A morphological and electronic study of ultrathin rear passivated Cu(In,Ga)Se2 solar cells
Autor(a) principal: | |
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Data de Publicação: | 2019 |
Outros Autores: | , , , , , , , , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
Texto Completo: | http://hdl.handle.net/10773/30445 |
Resumo: | The effects of introducing a passivation layer at the rear of ultrathin Copper Indium Gallium di-Selenide Cu(In,Ga)Se2 (CIGS) solar cells is studied. Point contact structures have been created on 25 nm Al2O3 layer using e-beam lithography. Reference solar cells with ultrathin CIGS layers provide devices with average values of light to power conversion efficiency of 8.1 % while for passivated cells values reached 9.5 %. Electronic properties of passivated cells have been studied before, but the influence of growing the CIGS on Al2O3 with point contacts was still unknown from a structural and morphological point of view. Scanning Electron Microscopy, X-ray Diffraction and Raman spectroscopy measurements were performed. These measurements revealed no significant morphological or structural differences in the CIGS layer for the passivated samples compared with reference samples. These results are in agreement with the similar values of carrier density (~8x1016 cm-3) and depletion region (~160 nm) extracted using electrical measurements. A detailed comparison between both sample types in terms of current-voltage, external quantum efficiency and photoluminescence measurements show very different optoelectronic behaviour which is indicative of a successful passivation. SCAPS simulations are done to explain the observed results in view of passivation of the rear interface. |
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A morphological and electronic study of ultrathin rear passivated Cu(In,Ga)Se2 solar cellsPassivationCopper Indium Gallium di-SelenideSolar cellsUltrathinAbsorberThin filmThe effects of introducing a passivation layer at the rear of ultrathin Copper Indium Gallium di-Selenide Cu(In,Ga)Se2 (CIGS) solar cells is studied. Point contact structures have been created on 25 nm Al2O3 layer using e-beam lithography. Reference solar cells with ultrathin CIGS layers provide devices with average values of light to power conversion efficiency of 8.1 % while for passivated cells values reached 9.5 %. Electronic properties of passivated cells have been studied before, but the influence of growing the CIGS on Al2O3 with point contacts was still unknown from a structural and morphological point of view. Scanning Electron Microscopy, X-ray Diffraction and Raman spectroscopy measurements were performed. These measurements revealed no significant morphological or structural differences in the CIGS layer for the passivated samples compared with reference samples. These results are in agreement with the similar values of carrier density (~8x1016 cm-3) and depletion region (~160 nm) extracted using electrical measurements. A detailed comparison between both sample types in terms of current-voltage, external quantum efficiency and photoluminescence measurements show very different optoelectronic behaviour which is indicative of a successful passivation. SCAPS simulations are done to explain the observed results in view of passivation of the rear interface.Elsevier2021-02-01T13:14:49Z2019-02-01T00:00:00Z2019-02-01info:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10773/30445eng0040-609010.1016/j.tsf.2018.12.028Bose, S.Cunha, J. M. V.Borme, J.Chen, W. C.Nilsson, N. S.Teixeira, J. P.Gaspar, J.Leitão, J. P.Edoff, M.Fernandes, P. A.Salomé, P. M. P.info:eu-repo/semantics/openAccessreponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos)instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãoinstacron:RCAAP2024-02-22T11:58:52Zoai:ria.ua.pt:10773/30445Portal AgregadorONGhttps://www.rcaap.pt/oai/openaireopendoar:71602024-03-20T03:02:33.610008Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informaçãofalse |
dc.title.none.fl_str_mv |
A morphological and electronic study of ultrathin rear passivated Cu(In,Ga)Se2 solar cells |
title |
A morphological and electronic study of ultrathin rear passivated Cu(In,Ga)Se2 solar cells |
