Carbon doping of InAlAs layers grown by metalorganic vapor phase epitaxy

Detalhes bibliográficos
Autor(a) principal: Ribeiro,M. L. P.
Data de Publicação: 2002
Outros Autores: Yavich,B., Tribuzy,C. V. B., Souza,P. L.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Brazilian Journal of Physics
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200032
Resumo: Carbon doped AlInAs layers grown by low pressure metalorganic vapor phase epitaxy are investigated as a function of growth temperature. Photoluminescence spectra show a significant drop in peak intensity as the growth temperature is reduced, due to the incorporation of non-radiative defects. It is shown that the C doping is not related to the deterioration of the optical properties of the layers. On the other hand, both the net hole concentration and the conductivity increase as the growth temperature is reduced due to a more efficient C incorporation and a lower incorporation of the passivating H atoms.
id SBF-2_11cc83c3c4630a7d7af45202c09b90de
oai_identifier_str oai:scielo:S0103-97332002000200032
network_acronym_str SBF-2
network_name_str Brazilian Journal of Physics
repository_id_str
spelling Carbon doping of InAlAs layers grown by metalorganic vapor phase epitaxyCarbon doped AlInAs layers grown by low pressure metalorganic vapor phase epitaxy are investigated as a function of growth temperature. Photoluminescence spectra show a significant drop in peak intensity as the growth temperature is reduced, due to the incorporation of non-radiative defects. It is shown that the C doping is not related to the deterioration of the optical properties of the layers. On the other hand, both the net hole concentration and the conductivity increase as the growth temperature is reduced due to a more efficient C incorporation and a lower incorporation of the passivating H atoms.Sociedade Brasileira de Física2002-06-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200032Brazilian Journal of Physics v.32 n.2a 2002reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97332002000200032info:eu-repo/semantics/openAccessRibeiro,M. L. P.Yavich,B.Tribuzy,C. V. B.Souza,P. L.eng2002-11-26T00:00:00Zoai:scielo:S0103-97332002000200032Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2002-11-26T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false
dc.title.none.fl_str_mv Carbon doping of InAlAs layers grown by metalorganic vapor phase epitaxy
title Carbon doping of InAlAs layers grown by metalorganic vapor phase epitaxy
spellingShingle Carbon doping of InAlAs layers grown by metalorganic vapor phase epitaxy
Ribeiro,M. L. P.
title_short Carbon doping of InAlAs layers grown by metalorganic vapor phase epitaxy
title_full Carbon doping of InAlAs layers grown by metalorganic vapor phase epitaxy
title_fullStr Carbon doping of InAlAs layers grown by metalorganic vapor phase epitaxy
title_full_unstemmed Carbon doping of InAlAs layers grown by metalorganic vapor phase epitaxy
title_sort Carbon doping of InAlAs layers grown by metalorganic vapor phase epitaxy
author Ribeiro,M. L. P.
author_facet Ribeiro,M. L. P.
Yavich,B.
Tribuzy,C. V. B.
Souza,P. L.
author_role author
author2 Yavich,B.
Tribuzy,C. V. B.
Souza,P. L.
author2_role author
author
author
dc.contributor.author.fl_str_mv Ribeiro,M. L. P.
Yavich,B.
Tribuzy,C. V. B.
Souza,P. L.
description Carbon doped AlInAs layers grown by low pressure metalorganic vapor phase epitaxy are investigated as a function of growth temperature. Photoluminescence spectra show a significant drop in peak intensity as the growth temperature is reduced, due to the incorporation of non-radiative defects. It is shown that the C doping is not related to the deterioration of the optical properties of the layers. On the other hand, both the net hole concentration and the conductivity increase as the growth temperature is reduced due to a more efficient C incorporation and a lower incorporation of the passivating H atoms.
publishDate 2002
dc.date.none.fl_str_mv 2002-06-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200032
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200032
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/S0103-97332002000200032
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv Sociedade Brasileira de Física
publisher.none.fl_str_mv Sociedade Brasileira de Física
dc.source.none.fl_str_mv Brazilian Journal of Physics v.32 n.2a 2002
reponame:Brazilian Journal of Physics
instname:Sociedade Brasileira de Física (SBF)
instacron:SBF
instname_str Sociedade Brasileira de Física (SBF)
instacron_str SBF
institution SBF
reponame_str Brazilian Journal of Physics
collection Brazilian Journal of Physics
repository.name.fl_str_mv Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)
repository.mail.fl_str_mv sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br
_version_ 1754734859768561664