar to 1.85-1.9 eV, typical of hydrogenated amorphous silicon, while those with higher sigma(d) have larger optical band gap (similar to 2 eV), typical of hydrogenated nanocrystalline silicon. Adhesion of the films to the plastic substrate was good, as they survived bending to small radius of curvature (< 1 mm) without peeling. Structural, optical and transport properties were similar on films deposited both on PEN and on glass under the same deposition conditions.
publishDate 2006
dc.date.none.fl_str_mv 2006
2006-01-01T00:00:00Z
dc.type.driver.fl_str_mv conference paper
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
status_str publishedVersion
dc.identifier.uri.fl_str_mv https://hdl.handle.net/1822/5554
url https://hdl.handle.net/1822/5554
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv Alpuim, P., Ribeiro, M., & Filonovich, S. (2006, May 15). Optimization of Deposition Parameters for Thin Silicon Films on Flexible Substrates in a Hot-Wire Chemical Vapor Deposition Reactor. Materials Science Forum. Trans Tech Publications, Ltd. http://doi.org/10.4028/www.scientific.net/msf.514-516.475
9780878494026
0255-5476
10.4028/www.scientific.net/msf.514-516.475
http://doi.org/10.4028/www.scientific.net/msf.514-516.475
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Trans Tech Publications
publisher.none.fl_str_mv Trans Tech Publications
dc.source.none.fl_str_mv reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron:RCAAP
instname_str Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
instacron_str RCAAP
institution RCAAP
reponame_str Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
collection Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)
repository.name.fl_str_mv Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação
repository.mail.fl_str_mv mluisa.alvim@gmail.com
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