Room temperature interactions of water vapor with HfO/sub 2/ films on Si

Detalhes bibliográficos
Autor(a) principal: Driemeier, Carlos Eduardo
Data de Publicação: 2006
Outros Autores: Gusev, Evgeni P., Baumvol, Israel Jacob Rabin
Tipo de documento: Artigo
Idioma: eng
Título da fonte: Repositório Institucional da UFRGS
Texto Completo: http://hdl.handle.net/10183/141461
Resumo: HfO2 /SiO2/Si 001 thin film structures were exposed at room temperature to water vapor isotopically enriched in 2H and 18O followed by quantification and profiling of these nuclides by nuclear reaction analysis. We showed i the formation of strongly bonded hydroxyls at the HfO2 surface; ii room temperature migration of oxygen and water-derived oxygenous species through the HfO2 films, indicating that HfO2 is a weak diffusion barrier for these oxidizing species; iii hydrogenous, water-derived species attachment to the SiO2 interlayer, resulting in detrimental hydrogenous defects therein. Consequences of these results to HfO2-based metal-oxide-semiconductor devices are discussed.
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spelling Driemeier, Carlos EduardoGusev, Evgeni P.Baumvol, Israel Jacob Rabin2016-05-20T02:10:59Z20060003-6951http://hdl.handle.net/10183/141461000564735HfO2 /SiO2/Si 001 thin film structures were exposed at room temperature to water vapor isotopically enriched in 2H and 18O followed by quantification and profiling of these nuclides by nuclear reaction analysis. We showed i the formation of strongly bonded hydroxyls at the HfO2 surface; ii room temperature migration of oxygen and water-derived oxygenous species through the HfO2 films, indicating that HfO2 is a weak diffusion barrier for these oxidizing species; iii hydrogenous, water-derived species attachment to the SiO2 interlayer, resulting in detrimental hydrogenous defects therein. Consequences of these results to HfO2-based metal-oxide-semiconductor devices are discussed.application/pdfengApplied Physics Letters. New York. Vol. 88, no. 20 (May 2006), 201901, 3 p.FísicaRoom temperature interactions of water vapor with HfO/sub 2/ films on SiEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSORIGINAL000564735.pdf000564735.pdfTexto completo (inglês)application/pdf552961http://www.lume.ufrgs.br/bitstream/10183/141461/1/000564735.pdf61a4591e1177510a91bc12b349becd9bMD51TEXT000564735.pdf.txt000564735.pdf.txtExtracted Texttext/plain18096http://www.lume.ufrgs.br/bitstream/10183/141461/2/000564735.pdf.txt419a1f16daee37f36cf06498d66f8492MD52THUMBNAIL000564735.pdf.jpg000564735.pdf.jpgGenerated Thumbnailimage/jpeg2140http://www.lume.ufrgs.br/bitstream/10183/141461/3/000564735.pdf.jpgb5c13cfa18549a89decb4941adf90df0MD5310183/1414612021-06-13 04:30:49.089884oai:www.lume.ufrgs.br:10183/141461Repositório de PublicaçõesPUBhttps://lume.ufrgs.br/oai/requestopendoar:2021-06-13T07:30:49Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Room temperature interactions of water vapor with HfO/sub 2/ films on Si
title Room temperature interactions of water vapor with HfO/sub 2/ films on Si
spellingShingle Room temperature interactions of water vapor with HfO/sub 2/ films on Si
Driemeier, Carlos Eduardo
Física
title_short Room temperature interactions of water vapor with HfO/sub 2/ films on Si
title_full Room temperature interactions of water vapor with HfO/sub 2/ films on Si
title_fullStr Room temperature interactions of water vapor with HfO/sub 2/ films on Si
title_full_unstemmed Room temperature interactions of water vapor with HfO/sub 2/ films on Si
title_sort Room temperature interactions of water vapor with HfO/sub 2/ films on Si
author Driemeier, Carlos Eduardo
author_facet Driemeier, Carlos Eduardo
Gusev, Evgeni P.
Baumvol, Israel Jacob Rabin
author_role author
author2 Gusev, Evgeni P.
Baumvol, Israel Jacob Rabin
author2_role author
author
dc.contributor.author.fl_str_mv Driemeier, Carlos Eduardo
Gusev, Evgeni P.
Baumvol, Israel Jacob Rabin
dc.subject.por.fl_str_mv Física
topic Física
description HfO2 /SiO2/Si 001 thin film structures were exposed at room temperature to water vapor isotopically enriched in 2H and 18O followed by quantification and profiling of these nuclides by nuclear reaction analysis. We showed i the formation of strongly bonded hydroxyls at the HfO2 surface; ii room temperature migration of oxygen and water-derived oxygenous species through the HfO2 films, indicating that HfO2 is a weak diffusion barrier for these oxidizing species; iii hydrogenous, water-derived species attachment to the SiO2 interlayer, resulting in detrimental hydrogenous defects therein. Consequences of these results to HfO2-based metal-oxide-semiconductor devices are discussed.
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dc.date.issued.fl_str_mv 2006
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dc.identifier.issn.pt_BR.fl_str_mv 0003-6951
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dc.language.iso.fl_str_mv eng
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dc.relation.ispartof.pt_BR.fl_str_mv Applied Physics Letters. New York. Vol. 88, no. 20 (May 2006), 201901, 3 p.
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