Optimization of deposition parameters for thin silicon films on flexible substrates in a hot-wire chemical vapor deposition reactor
Autor(a) principal: | |
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Data de Publicação: | 2006 |
Outros Autores: | , |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | https://hdl.handle.net/1822/5554 |
Resumo: | This paper studies the deposition of thin silicon films from silane on plastic substrates in a recently build hot-wire chemical vapor deposition reactor. Hydrogen dilution of silane was used to induce amorphous-to-nanocrystalline phase transition. Thin-film deposition rate, r(d), is roughly proportional to silane concentration during deposition but the proportionality factor depends on filament temperature, T-fil. At T-fil similar to 2500 degrees C (1900 degrees C), r(d) increases from 2.1 angstrom/s (1.2 angstrom/s) at 97% H-2 dilution to 14.5 angstrom/s (10.7 angstrom/s) for films deposited from pure silane. At T-fil similar to 2500 degrees C, films deposited under 80% H-2 dilution were amorphous, under 90% H-2 dilution the crystalline fraction was X-C = 49.4% and under 95% H-2 dilution, X-C = 52.8%. At T-fil similar to 1900 degrees C, samples were amorphous up to similar to 95% H-2 dilution where a crystalline fraction of 22.3% was measured. Films with amorphous structure have sigma(d) similar to 10(-10)-10(-9) Omega(-1.)cm(-1) while those with a measured crystalline fraction have sigma(d)similar to 10(-7)-10(-5) Omega(-1)cm(-1), depending on the amount of crystalline fraction and grain size. Films with lower sigma(d) have optical band gap in the range similar to 1.85-1.9 eV, typical of hydrogenated amorphous silicon, while those with higher sigma(d) have larger optical band gap (similar to 2 eV), typical of hydrogenated nanocrystalline silicon. Adhesion of the films to the plastic substrate was good, as they survived bending to small radius of curvature (< 1 mm) without peeling. Structural, optical and transport properties were similar on films deposited both on PEN and on glass under the same deposition conditions. |
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Optimization of deposition parameters for thin silicon films on flexible substrates in a hot-wire chemical vapor deposition reactorNanocrystalline siliconHot-wire CVDFlexible electronicsThin-film solar cellScience & TechnologyThis paper studies the deposition of thin silicon films from silane on plastic substrates in a recently build hot-wire chemical vapor deposition reactor. Hydrogen dilution of silane was used to induce amorphous-to-nanocrystalline phase transition. Thin-film deposition rate, r(d), is roughly proportional to silane concentration during deposition but the proportionality factor depends on filament temperature, T-fil. At T-fil similar to 2500 degrees C (1900 degrees C), r(d) increases from 2.1 angstrom/s (1.2 angstrom/s) at 97% H-2 dilution to 14.5 angstrom/s (10.7 angstrom/s) for films deposited from pure silane. At T-fil similar to 2500 degrees C, films deposited under 80% H-2 dilution were amorphous, under 90% H-2 dilution the crystalline fraction was X-C = 49.4% and under 95% H-2 dilution, X-C = 52.8%. At T-fil similar to 1900 degrees C, samples were amorphous up to similar to 95% H-2 dilution where a crystalline fraction of 22.3% was measured. Films with amorphous structure have sigma(d) similar to 10(-10)-10(-9) Omega(-1.)cm(-1) while those with a measured crystalline fraction have sigma(d)similar to 10(-7)-10(-5) Omega(-1)cm(-1), depending on the amount of crystalline fraction and grain size. Films with lower sigma(d) have optical band gap in the range similar to 1.85-1.9 eV, typical of hydrogenated amorphous silicon, while those with higher sigma(d) have larger optical band gap (similar to 2 eV), typical of hydrogenated nanocrystalline silicon. Adhesion of the films to the plastic substrate was good, as they survived bending to small radius of curvature (< 1 mm) without peeling. Structural, optical and transport properties were similar on films deposited both on PEN and on glass under the same deposition conditions.Fundação para a Ciência e a Tecnologia (FCT)Trans Tech PublicationsUniversidade do MinhoAlpuim, P.Ribeiro, M.Filonovich, Sergej20062006-01-01T00:00:00Zconference paperinfo:eu-repo/semantics/publishedVersionapplication/pdfhttps://hdl.handle.net/1822/5554engAlpuim, P., Ribeiro, M., & Filonovich, S. (2006, May 15). Optimization of Deposition Parameters for Thin Silicon Films on Flexible Substrates in a Hot-Wire Chemical Vapor Deposition Reactor. Materials Science Forum. Trans Tech Publications, Ltd. http://doi.org/10.4028/www.scientific.net/msf.514-516.47597808784940260255-547610.4028/www.scientific.net/msf.514-516.475http://doi.org/10.4028/www.scientific.net/msf.514-516.475info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-09-07T01:32:30Zoai:repositorium.sdum.uminho.pt:1822/5554Portal AgregadorONGhttps://www.rcaap.pt/oai/openairemluisa.alvim@gmail.comopendoar:71602024-09-07T01:32:30Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Optimization of deposition parameters for thin silicon films on flexible substrates in a hot-wire chemical vapor deposition reactor |
