Carbon doping of InAlAs layers grown by metalorganic vapor phase epitaxy
Autor(a) principal: | |
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Data de Publicação: | 2002 |
Outros Autores: | , , |
Tipo de documento: | Artigo |
Idioma: | eng |
Título da fonte: | Brazilian Journal of Physics |
Texto Completo: | http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200032 |
Resumo: | Carbon doped AlInAs layers grown by low pressure metalorganic vapor phase epitaxy are investigated as a function of growth temperature. Photoluminescence spectra show a significant drop in peak intensity as the growth temperature is reduced, due to the incorporation of non-radiative defects. It is shown that the C doping is not related to the deterioration of the optical properties of the layers. On the other hand, both the net hole concentration and the conductivity increase as the growth temperature is reduced due to a more efficient C incorporation and a lower incorporation of the passivating H atoms. |
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Brazilian Journal of Physics |
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Carbon doping of InAlAs layers grown by metalorganic vapor phase epitaxyCarbon doped AlInAs layers grown by low pressure metalorganic vapor phase epitaxy are investigated as a function of growth temperature. Photoluminescence spectra show a significant drop in peak intensity as the growth temperature is reduced, due to the incorporation of non-radiative defects. It is shown that the C doping is not related to the deterioration of the optical properties of the layers. On the other hand, both the net hole concentration and the conductivity increase as the growth temperature is reduced due to a more efficient C incorporation and a lower incorporation of the passivating H atoms.Sociedade Brasileira de Física2002-06-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200032Brazilian Journal of Physics v.32 n.2a 2002reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97332002000200032info:eu-repo/semantics/openAccessRibeiro,M. L. P.Yavich,B.Tribuzy,C. V. B.Souza,P. L.eng2002-11-26T00:00:00Zoai:scielo:S0103-97332002000200032Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2002-11-26T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false |
dc.title.none.fl_str_mv |
Carbon doping of InAlAs layers grown by metalorganic vapor phase epitaxy |
title |
Carbon doping of InAlAs layers grown by metalorganic vapor phase epitaxy |
spellingShingle |
Carbon doping of InAlAs layers grown by metalorganic vapor phase epitaxy Ribeiro,M. L. P. |
title_short |
Carbon doping of InAlAs layers grown by metalorganic vapor phase epitaxy |
title_full |
Carbon doping of InAlAs layers grown by metalorganic vapor phase epitaxy |
title_fullStr |
Carbon doping of InAlAs layers grown by metalorganic vapor phase epitaxy |
title_full_unstemmed |
Carbon doping of InAlAs layers grown by metalorganic vapor phase epitaxy |
title_sort |
Carbon doping of InAlAs layers grown by metalorganic vapor phase epitaxy |
author |
Ribeiro,M. L. P. |
author_facet |
Ribeiro,M. L. P. Yavich,B. Tribuzy,C. V. B. Souza,P. L. |
author_role |
author |
author2 |
Yavich,B. Tribuzy,C. V. B. Souza,P. L. |
author2_role |
author author author |
dc.contributor.author.fl_str_mv |
Ribeiro,M. L. P. Yavich,B. Tribuzy,C. V. B. Souza,P. L. |
description |
Carbon doped AlInAs layers grown by low pressure metalorganic vapor phase epitaxy are investigated as a function of growth temperature. Photoluminescence spectra show a significant drop in peak intensity as the growth temperature is reduced, due to the incorporation of non-radiative defects. It is shown that the C doping is not related to the deterioration of the optical properties of the layers. On the other hand, both the net hole concentration and the conductivity increase as the growth temperature is reduced due to a more efficient C incorporation and a lower incorporation of the passivating H atoms. |
publishDate |
2002 |
dc.date.none.fl_str_mv |
2002-06-01 |
dc.type.driver.fl_str_mv |
info:eu-repo/semantics/article |
dc.type.status.fl_str_mv |
info:eu-repo/semantics/publishedVersion |
format |
article |
status_str |
publishedVersion |
dc.identifier.uri.fl_str_mv |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200032 |
url |
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200032 |
dc.language.iso.fl_str_mv |
eng |
language |
eng |
dc.relation.none.fl_str_mv |
10.1590/S0103-97332002000200032 |
dc.rights.driver.fl_str_mv |
info:eu-repo/semantics/openAccess |
eu_rights_str_mv |
openAccess |
dc.format.none.fl_str_mv |
text/html |
dc.publisher.none.fl_str_mv |
Sociedade Brasileira de Física |
publisher.none.fl_str_mv |
Sociedade Brasileira de Física |
dc.source.none.fl_str_mv |
Brazilian Journal of Physics v.32 n.2a 2002 reponame:Brazilian Journal of Physics instname:Sociedade Brasileira de Física (SBF) instacron:SBF |
instname_str |
Sociedade Brasileira de Física (SBF) |
instacron_str |
SBF |
institution |
SBF |
reponame_str |
Brazilian Journal of Physics |
collection |
Brazilian Journal of Physics |
repository.name.fl_str_mv |
Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF) |
repository.mail.fl_str_mv |
sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br |
_version_ |
1754734859768561664 |