Electrical resistivity and metal-nonmetal transition in n-type doped 4H-SiC.

Detalhes bibliográficos
Autor(a) principal: Silva, Antonio Ferreira da
Data de Publicação: 2006
Outros Autores: Pernot, Julien, Contreras, Sylvie, Sernelius, Bo E., Persson, Clas, Camassel, Jean
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFBA
Texto Completo: http://repositorio.ufba.br/ri/handle/ri/13521
Resumo: p.1-5
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spelling Silva, Antonio Ferreira daPernot, JulienContreras, SylvieSernelius, Bo E.Persson, ClasCamassel, JeanSilva, Antonio Ferreira daPernot, JulienContreras, SylvieSernelius, Bo E.Persson, ClasCamassel, Jean2013-11-03T13:58:25Z2013-11-03T13:58:25Z20061098-0121http://repositorio.ufba.br/ri/handle/ri/13521v.74 n. 24p.1-5The electrical resistivity of 4H-SiC doped with nitrogen is analyzed in the temperature range 10–700 K for nitrogen concentrations between 3.5×1015 and 5×1019 cm−3. For the highest doped samples, a good agreement is found between the experimental resistivity and the values calculated from a generalized Drude approach at similar dopant concentration and temperature. From these results, the critical concentration (Nc) of nitrogen impurities which corresponds to the metal-nonmetal transition in 4H-SiC is deduced. We find Nc∼1019 cm−3.Submitted by Edileide Reis (leyde-landy@hotmail.com) on 2013-06-13T17:13:00Z No. of bitstreams: 1 e245201.pdf: 100974 bytes, checksum: b1bd271be8b9d61e355efcabf93d4a7b (MD5)Rejected by Alda Lima da Silva(sivalda@ufba.br), reason: Documento do Instituto de Física on 2013-08-16T18:57:01Z (GMT)Submitted by Edileide Reis (leyde-landy@hotmail.com) on 2013-08-27T11:07:21Z No. of bitstreams: 1 e245201.pdf: 100974 bytes, checksum: b1bd271be8b9d61e355efcabf93d4a7b (MD5)Approved for entry into archive by Rodrigo Meirelles (rodrigomei@ufba.br) on 2013-11-03T13:58:25Z (GMT) No. of bitstreams: 1 e245201.pdf: 100974 bytes, checksum: b1bd271be8b9d61e355efcabf93d4a7b (MD5)Made available in DSpace on 2013-11-03T13:58:25Z (GMT). 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dc.title.pt_BR.fl_str_mv Electrical resistivity and metal-nonmetal transition in n-type doped 4H-SiC.
title Electrical resistivity and metal-nonmetal transition in n-type doped 4H-SiC.
spellingShingle Electrical resistivity and metal-nonmetal transition in n-type doped 4H-SiC.
Silva, Antonio Ferreira da
title_short Electrical resistivity and metal-nonmetal transition in n-type doped 4H-SiC.
title_full Electrical resistivity and metal-nonmetal transition in n-type doped 4H-SiC.
title_fullStr Electrical resistivity and metal-nonmetal transition in n-type doped 4H-SiC.
title_full_unstemmed Electrical resistivity and metal-nonmetal transition in n-type doped 4H-SiC.
title_sort Electrical resistivity and metal-nonmetal transition in n-type doped 4H-SiC.
author Silva, Antonio Ferreira da
author_facet Silva, Antonio Ferreira da
Pernot, Julien
Contreras, Sylvie
Sernelius, Bo E.
Persson, Clas
Camassel, Jean
author_role author
author2 Pernot, Julien
Contreras, Sylvie
Sernelius, Bo E.
Persson, Clas
Camassel, Jean
author2_role author
author
author
author
author
dc.contributor.author.fl_str_mv Silva, Antonio Ferreira da
Pernot, Julien
Contreras, Sylvie
Sernelius, Bo E.
Persson, Clas
Camassel, Jean
Silva, Antonio Ferreira da
Pernot, Julien
Contreras, Sylvie
Sernelius, Bo E.
Persson, Clas
Camassel, Jean
description p.1-5
publishDate 2006
dc.date.issued.fl_str_mv 2006
dc.date.accessioned.fl_str_mv 2013-11-03T13:58:25Z
dc.date.available.fl_str_mv 2013-11-03T13:58:25Z
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
dc.type.driver.fl_str_mv info:eu-repo/semantics/article
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://repositorio.ufba.br/ri/handle/ri/13521
dc.identifier.issn.none.fl_str_mv 1098-0121
dc.identifier.number.pt_BR.fl_str_mv v.74 n. 24
identifier_str_mv 1098-0121
v.74 n. 24
url http://repositorio.ufba.br/ri/handle/ri/13521
dc.language.iso.fl_str_mv eng
language eng
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv Physical Review B
publisher.none.fl_str_mv Physical Review B
dc.source.pt_BR.fl_str_mv http://link-aps-org.ez10.periodicos.capes.gov.br/doi/10.1103/PhysRevB.74.245201
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