Description and characterization of a ECR plasma device developed for thin film deposition

Detalhes bibliográficos
Autor(a) principal: Matta,J.A.S. da
Data de Publicação: 2003
Outros Autores: Galvão,R.M.O., Ruchko,L., Fantini,M.C.A., Kiyohara,P.K.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Brazilian Journal of Physics
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332003000100011
Resumo: The design, construction, and characterization of an electron-cyclotron-resonance (ECR) plasma device and its utilization for growing AlN polycrystals are described in detail. The plasma density and electron temperature were measured by two types of Langmuir probes under different conditions of magnetic configuration and RF substrate polarization. For the investigated nitrogen plasmas, the electron temperature increases towards substrate holder and decreases with pressure. The magnetic configuration and plasma parameters required for successful growth of polycrystal aluminum nitride have been determined.
id SBF-2_012391d48bb32cb6772e71937abc38e3
oai_identifier_str oai:scielo:S0103-97332003000100011
network_acronym_str SBF-2
network_name_str Brazilian Journal of Physics
repository_id_str
spelling Description and characterization of a ECR plasma device developed for thin film depositionThe design, construction, and characterization of an electron-cyclotron-resonance (ECR) plasma device and its utilization for growing AlN polycrystals are described in detail. The plasma density and electron temperature were measured by two types of Langmuir probes under different conditions of magnetic configuration and RF substrate polarization. For the investigated nitrogen plasmas, the electron temperature increases towards substrate holder and decreases with pressure. The magnetic configuration and plasma parameters required for successful growth of polycrystal aluminum nitride have been determined.Sociedade Brasileira de Física2003-03-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332003000100011Brazilian Journal of Physics v.33 n.1 2003reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97332003000100011info:eu-repo/semantics/openAccessMatta,J.A.S. daGalvão,R.M.O.Ruchko,L.Fantini,M.C.A.Kiyohara,P.K.eng2003-04-23T00:00:00Zoai:scielo:S0103-97332003000100011Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2003-04-23T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false
dc.title.none.fl_str_mv Description and characterization of a ECR plasma device developed for thin film deposition
title Description and characterization of a ECR plasma device developed for thin film deposition
spellingShingle Description and characterization of a ECR plasma device developed for thin film deposition
Matta,J.A.S. da
title_short Description and characterization of a ECR plasma device developed for thin film deposition
title_full Description and characterization of a ECR plasma device developed for thin film deposition
title_fullStr Description and characterization of a ECR plasma device developed for thin film deposition
title_full_unstemmed Description and characterization of a ECR plasma device developed for thin film deposition
title_sort Description and characterization of a ECR plasma device developed for thin film deposition
author Matta,J.A.S. da
author_facet Matta,J.A.S. da
Galvão,R.M.O.
Ruchko,L.
Fantini,M.C.A.
Kiyohara,P.K.
author_role author
author2 Galvão,R.M.O.
Ruchko,L.
Fantini,M.C.A.
Kiyohara,P.K.
author2_role author
author
author
author
dc.contributor.author.fl_str_mv Matta,J.A.S. da
Galvão,R.M.O.
Ruchko,L.
Fantini,M.C.A.
Kiyohara,P.K.
description The design, construction, and characterization of an electron-cyclotron-resonance (ECR) plasma device and its utilization for growing AlN polycrystals are described in detail. The plasma density and electron temperature were measured by two types of Langmuir probes under different conditions of magnetic configuration and RF substrate polarization. For the investigated nitrogen plasmas, the electron temperature increases towards substrate holder and decreases with pressure. The magnetic configuration and plasma parameters required for successful growth of polycrystal aluminum nitride have been determined.
publishDate 2003
dc.date.none.fl_str_mv 2003-03-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332003000100011
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332003000100011
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/S0103-97332003000100011
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv Sociedade Brasileira de Física
publisher.none.fl_str_mv Sociedade Brasileira de Física
dc.source.none.fl_str_mv Brazilian Journal of Physics v.33 n.1 2003
reponame:Brazilian Journal of Physics
instname:Sociedade Brasileira de Física (SBF)
instacron:SBF
instname_str Sociedade Brasileira de Física (SBF)
instacron_str SBF
institution SBF
reponame_str Brazilian Journal of Physics
collection Brazilian Journal of Physics
repository.name.fl_str_mv Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)
repository.mail.fl_str_mv sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br
_version_ 1754734860120883200

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