title |
Optimization of deposition parameters for thin silicon films on flexible substrates in a hot-wire chemical vapor deposition reactor |
spellingShingle |
Optimization of deposition parameters for thin silicon films on flexible substrates in a hot-wire chemical vapor deposition reactor Alpuim, P. Nanocrystalline silicon Hot-wire CVD Flexible electronics Thin-film solar cell Science & Technology |
title_short |
Optimization of deposition parameters for thin silicon films on flexible substrates in a hot-wire chemical vapor deposition reactor |
title_full |
Optimization of deposition parameters for thin silicon films on flexible substrates in a hot-wire chemical vapor deposition reactor |
title_fullStr |
Optimization of deposition parameters for thin silicon films on flexible substrates in a hot-wire chemical vapor deposition reactor |
title_full_unstemmed |
Optimization of deposition parameters for thin silicon films on flexible substrates in a hot-wire chemical vapor deposition reactor |
title_sort |
Optimization of deposition parameters for thin silicon films on flexible substrates in a hot-wire chemical vapor deposition reactor |
author |
Alpuim, P. |
author_facet |
Alpuim, P. Ribeiro, M. Filonovich, Sergej |
author_role |
author |
author2 |
Ribeiro, M. Filonovich, Sergej |
author2_role |
author author |
dc.contributor.none.fl_str_mv |
Universidade do Minho |
dc.contributor.author.fl_str_mv |
Alpuim, P. Ribeiro, M. Filonovich, Sergej |
dc.subject.por.fl_str_mv |
Nanocrystalline silicon Hot-wire CVD Flexible electronics Thin-film solar cell Science & Technology |
topic |
Nanocrystalline silicon Hot-wire CVD Flexible electronics Thin-film solar cell Science & Technology |
description |
This paper studies the deposition of thin silicon films from silane on plastic substrates in a recently build hot-wire chemical vapor deposition reactor. Hydrogen dilution of silane was used to induce amorphous-to-nanocrystalline phase transition. Thin-film deposition rate, r(d), is roughly proportional to silane concentration during deposition but the proportionality factor depends on filament temperature, T-fil. At T-fil similar to 2500 degrees C (1900 degrees C), r(d) increases from 2.1 angstrom/s (1.2 angstrom/s) at 97% H-2 dilution to 14.5 angstrom/s (10.7 angstrom/s) for films deposited from pure silane. At T-fil similar to 2500 degrees C, films deposited under 80% H-2 dilution were amorphous, under 90% H-2 dilution the crystalline fraction was X-C = 49.4% and under 95% H-2 dilution, X-C = 52.8%. At T-fil similar to 1900 degrees C, samples were amorphous up to similar to 95% H-2 dilution where a crystalline fraction of 22.3% was measured. Films with amorphous structure have sigma(d) similar to 10(-10)-10(-9) Omega(-1.)cm(-1) while those with a measured crystalline fraction have sigma(d)similar to 10(-7)-10(-5) Omega(-1)cm(-1), depending on the amount of crystalline fraction and grain size. Films with lower sigma(d) have optical band gap in the range similar to 1.85-1.9 eV, typical of hydrogenated amorphous silicon, while those with higher sigma(d) have larger optical band gap (similar to 2 eV), typical of hydrogenated nanocrystalline silicon. Adhesion of the films to the plastic substrate was good, as they survived bending to small radius of curvature (< 1 mm) without peeling. Structural, optical and transport properties were similar on films deposited both on PEN and on glass under the same deposition conditions. |
publishDate |
2006 |
dc.date.none.fl_str_mv |
2006 2006-01-01T00:00:00Z |
dc.type.driver.fl_str_mv |
conference paper |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
https://hdl.handle.net/1822/5554 |
url |
https://hdl.handle.net/1822/5554 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Alpuim, P., Ribeiro, M., & Filonovich, S. (2006, May 15). Optimization of Deposition Parameters for Thin Silicon Films on Flexible Substrates in a Hot-Wire Chemical Vapor Deposition Reactor. Materials Science Forum. Trans Tech Publications, Ltd. http://doi.org/10.4028/www.scientific.net/msf.514-516.475 9780878494026 0255-5476 10.4028/www.scientific.net/msf.514-516.475 http://doi.org/10.4028/www.scientific.net/msf.514-516.475 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.publisher.none.fl_str_mv |
Trans Tech Publications |
publisher.none.fl_str_mv |
Trans Tech Publications |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
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Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
instacron_str |
RCAAP |
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RCAAP |
reponame_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
collection |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
repository.name.fl_str_mv |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
repository.mail.fl_str_mv |
mluisa.alvim@gmail.com |
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1817545317289033728 |