Study on Needles and Cracks of Tin-doped Indium Oxide Tablets for Electron Beam Evaporation Process

Detalhes bibliográficos
Autor(a) principal: Xu,Jiwen
Data de Publicação: 2015
Outros Autores: Yang,Zupei, Zhang,Xiaowen, Yang,Ling, Xu,Huarui, Wang,Hua
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Materials research (São Carlos. Online)
Texto Completo: http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392015000300519
Resumo: Tin-doped indium oxide (ITO) tablets were used to deposit ITO films on p-GaN layer of light-emitting diodes. Needles and cracks in ITO tablets generated during electron beam evaporation process were deeply investigated. The formation of needles is predominantly resulted from the scanning trace, which is controlled by x and y axes scanning singles. The needles can be eliminated by controlling electron beam scanning trace. The loose microstructure with uniform grains and pores in the ITO tablets results in weak bonding strength, which leads to cracks under the thermal shock of high energy electron beam. A three-dimensional reticulated skeleton structure with strong bonding strength can restrain these cracks.
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spelling Study on Needles and Cracks of Tin-doped Indium Oxide Tablets for Electron Beam Evaporation ProcessneedlecrackITOelectron beam evaporationTin-doped indium oxide (ITO) tablets were used to deposit ITO films on p-GaN layer of light-emitting diodes. Needles and cracks in ITO tablets generated during electron beam evaporation process were deeply investigated. The formation of needles is predominantly resulted from the scanning trace, which is controlled by x and y axes scanning singles. The needles can be eliminated by controlling electron beam scanning trace. The loose microstructure with uniform grains and pores in the ITO tablets results in weak bonding strength, which leads to cracks under the thermal shock of high energy electron beam. A three-dimensional reticulated skeleton structure with strong bonding strength can restrain these cracks.ABM, ABC, ABPol2015-06-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersiontext/htmlhttp://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392015000300519Materials Research v.18 n.3 2015reponame:Materials research (São Carlos. Online)instname:Universidade Federal de São Carlos (UFSCAR)instacron:ABM ABC ABPOL10.1590/1516-1439.310714info:eu-repo/semantics/openAccessXu,JiwenYang,ZupeiZhang,XiaowenYang,LingXu,HuaruiWang,Huaeng2015-08-04T00:00:00Zoai:scielo:S1516-14392015000300519Revistahttp://www.scielo.br/mrPUBhttps://old.scielo.br/oai/scielo-oai.phpdedz@power.ufscar.br1980-53731516-1439opendoar:2015-08-04T00:00Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR)false
dc.title.none.fl_str_mv Study on Needles and Cracks of Tin-doped Indium Oxide Tablets for Electron Beam Evaporation Process
title Study on Needles and Cracks of Tin-doped Indium Oxide Tablets for Electron Beam Evaporation Process
spellingShingle Study on Needles and Cracks of Tin-doped Indium Oxide Tablets for Electron Beam Evaporation Process
Xu,Jiwen
needle
crack
ITO
electron beam evaporation
title_short Study on Needles and Cracks of Tin-doped Indium Oxide Tablets for Electron Beam Evaporation Process
title_full Study on Needles and Cracks of Tin-doped Indium Oxide Tablets for Electron Beam Evaporation Process
title_fullStr Study on Needles and Cracks of Tin-doped Indium Oxide Tablets for Electron Beam Evaporation Process
title_full_unstemmed Study on Needles and Cracks of Tin-doped Indium Oxide Tablets for Electron Beam Evaporation Process
title_sort Study on Needles and Cracks of Tin-doped Indium Oxide Tablets for Electron Beam Evaporation Process
author Xu,Jiwen
author_facet Xu,Jiwen
Yang,Zupei
Zhang,Xiaowen
Yang,Ling
Xu,Huarui
Wang,Hua
author_role author
author2 Yang,Zupei
Zhang,Xiaowen
Yang,Ling
Xu,Huarui
Wang,Hua
author2_role author
author
author
author
author
dc.contributor.author.fl_str_mv Xu,Jiwen
Yang,Zupei
Zhang,Xiaowen
Yang,Ling
Xu,Huarui
Wang,Hua
dc.subject.por.fl_str_mv needle
crack
ITO
electron beam evaporation
topic needle
crack
ITO
electron beam evaporation
description Tin-doped indium oxide (ITO) tablets were used to deposit ITO films on p-GaN layer of light-emitting diodes. Needles and cracks in ITO tablets generated during electron beam evaporation process were deeply investigated. The formation of needles is predominantly resulted from the scanning trace, which is controlled by x and y axes scanning singles. The needles can be eliminated by controlling electron beam scanning trace. The loose microstructure with uniform grains and pores in the ITO tablets results in weak bonding strength, which leads to cracks under the thermal shock of high energy electron beam. A three-dimensional reticulated skeleton structure with strong bonding strength can restrain these cracks.
publishDate 2015
dc.date.none.fl_str_mv 2015-06-01
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392015000300519
url http://old.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392015000300519
dc.language.iso.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv 10.1590/1516-1439.310714
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv text/html
dc.publisher.none.fl_str_mv ABM, ABC, ABPol
publisher.none.fl_str_mv ABM, ABC, ABPol
dc.source.none.fl_str_mv Materials Research v.18 n.3 2015
reponame:Materials research (São Carlos. Online)
instname:Universidade Federal de São Carlos (UFSCAR)
instacron:ABM ABC ABPOL
instname_str Universidade Federal de São Carlos (UFSCAR)
instacron_str ABM ABC ABPOL
institution ABM ABC ABPOL
reponame_str Materials research (São Carlos. Online)
collection Materials research (São Carlos. Online)
repository.name.fl_str_mv Materials research (São Carlos. Online) - Universidade Federal de São Carlos (UFSCAR)
repository.mail.fl_str_mv dedz@power.ufscar.br
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