Oxygen transport and reaction mechanisms in rhenium gate contacts on hafnium oxide films on Si

Detalhes bibliográficos
Autor(a) principal: Pezzi, Rafael Peretti
Data de Publicação: 2006
Outros Autores: Copel, Matthew, Gordon, Michael, Cartier, Eduard, Baumvol, Israel Jacob Rabin
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/141420
Resumo: Oxygen transport and incorporation were investigated following postdeposition annealing of metal-oxide-semiconductor structures having ultrathin rhenium films as metal electrode and HfO2 films as dielectric on Si 001 . Isotopic tracing, nuclear reaction analysis, narrow resonant nuclear reaction profiling, and x-ray photoelectron spectroscopy were used to pursue this investigation. For annealing temperatures below 400 °C, oxygen from the gas phase incorporates mainly in near-surface regions of the overlying Re cap. Significant oxygen incorporation into the HfO2 films is observed only after annealing at 500 °C. The present results are discussed considering that supplying oxygen to the metal/dielectric interface can cause device threshold voltage shifts.
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spelling Pezzi, Rafael PerettiCopel, MatthewGordon, MichaelCartier, EduardBaumvol, Israel Jacob Rabin2016-05-20T02:10:32Z20060003-6951http://hdl.handle.net/10183/141420000555742Oxygen transport and incorporation were investigated following postdeposition annealing of metal-oxide-semiconductor structures having ultrathin rhenium films as metal electrode and HfO2 films as dielectric on Si 001 . Isotopic tracing, nuclear reaction analysis, narrow resonant nuclear reaction profiling, and x-ray photoelectron spectroscopy were used to pursue this investigation. For annealing temperatures below 400 °C, oxygen from the gas phase incorporates mainly in near-surface regions of the overlying Re cap. Significant oxygen incorporation into the HfO2 films is observed only after annealing at 500 °C. The present results are discussed considering that supplying oxygen to the metal/dielectric interface can cause device threshold voltage shifts.application/pdfengApplied physics letters. Vol. 88, no. 24 (June 2006), 243509, 3 p.FísicaOxygen transport and reaction mechanisms in rhenium gate contacts on hafnium oxide films on SiEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000555742.pdf000555742.pdfTexto completo (inglês)application/pdf602031http://www.lume.ufrgs.br/bitstream/10183/141420/1/000555742.pdf92e5596379377d09f55ce5c8ebabaddbMD51TEXT000555742.pdf.txt000555742.pdf.txtExtracted Texttext/plain19016http://www.lume.ufrgs.br/bitstream/10183/141420/2/000555742.pdf.txt03355eaa10bd55eda8741a1016f091aeMD52THUMBNAIL000555742.pdf.jpg000555742.pdf.jpgGenerated Thumbnailimage/jpeg2251http://www.lume.ufrgs.br/bitstream/10183/141420/3/000555742.pdf.jpgb458958a35aec635bb9fbe4c948b1fa3MD5310183/1414202021-06-13 04:32:18.150094oai:www.lume.ufrgs.br:10183/141420Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2021-06-13T07:32:18Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Oxygen transport and reaction mechanisms in rhenium gate contacts on hafnium oxide films on Si
title Oxygen transport and reaction mechanisms in rhenium gate contacts on hafnium oxide films on Si
spellingShingle Oxygen transport and reaction mechanisms in rhenium gate contacts on hafnium oxide films on Si
Pezzi, Rafael Peretti
Física
title_short Oxygen transport and reaction mechanisms in rhenium gate contacts on hafnium oxide films on Si
title_full Oxygen transport and reaction mechanisms in rhenium gate contacts on hafnium oxide films on Si
title_fullStr Oxygen transport and reaction mechanisms in rhenium gate contacts on hafnium oxide films on Si
title_full_unstemmed Oxygen transport and reaction mechanisms in rhenium gate contacts on hafnium oxide films on Si
title_sort Oxygen transport and reaction mechanisms in rhenium gate contacts on hafnium oxide films on Si
author Pezzi, Rafael Peretti
author_facet Pezzi, Rafael Peretti
Copel, Matthew
Gordon, Michael
Cartier, Eduard
Baumvol, Israel Jacob Rabin
author_role author
author2 Copel, Matthew
Gordon, Michael
Cartier, Eduard
Baumvol, Israel Jacob Rabin
author2_role author
author
author
author
dc.contributor.author.fl_str_mv Pezzi, Rafael Peretti
Copel, Matthew
Gordon, Michael
Cartier, Eduard
Baumvol, Israel Jacob Rabin
dc.subject.por.fl_str_mv Física
topic Física
description Oxygen transport and incorporation were investigated following postdeposition annealing of metal-oxide-semiconductor structures having ultrathin rhenium films as metal electrode and HfO2 films as dielectric on Si 001 . Isotopic tracing, nuclear reaction analysis, narrow resonant nuclear reaction profiling, and x-ray photoelectron spectroscopy were used to pursue this investigation. For annealing temperatures below 400 °C, oxygen from the gas phase incorporates mainly in near-surface regions of the overlying Re cap. Significant oxygen incorporation into the HfO2 films is observed only after annealing at 500 °C. The present results are discussed considering that supplying oxygen to the metal/dielectric interface can cause device threshold voltage shifts.
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dc.date.issued.fl_str_mv 2006
dc.date.accessioned.fl_str_mv 2016-05-20T02:10:32Z
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dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/141420
dc.identifier.issn.pt_BR.fl_str_mv 0003-6951
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dc.language.iso.fl_str_mv eng
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dc.relation.ispartof.pt_BR.fl_str_mv Applied physics letters. Vol. 88, no. 24 (June 2006), 243509, 3 p.
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