Effect of argon ion energy on the performance of silicon nitridemultilayer permeation barriers grown by hot-wire CVD on polymers
Autor(a) principal: | |
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Data de Publicação: | 2015 |
Outros Autores: | , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | http://hdl.handle.net/1822/39804 |
Resumo: | One of the authors (S.M.) acknowledges Direction des Relations Extérieures of Ecole Polytechnique for financial support. |
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Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
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Effect of argon ion energy on the performance of silicon nitridemultilayer permeation barriers grown by hot-wire CVD on polymersSilicon nitrideHot-wire CVDLow-temperature depositionAr plasma treatmentPermeation barrierPolymer substrateCiências Naturais::Ciências FísicasScience & TechnologyOne of the authors (S.M.) acknowledges Direction des Relations Extérieures of Ecole Polytechnique for financial support.Permeation barriers for organic electronic devices on polymer flexible substrates were realized by combining stacked silicon nitride (SiNx) single layers (50 nm thick) deposited by hot-wire chemical vapor deposition process at low-temperature (~100°C) with a specific argon plasma treatment between two successive layers. Several plasma parameters (RF power density, pressure, treatment duration) as well as the number of single layers have been explored in order to improve the quality of permeation barriers deposited on polyethylene terephthalate. In this work, maximumion energy was highlighted as the crucial parameter making it possible to minimize water vapor transmission rate (WVTR), as determined by the electrical calcium test method, all the other parameters being kept fixed. Thus fixing the plasma treatment duration at 8 min for a stack of two SiNx single layers, a minimum WVTR of 5 × 10−4 g/(m2 day), measured at room temperature, was found for a maximum ion energy of ~30 eV. This minimum WVTR value was reduced to 7 × 10−5 g/(m2 day) for a stack of five SiNx single layers. The reduction in the permeability is interpreted as due to the rearrangement of atoms at the interfaces when average transferred ion energy to target atoms exceeds threshold displacement energy.The authors are grateful to Dr. R. Cortes (PMC, Ecole Polytechnique) for XRR analysis, to Dr. P. Chapon (HORIBA Jobin Yvon) for GD-OES analysis and Dr. J. Leroy (CEA Saclay) for XPS analysis. This work was partly supported by the PICS (FrenchPortuguese) project No. 5336. One of the authors (S.M.) acknowledges Direction des Relations Extérieures of Ecole Polytechnique for financial support.ElsevierUniversidade do MinhoAlpuim, P.Majee, S.Cerqueira, M. F.Tondelier, D.Geffroy, B.Bonnassieux, Y.Bourée, J. E.20152015-01-01T00:00:00Zinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/1822/39804engAlpuim, P., Majee, S., Cerqueira, M. F., Tondelier, D., Geffroy, B., Bonnassieux, Y., & Bouree, J. E. (2015). Effect of argon ion energy on the performance of silicon nitride multilayer permeation barriers grown by hot-wire CVD on polymers. Thin Solid Films, 595, 258-265. doi: 10.1016/j.tsf.2015.09.0480040-609010.1016/j.tsf.2015.09.048http://www.sciencedirect.com/science/article/pii/S0040609015009268info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-05-11T05:05:58Zoai:repositorium.sdum.uminho.pt:1822/39804Portal AgregadorONGhttps://www.rcaap.pt/oai/openairemluisa.alvim@gmail.comopendoar:71602024-05-11T05:05:58Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
Effect of argon ion energy on the performance of silicon nitridemultilayer permeation barriers grown by hot-wire CVD on polymers |
title |
Effect of argon ion energy on the performance of silicon nitridemultilayer permeation barriers grown by hot-wire CVD on polymers |
spellingShingle |
Effect of argon ion energy on the performance of silicon nitridemultilayer permeation barriers grown by hot-wire CVD on polymers Alpuim, P. Silicon nitride Hot-wire CVD Low-temperature deposition Ar plasma treatment Permeation barrier Polymer substrate Ciências Naturais::Ciências Físicas Science & Technology |
title_short |
Effect of argon ion energy on the performance of silicon nitridemultilayer permeation barriers grown by hot-wire CVD on polymers |
title_full |
Effect of argon ion energy on the performance of silicon nitridemultilayer permeation barriers grown by hot-wire CVD on polymers |
title_fullStr |
Effect of argon ion energy on the performance of silicon nitridemultilayer permeation barriers grown by hot-wire CVD on polymers |
title_full_unstemmed |
Effect of argon ion energy on the performance of silicon nitridemultilayer permeation barriers grown by hot-wire CVD on polymers |
title_sort |
Effect of argon ion energy on the performance of silicon nitridemultilayer permeation barriers grown by hot-wire CVD on polymers |
author |
Alpuim, P. |
author_facet |
Alpuim, P. Majee, S. Cerqueira, M. F. Tondelier, D. Geffroy, B. Bonnassieux, Y. Bourée, J. E. |
author_role |
author |
author2 |
Majee, S. Cerqueira, M. F. Tondelier, D. Geffroy, B. Bonnassieux, Y. Bourée, J. E. |
author2_role |
author author author author author author |
dc.contributor.none.fl_str_mv |
Universidade do Minho |
dc.contributor.author.fl_str_mv |
Alpuim, P. Majee, S. Cerqueira, M. F. Tondelier, D. Geffroy, B. Bonnassieux, Y. Bourée, J. E. |
dc.subject.por.fl_str_mv |
Silicon nitride Hot-wire CVD Low-temperature deposition Ar plasma treatment Permeation barrier Polymer substrate Ciências Naturais::Ciências Físicas Science & Technology |
topic |
Silicon nitride Hot-wire CVD Low-temperature deposition Ar plasma treatment Permeation barrier Polymer substrate Ciências Naturais::Ciências Físicas Science & Technology |
description |
One of the authors (S.M.) acknowledges Direction des Relations Extérieures of Ecole Polytechnique for financial support. |
publishDate |
2015 |
dc.date.none.fl_str_mv |
2015 2015-01-01T00:00:00Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/1822/39804 |
url |
http://hdl.handle.net/1822/39804 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
Alpuim, P., Majee, S., Cerqueira, M. F., Tondelier, D., Geffroy, B., Bonnassieux, Y., & Bouree, J. E. (2015). Effect of argon ion energy on the performance of silicon nitride multilayer permeation barriers grown by hot-wire CVD on polymers. Thin Solid Films, 595, 258-265. doi: 10.1016/j.tsf.2015.09.048 0040-6090 10.1016/j.tsf.2015.09.048 http://www.sciencedirect.com/science/article/pii/S0040609015009268 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.publisher.none.fl_str_mv |
Elsevier |
publisher.none.fl_str_mv |
Elsevier |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
instname_str |
Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
instacron_str |
RCAAP |
institution |
RCAAP |
reponame_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
collection |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
repository.name.fl_str_mv |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
repository.mail.fl_str_mv |
mluisa.alvim@gmail.com |
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1817544515095887872 |