Incorporation of oxygen and nitrogen in ultrathin films of SiO/sub 2 annealed in NO

• Autor(a) principal: Baumvol, Israel Jacob Rabin
• Data de Publicação: 1998
• Outros Autores: Ganem, Jean-Jacques, Gosset, Laurent G., Trimaille, Isabelle, Rigo, Serge
• Tipo de documento: Artigo
• Idioma: eng
• Título da fonte: Repositório Institucional da UFRGS
• Texto Completo: http://hdl.handle.net/10183/140713
• topic: Filmes finos

The areal densities of oxygen and nitrogen incorporated into ultrathin films of silicon dioxide during rapid thermal processing in nitric oxide, as well as the regions where these incorporations took place, were determined by combining nuclear reaction analysis and narrow nuclear resonance depth profiling with isotopic enrichment of the processing gas. Oxygen is seen to incorporate in the near-surface and near-interface regions of the oxynitride films, whereas nitrogen is incorporated only in the near-interface regions. The growth of the oxynitride film is very moderate as compared to that of a SiO2 film in dry O2 . The thermal oxynitridation of ultrathin SiO2 films takes place by two mechanisms in parallel: the major part of the NO molecules, which react with the silica, decompose in the near-surface region, the O atoms being exchanged for O atoms preexistent in this region of the SiO2 films; a minor portion of the NO molecules diffuse through the silica film in interstitial sites, without reacting with it, to react at the oxynitride/Si interface.