Thickness dependence of the properties of indium tin oxide (ITO) FILMS prepared by activated reactive evaporation

Detalhes bibliográficos
Autor(a) principal: Benoy,M.D.
Data de Publicação: 2009
Outros Autores: Mohammed,E.M., Suresh Babu,M., Binu,P.J, Pradeep,B.
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Brazilian Journal of Physics
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332009000600003
Resumo: Tin doped indium oxide thin films were prepared on glass substrates kept at room temperature, by activated reactive evaporation (ARE). Structural, electrical and optical properties were studied for films having different thickness. The resulting films are polycrystalline and show ˜ 90 % transmission in the visible region. Hall effect measurements at room temperature for a film with a nominal thickness of ˜ 350 nm shows a relatively high carrier concentration ˜ 6.3 × 10(20) cm-3, mobility ˜ 16 cm² V-1s-1, with a low resistivity ˜ 1.01×10-3W cm.
id SBF-2_50114d29162adc754cdde59ced108f45
oai_identifier_str oai:scielo:S0103-97332009000600003
network_acronym_str SBF-2
network_name_str Brazilian Journal of Physics
repository_id_str
spelling Thickness dependence of the properties of indium tin oxide (ITO) FILMS prepared by activated reactive evaporationThin filmsITOARETin doped indium oxide thin films were prepared on glass substrates kept at room temperature, by activated reactive evaporation (ARE). Structural, electrical and optical properties were studied for films having different thickness. The resulting films are polycrystalline and show ˜ 90 % transmission in the visible region. Hall effect measurements at room temperature for a film with a nominal thickness of ˜ 350 nm shows a relatively high carrier concentration ˜ 6.3 × 10(20) cm-3, mobility ˜ 16 cm² V-1s-1, with a low resistivity ˜ 1.01×10-3W cm.Sociedade Brasileira de Física2009-12-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332009000600003Brazilian Journal of Physics v.39 n.4 2009reponame:Brazilian Journal of Physicsinstname:Sociedade Brasileira de Física (SBF)instacron:SBF10.1590/S0103-97332009000600003info:eu-repo/semantics/openAccessBenoy,M.D.Mohammed,E.M.Suresh Babu,M.Binu,P.JPradeep,B.eng2010-02-11T00:00:00Zoai:scielo:S0103-97332009000600003Revistahttp://www.sbfisica.org.br/v1/home/index.php/pt/ONGhttps://old.scielo.br/oai/scielo-oai.phpsbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br1678-44480103-9733opendoar:2010-02-11T00:00Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)false
dc.title.none.fl_str_mv Thickness dependence of the properties of indium tin oxide (ITO) FILMS prepared by activated reactive evaporation
title Thickness dependence of the properties of indium tin oxide (ITO) FILMS prepared by activated reactive evaporation
spellingShingle Thickness dependence of the properties of indium tin oxide (ITO) FILMS prepared by activated reactive evaporation
Benoy,M.D.
Thin films
ITO
ARE
title_short Thickness dependence of the properties of indium tin oxide (ITO) FILMS prepared by activated reactive evaporation
title_full Thickness dependence of the properties of indium tin oxide (ITO) FILMS prepared by activated reactive evaporation
title_fullStr Thickness dependence of the properties of indium tin oxide (ITO) FILMS prepared by activated reactive evaporation
title_full_unstemmed Thickness dependence of the properties of indium tin oxide (ITO) FILMS prepared by activated reactive evaporation
title_sort Thickness dependence of the properties of indium tin oxide (ITO) FILMS prepared by activated reactive evaporation
author Benoy,M.D.
author_facet Benoy,M.D.
Mohammed,E.M.
Suresh Babu,M.
Binu,P.J
Pradeep,B.
author_role author
author2 Mohammed,E.M.
Suresh Babu,M.
Binu,P.J
Pradeep,B.
author2_role author
author
author
author
dc.contributor.author.fl_str_mv Benoy,M.D.
Mohammed,E.M.
Suresh Babu,M.
Binu,P.J
Pradeep,B.
dc.subject.por.fl_str_mv Thin films
ITO
ARE
topic Thin films
ITO
ARE
description Tin doped indium oxide thin films were prepared on glass substrates kept at room temperature, by activated reactive evaporation (ARE). Structural, electrical and optical properties were studied for films having different thickness. The resulting films are polycrystalline and show ˜ 90 % transmission in the visible region. Hall effect measurements at room temperature for a film with a nominal thickness of ˜ 350 nm shows a relatively high carrier concentration ˜ 6.3 × 10(20) cm-3, mobility ˜ 16 cm² V-1s-1, with a low resistivity ˜ 1.01×10-3W cm.
publishDate 2009
dc.date.none.fl_str_mv 2009-12-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332009000600003
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332009000600003
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/S0103-97332009000600003
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv Sociedade Brasileira de Física
publisher.none.fl_str_mv Sociedade Brasileira de Física
dc.source.none.fl_str_mv Brazilian Journal of Physics v.39 n.4 2009
reponame:Brazilian Journal of Physics
instname:Sociedade Brasileira de Física (SBF)
instacron:SBF
instname_str Sociedade Brasileira de Física (SBF)
instacron_str SBF
institution SBF
reponame_str Brazilian Journal of Physics
collection Brazilian Journal of Physics
repository.name.fl_str_mv Brazilian Journal of Physics - Sociedade Brasileira de Física (SBF)
repository.mail.fl_str_mv sbfisica@sbfisica.org.br||sbfisica@sbfisica.org.br
_version_ 1754734865226399744

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