spellingShingle |
A morphological and electronic study of ultrathin rear passivated Cu(In,Ga)Se2 solar cells Bose, S. Passivation Copper Indium Gallium di-Selenide Solar cells Ultrathin Absorber Thin film |
title_short |
A morphological and electronic study of ultrathin rear passivated Cu(In,Ga)Se2 solar cells |
title_full |
A morphological and electronic study of ultrathin rear passivated Cu(In,Ga)Se2 solar cells |
title_fullStr |
A morphological and electronic study of ultrathin rear passivated Cu(In,Ga)Se2 solar cells |
title_full_unstemmed |
A morphological and electronic study of ultrathin rear passivated Cu(In,Ga)Se2 solar cells |
title_sort |
A morphological and electronic study of ultrathin rear passivated Cu(In,Ga)Se2 solar cells |
author |
Bose, S. |
author_facet |
Bose, S. Cunha, J. M. V. Borme, J. Chen, W. C. Nilsson, N. S. Teixeira, J. P. Gaspar, J. Leitão, J. P. Edoff, M. Fernandes, P. A. Salomé, P. M. P. |
author_role |
author |
author2 |
Cunha, J. M. V. Borme, J. Chen, W. C. Nilsson, N. S. Teixeira, J. P. Gaspar, J. Leitão, J. P. Edoff, M. Fernandes, P. A. Salomé, P. M. P. |
author2_role |
author author author author author author author author author author |
dc.contributor.author.fl_str_mv |
Bose, S. Cunha, J. M. V. Borme, J. Chen, W. C. Nilsson, N. S. Teixeira, J. P. Gaspar, J. Leitão, J. P. Edoff, M. Fernandes, P. A. Salomé, P. M. P. |
dc.subject.por.fl_str_mv |
Passivation Copper Indium Gallium di-Selenide Solar cells Ultrathin Absorber Thin film |
topic |
Passivation Copper Indium Gallium di-Selenide Solar cells Ultrathin Absorber Thin film |
description |
The effects of introducing a passivation layer at the rear of ultrathin Copper Indium Gallium di-Selenide Cu(In,Ga)Se2 (CIGS) solar cells is studied. Point contact structures have been created on 25 nm Al2O3 layer using e-beam lithography. Reference solar cells with ultrathin CIGS layers provide devices with average values of light to power conversion efficiency of 8.1 % while for passivated cells values reached 9.5 %. Electronic properties of passivated cells have been studied before, but the influence of growing the CIGS on Al2O3 with point contacts was still unknown from a structural and morphological point of view. Scanning Electron Microscopy, X-ray Diffraction and Raman spectroscopy measurements were performed. These measurements revealed no significant morphological or structural differences in the CIGS layer for the passivated samples compared with reference samples. These results are in agreement with the similar values of carrier density (~8x1016 cm-3) and depletion region (~160 nm) extracted using electrical measurements. A detailed comparison between both sample types in terms of current-voltage, external quantum efficiency and photoluminescence measurements show very different optoelectronic behaviour which is indicative of a successful passivation. SCAPS simulations are done to explain the observed results in view of passivation of the rear interface. |
publishDate |
2019 |
dc.date.none.fl_str_mv |
2019-02-01T00:00:00Z 2019-02-01 2021-02-01T13:14:49Z |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://hdl.handle.net/10773/30445 |
url |
http://hdl.handle.net/10773/30445 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
0040-6090 10.1016/j.tsf.2018.12.028 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
application/pdf |
dc.publisher.none.fl_str_mv |
Elsevier |
publisher.none.fl_str_mv |
Elsevier |
dc.source.none.fl_str_mv |
reponame:Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) instname:Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação instacron:RCAAP |
instname_str |
Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
instacron_str |
RCAAP |
institution |
RCAAP |
reponame_str |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
collection |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) |
repository.name.fl_str_mv |
Repositório Científico de Acesso Aberto de Portugal (Repositórios Cientìficos) - Agência para a Sociedade do Conhecimento (UMIC) - FCT - Sociedade da Informação |
repository.mail.fl_str_mv |
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1799137680934567936 |